7$%
STB270N4F3
Automotive-grade N-channel 40 V, 1.6 m
Ω
typ., 160 A
STripFET™ F3 Power MOSFET in a D
2
PAK package
Datasheet
-
production data
Features
Type V
DS
STB270N4F3 40 V
R
DS(on) max
I
D
P
TOT
2.0 m Ω 160 A 330 W
•
Designed for automotive applications and
AEC-Q101 qualified
•
100% avalanche tested
•
Standard threshold drive
'3$.
Applications
• Switching application
Figure 1. Internal schematic diagram
'7$%
Description
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
*
6
$0Y
Order codes
STB270N4F3
Table 1. Device summary
Marking Package
270N4F3 D²PAK
Packaging
Tape and reel
February 2015
This is information on a product in full production.
DocID13208 Rev 5 1/15 www.st.com
3
4
5
6
1
2
Contents
Contents
STB270N4F3
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1
D
2
PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 DocID13208 Rev 5
STB270N4F3 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(2)
P
TOT dv/dt
(3)
E
AS
(4)
T
J
T stg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
C
C
= 25 °C
=100 °C
1.
Current limited by package
2.
Pulse width limited by safe operating area
3.
I
SD
≤
120 A, di/dt
≤
200 A/µs, V
DD
≤
V
(BR)DSS
, T j
≤
T
JMAX
4.
Starting T j
=25 °C, I
D
=80 A, V
DD
= 32 V
Value
-55 to 175
40
± 20
160
160
640
330
3.5
1
Symbol
Table 3. Thermal data
Parameter
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case max
Thermal resistance junction-pcb max
1.
When mounted on 1inch² FR-4 board, 2 oz Cu.
Value
0.45
35
Unit
°C/W
°C/W
Unit
A
A
A
V
V
W
V/ns
J
°C
DocID13208 Rev 5 3/15
15
Electrical characteristics STB270N4F3
(T
CASE
=25 °C unless otherwise specified)
Symbol
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Parameter
Table 4. On/off states
Test conditions
Drain-source breakdown voltage
I
D
= 250 μ A, V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
V
DS
= 40 V
V
DS
= 40 V, T j
= 125 °C
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on resistance
V
GS
= 10 V, I
D
= 80 A
Min.
Typ.
Max.
Unit
40
2
1.6
10
100
± 200 nA
4
2.0
V m Ω
V
µA
µA
Symbol Parameter
Table 5. Dynamic
Test conditions g fs
(1)
Forward transconductance
V
DS
=15 V, I
D
= 80 A
C iss
C
C oss rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25 V, f=1 MHz, V
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
=20 V, I
=10 V
D
= 160 A
(see Figure 14)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
GS
=0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
=20 V, I
D
= 80 A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 16)
Min.
Typ.
Max.
Unit
-
-
-
-
200
-
7400
1800
47
S
110 150 nC
27 nC
25 nC pf pF pF
Min.
Typ.
Max. Unit
-
-
-
-
22
180
110
45 -
-
-
ns ns ns ns
4/15 DocID13208 Rev 5
STB270N4F3 Electrical characteristics
Symbol Parameter
Table 7. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
I
SD
=80 A, V
GS
=0
I
SD
=160 A, di/dt = 100 A/µs,
V
DD
=32 V, Tj=150 °C
(see Figure 15)
Min
-
-
-
-
-
-
Typ.
Max Unit
160
640
1.5
70
225
A
A
V ns nC
3.2
A
DocID13208 Rev 5 5/15
15
Electrical characteristics STB270N4F3
2.1 Electrical characteristics (curves)
Figure 3. Thermal impedance
,
'
$
Figure 2. Safe operating area
*,3')65
'6RQ
.
į
72(+
2SHUDWLRQLQWKLVDUHDLV
/LPLWHGE\PD[5
7M&
7F &
6LQJOHSXOVH
9
'6
9
Figure 4. Output characteristics
V
PV
PV
6LQJOHSXOVH
W
S
V
Figure 5. Transfer characteristics
Figure 6. Static drain-source on-resistance
HV29690
R
DS(on)
(m Ω )
2.10
2.00
1.90
1.80
1.70
1.60
1.50
1.40
1.30
0
V
GS
=10V
20 40 60 80 100 120 140 I
D
(A)
Figure 7. Normalized B
VDSS
vs temperature
6/15 DocID13208 Rev 5
STB270N4F3
Figure 8. Gate charge vs gate-source voltage
Electrical characteristics
Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
AM04229v1
V
SD
(V)
0.95
0.90
0.85
0.80
T
J
=-50°C
T
J
=25°C
0.75
0.70
0.65
0.60
0.55
0.50
0.45
T
J
=175°C
0.40
0 20 40 60 80 100 120 140 160 180 I SD (A)
DocID13208 Rev 5 7/15
15
Test circuit
3 Test circuit
STB270N4F3
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 16. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
AM01470v1
Figure 17. Unclamped inductive waveform
V
D
V
(BR)DSS
V
D
I
D
L
2200
μ F
3.3
μ F
V
DD
D.U.T.
P w
AM01471v1
Figure 18. Switching time waveform t on td on t r t off td off t f
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
8/15 DocID13208 Rev 5
STB270N4F3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1 D
2
PAK package information
Figure 19. D²PAK (TO-263) outline
DocID13208 Rev 5
B9
9/15
15
Package information
Dim.
L
L1
L2
R
V2
E1
E2 e e1
H
J1 c c2
D
D1
D2
E
A
A1 b b2
STB270N4F3
4.88
15
2.49
2.29
1.27
1.30
Table 8. D²PAK (TO-263) mechanical data mm
Typ.
Min.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10
8.50
6.85
7.75
1.30
8.70
7.05
2.54
0.4
0°
5.28
15.85
2.69
2.79
1.40
1.75
8°
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
10/15 DocID13208 Rev 5
STB270N4F3
Figure 20. D²PAK footprint
(a)
Package information
)RRWSULQW a.
All dimension are in millimeters
DocID13208 Rev 5 11/15
15
Packing information
Figure 21. Tape
SLWFKHVFXPXODWLYH
WROHUDQFHRQWDSHPP
3 ' 3
7
7RSFRYHU
WDSH
%
.
)RUPDFKLQHUHIRQO\
LQFOXGLQJGUDIWDQG
UDGLLFRQFHQWULFDURXQG%
%
$ 3
8VHUGLUHFWLRQRIIHHG
'
STB270N4F3
)
(
:
8VHUGLUHFWLRQRIIHHG
5
%HQGLQJUDGLXV
$0Y
12/15 DocID13208 Rev 5
STB270N4F3
5((/',0(16,216
Figure 22. Reel
Packing information
PPPLQ
$FFHVVKROH
$WVORWORFDWLRQ
7
%
'
&
$
1
Dim.
P0
P1
P2
R
T
W
D1
E
F
K0
A0
B0
D
)XOOUDGLXV
7DSHVORW
LQFRUHIRU
WDSHVWDUWPP
PLQZLGWK
*PHDVXUHG
DWKXE
$0Y
Min.
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
4.8
Table 9. D²PAK (TO-263) tape and reel mechanical data
Tape Reel mm mm
Dim.
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
Max.
330
13.2
26.4
30.4
1000
1000
DocID13208 Rev 5 13/15
15
Revision history STB270N4F3
Date
07-Feb-2007
02-Apr-2008
06-May-2009
14-Jul-2009
26-Feb-2015
Revision
1
2
3
4
5
Table 10. Revision history
Changes
Initial release.
Some value changes on Table 2
Changed : Description
and Figure 12: Source-drain diode forward characteristics
Removed package and mechanical data: TO-220
The part number STI270N4F3 has been moved to a separate document.
Updated title, features and description cover page.
Updated Table 2: Absolute maximum ratings
,
Table 3: Thermal data
.
Updated Section 4: Package information and
Section 5:
Packing information .
Minor text changes.
14/15 DocID13208 Rev 5
STB270N4F3
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
DocID13208 Rev 5 15/15
15
