STMicroelectronics STF28N65M2 Datasheet

STB28N65M2, STF28N65M2,
STP28N65M2, STW28N65M2
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet - preliminary data
Features
TAB
Order codes
VDS
RDS(on) max
ID
650 V
0.18 Ω
20 A
STB28N65M2
3
1
1
D2PAK
2
3
STF28N65M2
STP28N65M2
TO-220FP
STW28N65M2
TAB
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
3
1
2
2
TO-220
• 100% avalanche tested
3
1
• Zener-protected
TO-247
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
AM15572v1
Table 1. Device summary
Order codes
Marking
STB28N65M2
STF28N65M2
Package
Packaging
D2PAK
Tape and reel
TO-220FP
28N65M2
STP28N65M2
TO-220
STW28N65M2
TO-247
December 2014
DocID027256 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Tube
1/22
www.st.com
Contents
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
.............................................. 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
D²PAK, STB28N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2
TO-220FP, STF28N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
TO-220, STP28N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.4
TO-247, STW28N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
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STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
D2PAK,
TO-220, TO-247
VGS
ID
± 25
Drain current (continuous) at TC = 25 °C
ID
IDM
Gate-source voltage
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
dv/dt
Tstg
Tj
A
(1)
13
A
13
80
Total dissipation at TC = 25 °C
(4)
(1)
20
Drain current (pulsed)
PTOT
dv/dt (3)
V
20
Drain current (continuous) at TC = 100 °C
(2)
TO-220FP
A
170
Peak diode recovery voltage slope
15
MOSFET dv/dt ruggedness
50
30
W
2500
V
V/ns
Storage temperature
- 55 to 150
°C
Max. operating junction temperature
150
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. ISD ≤ 20 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=520 V
4. VDS ≤ 520 V
Table 3. Thermal data
Value
Symbol
Parameter
Rthj-case
Thermal resistance
junction-case max
0.74
Rthj-pcb(1)
Thermal resistance
junction-pcb max
30
Rthj-amb
Unit
D2PAK TO-220FP
Thermal resistance
junction-ambient max
TO-220
4.17
TO-247
0.74
°C/W
°C/W
62.5
50
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
2.4
A
EAS
Single pulse avalanche energy (starting
Tj = 25°C, ID = IAR; VDD = 50 V)
760
mJ
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Electrical characteristics
2
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
Test conditions
VGS = 0, ID = 1 mA
Min.
Typ.
Max.
650
Unit
V
VGS = 0, VDS = 650 V
1
µA
VGS = 0, VDS = 650 V
TC = 125 °C
100
µA
VDS = 0, VGS = ± 25 V
±10
µA
3
4
V
0.15
0.18
Ω
Min.
Typ.
Max.
Unit
-
1440
-
pF
-
60
-
pF
-
2
-
pF
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
2
VGS = 10 V, ID = 10 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq(1)
Equivalent output
capacitance
VGS = 0, VDS = 0 to 520 V
-
307
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
4.9
-
Ω
Qg
Total gate charge
-
35
-
nC
Qgs
Gate-source charge
-
6
-
nC
Qgd
Gate-drain charge
VDD = 520 V, ID = 20 A,
VGS = 10 V
(see Figure 19)
-
15
-
nC
VDS = 100 V, f = 1 MHz,
VGS = 0
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/22
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 325 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18 and Figure 23)
Fall time
DocID027256 Rev 1
Min.
Typ.
Max.
Unit
-
13.4
-
ns
-
10
-
ns
-
59
-
ns
-
8.8
-
ns
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
20
A
ISDM
(1)
Source-drain current (pulsed)
-
80
A
VSD
(2)
Forward on voltage
-
1.6
V
ISD
trr
VGS = 0, ISD = 20 A
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 20)
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
-
384
ns
-
5.7
µC
-
30
A
-
544
ns
-
8.2
µC
-
30.5
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
2.1
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Electrical characteristics (curves)
Figure 2. Safe operating area for D2PAK and
TO-220
Figure 3. Thermal impedance for D2PAK and
TO-220
*,3*07
RQ
2S
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LWH WLRQ
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P LV
D[ DU
5 HD
LV
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,'
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—V
—V
PV
PV
7M ƒ&
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6LQJOHSXOVH
9'6 9
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
*,3*07
RQ
—V
/L
2
'
6
—V
P
SH
UD
LWH WLR
G QL
E\ Q
P WKL
D[ VD
5 UH
D
LV
,'
$
PV
PV
7M ƒ&
7F ƒ&
6LQJOHSXOVH
9'6 9
Figure 6. Safe operating area for TO-247
LV
RQ
—V
'6
2S
/LP HUDW
LWH LRQ
GE LQ
\P WKLV
D[ DUH
5
D
Figure 7. Thermal impedance for TO-247
*,3*07
,'
$
—V
PV
PV
7M ƒ&
7F ƒ&
6LQJOHSXOVH
6/22
9'6 9
DocID027256 Rev 1
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Figure 8. Output characteristics
*,3*07
,' $
Electrical characteristics
Figure 9. Transfer characteristics
*,3*07
,'
$
9'6 9
9*6 9
9
9
9
9'6 9
Figure 10. Normalized gate threshold voltage
vs. temperature
GIPD180920141442FSR
VGS(th)
(norm)
ID = 250 µA
1.1
1.08
0.9
1.00
0.8
0.96
0.7
0.92
25
75
125
Tj(°C)
Figure 12. Static drain-source on-resistance
*,3*07
5'6 RQ
ȍ
9*6 9
0.88
-75
9*6 9
GIPD180920141448FSR
ID= 1mA
-25
25
75
125
Tj(°C)
Figure 13. Normalized on-resistance vs.
temperature
GIPD180920141459FSR
RDS(on)
(norm)
2.2
V(BR)DSS
(norm)
1.04
-25
Figure 11. Normalized V(BR)DSS vs. temperature
1.0
0.6
-75
VGS= 10V
1.8
1.4
1
0.6
,' $
0.2
-75
DocID027256 Rev 1
-25
25
75
125
Tj(°C)
7/22
22
Electrical characteristics
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Figure 14. Gate charge vs gate-source voltage
*,3*07
9'6
9*6
9
9'6
9
9'' 9
,' $
Figure 15. Capacitance variations
*,3*07
&
S)
&LVV
&RVV
4J Q&
Figure 16. Output capacitance stored energy
&UVV
9'6 9
Figure 17. Source-drain diode forward
characteristics
*,3*07
96' 9
*,3*07
(RVV
—-
8/22
7- ƒ&
7- ƒ&
9'6 9
DocID027256 Rev 1
7- ƒ&
,6' $
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VDD
IG=CONST
VD
VGS
100Ω
Vi=20V=VGMAX
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 20. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 21. Unclamped inductive load test circuit
L
A
D
G
FAST
DIODE
D.U.T.
S
3.3
μF
B
B
B
VD
L=100μH
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
ton
9 %5 '66
tdon
9'
toff
tr
tdoff
tf
90%
90%
,'0
10%
,'
9''
10%
0
9''
VDS
90%
VGS
$0Y
0
DocID027256 Rev 1
10%
AM01473v1
9/22
22
Package mechanical data
4
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
D²PAK, STB28N65M2
Figure 24. D2PAK drawing
B9
10/22
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STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Package mechanical data
Table 9. D²PAK mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
8°
DocID027256 Rev 1
11/22
22
Package mechanical data
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Figure 25. D2PAK footprint (a)
)RRWSULQW
a. All dimensions are in millimeters
12/22
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STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
4.2
Package mechanical data
TO-220FP, STF28N65M2
Figure 26. TO-220FP drawing
7012510_Rev_K_B
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22
Package mechanical data
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Table 10. TO-220FP mechanical data
mm
Dim.
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
14/22
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Ø
3
3.2
DocID027256 Rev 1
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
4.3
Package mechanical data
TO-220, STP28N65M2
Figure 27. TO-220 type A drawing
BW\SH$B5HYB7
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Package mechanical data
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
16/22
Typ.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID027256 Rev 1
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
4.4
Package mechanical data
TO-247, STW28N65M2
Figure 28. TO-247 drawing
0075325_H
DocID027256 Rev 1
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Package mechanical data
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Table 12. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
18/22
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID027256 Rev 1
5.70
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
5
Packing mechanical data
Packing mechanical data
Figure 29. Tape for D2PAK
SLWFKHVFXPXODWLYH
WROHUDQFHRQWDSHPP
7
3
7RSFRYHU
WDSH
3
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)
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.
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$
3
'
8VHUGLUHFWLRQRIIHHG
5
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8VHUGLUHFWLRQRIIHHG
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DocID027256 Rev 1
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22
Packing mechanical data
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
Figure 30. Reel for D2PAK
7
5((
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Table 13. D²PAK tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
20/22
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID027256 Rev 1
Min.
Max.
330
13.2
26.4
30.4
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
6
Revision history
Revision history
Table 14. Document revision history
Date
Revision
09-Dec-2014
1
Changes
First release.
DocID027256 Rev 1
21/22
22
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
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