STMicroelectronics STD35NF06L Datasheet

STD35NF06L
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET
in a DPAK package
Datasheet — production data
Features
Order code
VDSS
RDS(on)
ID
STD35NF06LT4
60V
<0.017Ω
35A
■
Low threshold drive
■
Gate charge minimized
TAB
3
1
Applications
■
DPAK
Switching application
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Figure 1.
Internal schematic diagram
$4!"OR
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3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STD35NF06LT4
D35NF06L
DPAK
Tape and reel
April 2012
This is information on a product in full production.
Doc ID 7662 Rev 5
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www.st.com
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Contents
STD35NF06L
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STD35NF06L
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source voltage
60
V
Drain-gate voltage (RGS = 20 kΩ)
60
V
± 16
V
Gate- source voltage
ID
Drain current (continuous) at TC = 25 °C
35
A
ID
Drain current (continuous) at TC = 100 °C
24.5
A
Drain current (pulsed)
140
A
Total dissipation at TC = 25 °C
80
W
0.53
W/°C
5
V/ns
280
mJ
-55 to 175
°C
Value
Unit
IDM(1)
Ptot
Derating Factor
dv/dt(2)
Peak diode recovery avalanche energy
EAS (3)
Single pulse avalanche energy
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤ 35 A, di/dt ≤ 100 A/µs, VDD =V(BR)DSS, Tj ≤ TJMAX
3. Starting Tj = 25 °C, ID = 30 A, VDD =30 V
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
1.88
°C/W
Rthj-amb
Thermal resistance junction-to ambient max
100
°C/W
Maximum lead temperature for soldering
purpose
275
°C
TJ
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Electrical characteristics
2
STD35NF06L
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 250 µA, VGS =0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 60 V
VDS = 60 V, TC = 125 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 16 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 17.5 A
VGS = 4.5 V, ID = 17.5 A
Table 5.
Symbol
Typ.
Max.
60
Unit
V
1
10
µA
µA
±100
nA
2.5
V
0.014
0.016
0.017
0.020
Ω
Ω
Max.
Unit
1
Dynamic
Parameter
Test conditions
Min.
Typ.
gfs (1)
Forward
transconductance
VDS = 15 V, ID = 17.5 A
-
28
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
1700
305
105
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30 V, ID = 27.5 A
RG = 4.7 Ω VGS = 4.5 V
(see Figure 13)
-
20
100
40
20
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 48 V, ID = 55 A,
VGS = 4.5 V, RG = 4.7 Ω
(see Figure 14)
-
25
5
10
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
4/14
Min.
Doc ID 7662 Rev 5
33
nC
nC
nC
STD35NF06L
Electrical characteristics
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD = 35 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A,
di/dt = 100 A/µs,
VDD = 30 V, Tj = 150 °C
(see Figure 15)
ISD
trr
Qrr
IRRM
Min.
Max.
Unit
-
35
140
A
A
-
1.5
V
-
Typ.
80
200
5
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
STD35NF06L
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on-resistance
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STD35NF06L
Figure 8.
Electrical characteristics
Gate charge vs. gate-source voltage Figure 9.
Figure 10. Normalized gate threshold voltage
vs. temperature
Capacitance variations
Figure 11. Normalized on-resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
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Test circuit
3
STD35NF06L
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped Inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/14
0
Doc ID 7662 Rev 5
10%
AM01473v1
STD35NF06L
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 7.
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
1.50
L1
2.80
L2
0.80
L4
0.60
1
R
V2
0.20
0°
8°
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Package mechanical data
STD35NF06L
Figure 19. DPAK (TO-252) drawing
0068772_H
Figure 20. DPAK footprint(a)
6.7
1.8
3
1.6
2.3
6.7
2.3
1.6
a. All dimension are in millimeters
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Doc ID 7662 Rev 5
AM08850v1
STD35NF06L
5
Packing mechanical data
Packing mechanical data
Table 8.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
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18.4
22.4
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Packing mechanical data
STD35NF06L
Figure 21. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
W
K0
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 22. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
12/14
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STD35NF06L
6
Revision history
Revision history
Table 9.
Revision history
Date
Revision
Changes
21-Jun-2004
2
Preliminary version
06-Jul-2006
3
New template, no content change
20-Feb-2007
4
Typo mistake on page 1
19-Apr-2012
5
Added new value in Table 4: On/off states (VGS(th) max).
Minor text changes.
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STD35NF06L
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