STW30NM60D
N-channel 600V - 0.125
Ω
- 30A - TO-247
Fast diode MDmesh™ Power MOSFET
General features
Type
STW30NM60D
V
DSS
600V
R
DS(on)
< 0.145
Ω
■
■
■
■
■
High dv/dt and avalanche capabilities
100% avalanche rated
Low input capacitance and gate charge
Low gate input resistance
Fast internal recovery diode
I
D
30A
Description
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Applications
■ Switching application
TO-247
Internal schematic diagram
Order codes
Part number Marking Package Packaging Obsolete Product(s) - Obsolete Product(s)
STW30NM60D W30NM60D TO-247 Tube
July 2006 Rev 5 1/12 www.st.com
12
3
4
5
1
2
Contents
Contents
STW30NM60D
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STW30NM60D Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
I
V
DS
V
DGR
V
GS
I
D
P
I
D
DM
(1)
TOT
Drain-source voltage (V
GS
Drain-gate voltage (R
GS
Gate- source voltage
= 0)
= 20k Ω )
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor dv/dt
(2)
Peak diode recovery voltage slope
T j
T stg
Operating junction temperature
Storage temperature
1.
Pulse width limited by safe operating area
2.
I
SD
< 30A, di/dt < 400A/µs, V
DD
= 80%V
(BR)DSS
Table 2.
Symbol
Thermal resistance
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
T l
Maximum lead temperature for soldering purpose
Value
600
600
± 30
30
18.9
120
312
2.5
20
-55 to 150
Value
0.4
62.5
300
Unit
°C/W
°C/W
°C
Table 3.
Symbol
Avalanche characteristics
Parameter
I
AR
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T j
max)
Single pulse avalanche energy
(starting T j
= 25°C, I
D
= I
AR
, V
DD
= 50V)
Value
15
740
Unit
A mJ
Obsolete Product(s) - Obsolete Product(s)
Unit
A
W
A
A
V
V
V
W/°C
V/ns
°C
3/12
Electrical characteristics STW30NM60D
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
I
I
DSS
GSS
GS(th)
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
R
DS(on
Static drain-source on resistance
Test conditions Min.
Typ.
Max.
Unit
I
D
= 1mA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating, @125°C
600
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 15A
3
10
100
± 10
V
µA
µA
µA
4 5 V
0.125 0.145
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions Min Typ.
Max.
Unit g fs
(1)
C iss
C oss
C rss
C oss eq.
(2)
Q g
Q gs
Q gd
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
V
DS
DS
GS
= 15V , I
= 25V, f = 1MHz,
= 0
D
= 15A
Equivalent output capacitance V
GS
= 0V, V
DS
= 0 to 480V
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480V, I
D
= 30A,
V
GS
= 10V
Figure 15
16
2520
800
75
390
82
24
42
115
1.
Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
2.
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss increases from 0 to 80% V
DSS
when V
DS
S pF pF pF pF nC nC nC
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STW30NM60D Electrical characteristics
Table 6.
Symbol t d(on) t r t d(off) t f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V
DD
= 300V, I
D
= 15A,
R
G
= 4.7
Ω, V
GS
= 10V
Figure 14
Min.
Typ.
Max.
Unit
32
33
75
35 ns ns ns ns
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
I
SD
= 30A, V
GS
= 0
I
SD
= 30A, di/dt=100A/µs
V
DD
= 50V,Tj=25°C
Figure 17
Min.
Typ.
Max.
Unit
165
1.1
14
30
120
1.5
A
A
V ns nC
A
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Electrical characteristics
Figure 1.
Safe operating area Figure 2.
Thermal impedance
STW30NM60D
Figure 3.
Output characterisics Figure 4.
Transfer characteristics
Figure 5.
Transconductance Figure 6.
Static drain-source on resistance
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STW30NM60D Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
3 Test circuit
Figure 12. Unclamped inductive load test circuit
STW30NM60D
Figure 13. Unclamped inductive wafeform
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Figure 16.
Test circuit for inductive load switching and diode recovery times
Figure 17. Switching time waveform
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STW30NM60D
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data STW30NM60D
DIM.
L2
øP
øR
E e
L
L1
S b2 c
D
A
A1 b b1
MIN.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
TO-247 MECHANICAL DATA mm.
TYP
5.45
18.50
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14.80
4.30
3.65
5.50
MIN.
0.19
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.14
0.140
0.177
5.50
inch
TYP.
0.214
0.728
0.216
MAX.
0.20
0.102
0.055
0.094
0.134
0.03
0.793
0.620
0.582
0.17
0.143
0.216
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STW30NM60D Revision history
Table 8.
Date
24-June-2004
06-Dec-2005
20-Dec-2005
24-Jan-2006
13-Jul-2006
Revision history
Revision
1
4
5
2
3
Changes
The document change from “ADVANCED” to “COMPLETE”.
New stylesheet.
Rds(on) Max@10V changed. See
Table 4 .
Inserted ecopack indication
Modified value on
Source drain diode
Changed unit on
Dynamic
New template, modified unit on Source drain diode
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STW30NM60D
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