STP5NK80Z
STP5NK80ZFP
N-channel 800V - 1.9
Ω
- 4.3A - TO-220/TO-220FP
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STP5NK80Z
STP5NK80ZFP
V
DSS
(@Tjmax)
800 V
800 V
R
DS(on)
< 2.4 Ω
< 2.4 Ω
■
■
■
■
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
I
D
4.3 A
4.3 A
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
TO-220
1
2
3
TO-220FP
Internal schematic diagram
Order codes
Part number
STP5NK80Z
STP5NK80ZFP
Marking
P5NK80Z
P5NK80ZFP
Package
TO-220
TO-220FP
Packaging
Tube
Tube
August 2006 Rev 4 1/15 www.st.com
15
3
4
5
1
2
Contents
Contents
STP5NK80Z - STP5NK80ZFP
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/15
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
Drain-source voltage (V
Gate-source voltage
GS
= 0)
Drain current (continuous) at T
C
= 25°C
I
D
I
DM
(2)
P
TOT
Drain current (continuous) at T
Drain current (pulsed)
C
=100°C
Total dissipation at T
C
= 25°C
Derating factor
V
ESD(G-S)
Gate source ESD
(HBM-C=100pF, R=1.5
ΚΩ ) dv/dt
(3)
Peak diode recovery voltage slope
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t=1s; T c
= 25°C)
T
J
T stg
Operating junction temperature
Storage temperature
1.
Limited only by maximum temperature allowed
2.
Pulse width limited by safe operating area
3.
I
SD
≤
4.3A, di/dt
≤
DD
V
(BR)DSS
, T j
≤
T
JMAX.
Table 2.
Symbol
Thermal data
Parameter
4.3
2.7
17.2
110
0.88
TO-220
Value
TO-220FP
800
± 30
4.3
(1)
2.7
(1)
17.2
(1)
30
0.24
3500
4.5
2500
Unit
V
V
A
A
A
W
W/°C
V
V/ns
V
-55 to 150 °C
R thj-case
R thj-a
T l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
TO-220
1.14
Value
62.5
300
TO-220FP
4.2
Unit
°C/W
°C/W
°C
3/15
Electrical ratings
1.1
STP5NK80Z - STP5NK80ZFP
Table 3.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
4.3
190
Unit
A mJ
Table 4.
Symbol
BV
GSO
Gate-source zener diode
Parameter Test conditions Min.
Typ.
Max.
Unit
Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
4/15
STP5NK80Z - STP5NK80ZFP Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
I
D
= 1mA, V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,
Tc = 125°C
Gate body leakage current
(V
GS
= 0)
V
GS
= ± 20V
Gate threshold voltage V
DS
= V
GS
, I
D
= 100µA
Static drain-source on resistance
V
GS
= 10V, I
D
= 2.15 A
Min.
Typ.
Max.
Unit
800 V
1
50
µA
µA
3 3.75
1.9
± 10
4.5
2.4
µA
V
Ω
Table 6.
Symbol g fs
(1)
Dynamic
Parameter Test conditions
C osseq
(2)
.
t t
C
C
C iss oss rss d(on) t r t d(off) t r
Q g
Q gs
Q gd d(Voff) t r
Forward transconductance V
DS
=15V, I
D
= 2.15A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
Equivalent output capacitance
Turn-on delay time
Rise time
Turn-on delay time fall time
Total gate charge
Gate-source charge
Gate-drain charge
Off-voltage rise time
Fall time
Cross-over time
V
(see
V
V
GS
V
DD
R
G
= 2 A,
=4.7
Ω, V
GS
DD
GS
V
DD
R
G
=0, V
=400 V, I
D
Figure 18
=640V, I
=10V
DS
=0V to 400V
D
=640 V, I
D
= 4.3A
=4.7
Ω, V
GS
(see
Figure 20
)
=10V
= 4.3 A,
)
=10V
Min.
Typ.
Max.
Unit
4.25
910
98
20
40
32.4
5
18.5
22
10
32
18
25
45
30
45.5
pF pF pF pF
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
2.
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss increases from 0 to 80% V
DSS
when V
DS
S nC nC nC ns ns ns ns ns ns ns
5/15
Electrical characteristics STP5NK80Z - STP5NK80ZFP
Table 7.
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Test conditions
I
SD
= 4.3 A, V
GS
=0
I
SD
= 4.3 A, di/dt = 100A/µs,
V
DD
=40 V, Tj = 150°C
(see
Figure 20 )
Min Typ.
Max Unit
4.3
17.2
1.6
A
A
V
500
3
12 ns
µC
A
6/15
STP5NK80Z - STP5NK80ZFP Electrical characteristics
Figure 1.
Safe operating area for TO-220 Figure 2.
Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-220FP
(HV11720)
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characterisics Figure 6.
Transfer characteristics
7/15
Electrical characteristics
Figure 7.
Transconductance
STP5NK80Z - STP5NK80ZFP
Figure 8.
Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
8/15
STP5NK80Z - STP5NK80ZFP
Figure 13. Source-drain diode forward characteristics
Electrical characteristics
Figure 14. Normalized BVdss vs temperature
Figure 15. Avalanche energy vs temperature
9/15
Test circuit STP5NK80Z - STP5NK80ZFP
Figure 16. Unclamped Inductive load test circuit
Figure 17. Unclamped Inductive waveform
Figure 18. Switching times test circuit for resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load switching and diode recovery times
10/15
STP5NK80Z - STP5NK80ZFP
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/15
Package mechanical data STP5NK80Z - STP5NK80ZFP
DIM.
G1
H
L2
L3
L4
L5
L6
L7
Ø
F
F1
F2
G
D
E
A
B
MIN.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
TO-220FP MECHANICAL DATA mm.
TYP
16
MAX.
4.6
2.7
2.75
0.7
1
1.7
1.7
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
L6
L7
L3
L2
L5
L4
1 2 3
12/15
STP5NK80Z - STP5NK80ZFP Package mechanical data
DIM.
H1
J1
L
L1
L20
L30
øP
Q
E e c
D e1
F
A b b1
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA mm.
TYP MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
16.40
28.90
3.85
2.95
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
13/15
Revision history STP5NK80Z - STP5NK80ZFP
Table 8.
Date
Revision history
Revision
09-Sep-2004
06-Sep-2005
16-Aug-2006
2
3
4
Changes
Preliminary version
Final version
New template, no content change
14/15
STP5NK80Z - STP5NK80ZFP
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