STP40NF10
N-channel 100 V, 0.025 Ω , 50 A TO-220 low gate charge STripFET™ II Power MOSFET
Features
Order code
STP40NF10
V
DSS
100 V
R
DS(on) max.
< 0.028 Ω
■
■
■
Exceptional dv/dt capability
Low gate charge
100% avalanche tested
I
D
50 A
Application
Switching applications
Description
This N-channel 100 V Power MOSFET is the latest development of STMicroelectronics unique
"single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
TO-220
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
STP40NF10
Marking
P40NF10@
Package
TO-220
Packaging
Tube
November 2010 Doc ID 11096 Rev 5 1/12 www.st.com
12
3
4
5
1
2
Contents
Contents
STP40NF10
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 11096 Rev 5
STP40NF10 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
I
DM
(2)
P
TOT
Drain-source voltage (V
Gate- source voltage
GS
= 0)
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25 °C
= 100 °C
Total dissipation at T
C
= 25 °C
Derating factor dv/dt
(3)
E
AS
(4)
T stg
T j
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
1.
Limited by wire bonding
2.
Pulse width limited by safe operating area
3.
I
SD
≤ ≤
DD
V
(BR)DSS
, T j
T
JMAX.
4.
Starting T j
= 25 °C, I
D
= 50 A, V
DD
=25 V
Table 3.
Symbol
Thermal data
Parameter
R thj-case
Thermal resistance junction-case max
R thj-a
T l
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Value
100
±20
50
35
200
150
1
27
385
- 55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns mJ
°C
Value
1
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 11096 Rev 5 3/12
Electrical characteristics STP40NF10
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source
Breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage
Drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating
V
DS
=Max rating,T
C
=125°C
V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 25 A
Min.
Typ.
Max.
Unit
100
2 3
1
10
V
µA
µA
±100 nA
4 V
0.025
0.028
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions g fs
(1)
C iss
C oss
C rss
Forward transconductance V
DS
= 15 V
,
I
D
=28 A
Input capacitance
Output capacitance V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
Reverse transfer capacitance
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
= 50 V, I
D
= 10V
= 40 A,
(see Figure 15)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Min.
Typ.
Max.
Unit
-
-
22
2180
298
S pF pF
-
83.7
pF
46.5
62 nC
13.3
nC
17.5
22.5
nC
Table 6.
Symbol t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V
DD
= 50V, I
D
= 25A
R
G
= 4.7
Ω V
GS
= 10V
(see Figure 14)
Min.
Typ.
Max.
Unit
-
-
21
46
54
13
-
ns ns ns ns
4/12 Doc ID 11096 Rev 5
STP40NF10 Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
I t
Q rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 50A, V
GS
= 0
I
SD
= 50A, V
DD
= 25V di/dt = 100A/µs,
T j
= 150°C
(see Figure 16)
Min.
Typ.
Max Unit
-
-
80
320
1.5
A
A
V
-
80
250
6.4
ns nC
A
Doc ID 11096 Rev 5 5/12
Electrical characteristics STP40NF10
Figure 2.
Safe operating area for TO-220 Figure 3.
Thermal impedance for TO-220
Figure 4.
Output characteristics Figure 5.
Transfer characteristics
Figure 6.
Transconductance Figure 7.
Static drain-source on resistance
6/12 Doc ID 11096 Rev 5
STP40NF10 Electrical characteristics
Figure 8.
Gate charge vs. gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage vs. temperature
Figure 11. Normalized on resistance vs. temperature
Figure 12. Source-drain diode forward characteristics
Figure 13.
Normalized breakdown voltage vs. Tj
Doc ID 11096 Rev 5 7/12
Test circuit
3 Test circuit
STP40NF10
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped Inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
AM01470v1
Figure 18. Unclamped inductive waveform
V
(BR)D SS
V
D
Figure 19. Switching time waveform t on t off t r td on td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
8/12 Doc ID 11096 Rev 5
STP40NF10
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Doc ID 11096 Rev 5 9/12
Package mechanical data
Dim
L
L1
L20
L 3 0
∅ P
Q e1
F
H1
J1
D
D1
E e
A b b 1 c
TO-220 type A mechanical data
mm
Typ Min
4.40
0.61
1.14
0.4
8
15.25
10
2.40
4.
9 5
1.2
3
6.20
2.40
1 3
3 .50
3 .75
2.65
1.27
16.40
2 8 .
9 0
STP40NF10
Max
4.60
0.
88
1.70
0.70
15.75
10.40
2.70
5.15
1.
3 2
6.60
2.72
14
3 .
93
3 .
8 5
2.
9 5
10/12 Doc ID 11096 Rev 5
0015988_Rev_S
STP40NF10
Table 8.
Date
Document revision history
16-Dec-2004
17-Aug-2006
31-Jan-2007
19-Sep-2007
10-Nov-2010
Revision
1
2
3
4
5
Changes
First version.
The document has been reformatted.
Typo mistake on
Table 2 .
Added DPAK.
Removed DPAK.
Revision history
Doc ID 11096 Rev 5 11/12
STP40NF10
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