IRF640
IRF640FP
N-channel 200V - 0.15
Ω
- 18A TO-220/TO-220FP
Mesh overlay™ Power MOSFET
General features
Type
IRF640
IRF640FP
V
DSS
200V
200V
■
■
■
Extremely high dv/dt capability
Very low intrinsic capacitances
Gate charge minimized
R
DS(on)
<0.18
Ω
<0.18
Ω
I
D
18A
18A
Description
This power MOSFET is designed using the company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
Applications
■ Switching application
TO-220
1
2
3
TO-220FP
1
2
3
Internal schematic diagram
Obsolete Product(s) - Obsolete Product(s)
Part number
IRF640
IRF640FP
Marking
IRF640
IRF640FP
Package
TO-220
TO-220FP
Packaging
Tube
Tube
September 2006 Rev 9 1/14 www.st.com
14
3
4
5
1
2
Contents
Contents
IRF640 - IRF640FP
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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IRF640 - IRF640FP Electrical ratings
Table 1.
Absolute maximum ratings
Symbol Parameter
V
DS
V
GS
P
I
D
I
D
I
DM
(2)
TOT
Drain-source voltage (V
Gate-source voltage
GS
= 0)
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope dv/dt
(3)
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t=1s; Tc= 25°C)
T
J
T stg
Operating junction temperature
Storage temperature
1.
Limited only by maximum temperature allowed
2.
Pulse width limited by safe operating area
3.
I
SD
≤ di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
18
11
72
125
1.0
5
TO-220
Value
TO-220FP
200
± 20
18
(1)
11
(1)
72
(1)
40
0.32
5
Unit
A
W
W/°C
V/ns
A
A
V
V
--
150
-65 to 150
2500 V
°C
Table 2.
Thermal data
Value
Symbol Parameter Unit
I
AS
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
TO-220 TO-220FP
R thj-case
R thj-a
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Rthc-sink Thermal resistance case-sink typ
1.0
62.5
0.5
3.12
°C/W
°C/W
°C/W
Maximum lead temperature for soldering
T l purpose
300
Obsolete Product(s) - Obsolete Product(s)
°C
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Symbol Parameter Value Unit
18
280
A mJ
3/14
Electrical characteristics IRF640 - IRF640FP
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test conditions
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 9A
Min.
Typ.
Max.
Unit
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
200
2 3
1
10
µA
µA
±
100 nA
4
0.15
0.18
V
V
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions g fs
(1)
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 9A
C iss
C oss
C rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25V, f=1 MHz, V
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
=160V, I
D
=10V
= 18A
GS
=0
Min.
Typ.
Max.
Unit
7 11 S
1200
200
60
1560
260
80 pF pF pF
55
10
21
72 nC nC nC
Table 6.
Symbol
Switching times
Parameter Test conditions Min.
Typ.
Max.
Unit
Obsolete Product(s) - Obsolete Product(s) t r
V = 100V, I
D
= 9A,
13 17 t r(Voff)
Rise Time
Off-voltage rise time
(see Figure 14)
27
21
35
27 ns ns t f
R
G
= 4.7
Ω, V
GS
= 10V
V
DD
=160V, I
D
=18A,
R
G
=4.7
Ω, V
GS
=10V fall time 25 32 ns ns cross-over time
(see Figure 16)
50 65 ns t c
4/14
IRF640 - IRF640FP Electrical characteristics
Table 7.
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Test conditions
I
SD
=18A, V
GS
=0
I
SD
=18A, di/dt = 100A/µs,
V
DD
=50V, Tj=150°C
(see Figure 16)
Min Typ.
Max Unit
18 A
72 A
1.5
V
240
1.8
15 ns
µC
A
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Electrical characteristics IRF640 - IRF640FP
Figure 1.
Safe operating area for TO-220 Figure 2.
Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-220/FP Figure 4.
Thermal impedance for TO-220/FP
Figure 5.
Output characterisics Figure 6.
Transfer characteristics
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IRF640 - IRF640FP
Figure 7.
Transconductance
Electrical characteristics
Figure 8.
Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12.
Normalized on resistance vs temperature
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Electrical characteristics
Figure 13. Source-drain diode forward characteristics
IRF640 - IRF640FP
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IRF640 - IRF640FP
3 Test circuit
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped Inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
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Package mechanical data
4 Package mechanical data
IRF640 - IRF640FP
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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IRF640 - IRF640FP Package mechanical data
DIM.
e1
F
H1
J1
L
L1
L20
L30
øP
Q
D
E e
A b b1 c
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA mm.
TYP MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
16.40
28.90
3.85
2.95
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
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Package mechanical data IRF640 - IRF640FP
DIM.
G1
H
L2
L3
F
F1
F2
G
A
B
D
E
L4
L5
L6
L7
Ø
0.75
1.15
1.15
4.95
2.4
10
MIN.
4.4
2.5
2.5
0.45
28.6
9.8
2.9
15.9
9
3
TO-220FP MECHANICAL DATA mm.
TYP
16
1
1.7
1.7
5.2
2.7
10.4
MAX.
4.6
2.7
2.75
0.7
30.6
10.6
3.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
L6
L7
L3
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L5
1 2 3
L4 L2 Obsolete Product(s) - Obsolete Product(s)
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IRF640 - IRF640FP
Table 8.
Date revision history
Revision
09-Sep-2004
04-Sep-2006
8
9
Changes
Final version
New template, no content change
Revision history
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IRF640 - IRF640FP
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