STP310N10F7
N-channel 100 V, 2.3 m Ω typ., 180 A STripFET™ VII DeepGATE™
Power MOSFET in a TO-220 package
Datasheet
-
production data
TAB
Features
Order code
STP310N10F7
V
DS
100 V
R
DS(on)
max.
2.7 m Ω
I
D
180 A
•
Ultra low on-resistance
•
100% avalanche tested
1
2
3
TO-220
Applications
• Switching applications
Figure 1. Internal schematic diagram
'7$%
Description
This device utilizes the 7 th
generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power
MOSFET exhibits the lowest R
DS(on)
in all packages.
*
6
$0Y
Order codes
STP310N10F7
Table 1. Device summary
Marking Package
310N10F7 TO-220
Packaging
Tube
July 2013
This is information on a product in full production.
DocID022287 Rev 7 1/13 www.st.com
3
4
5
1
2
Contents
Contents
STP310N10F7
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 DocID022287 Rev 7
STP310N10F7 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(2)
P
TOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25°C
=100°C
Total dissipation at T
C
= 25°C
Derating factor
E
AS
(3)
T j
T stg
Single pulse avalanche energy
(T
J
= 25 °C, L=0.55 mH, I as
=65 A )
Operating junction temperature storage temperature
1.
Current limited by package.
2.
Pulse width limited by safe operating area.
3.
Starting T
J
=25°C, I
D
=60 A, V
DD
=50 V
Value
100
± 20
180
120
720
315
2.1
1
- 55 to 175
Symbol
R thj-case
R thj-amb
Parameter
Table 3. Thermal data
Value
0.48
Thermal resistance junction-case
Thermal resistance junction-ambient max
62.5
Unit
V
V
A
A
A
W
W/°C
J
°C
Unit
°C/W
°C/W
DocID022287 Rev 7 3/13
13
Electrical characteristics STP310N10F7
(T
CASE
= 25 °C unless otherwise specified).
Symbol Parameter
Table 4. On/off states
Test conditions
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage (V
GS
= 0)
I
D
= 250 µA
Zero gate voltage drain current (V
GS
= 0)
V
DS
= 100 V
V
DS
= 100 V, T
C
= 125°C
Gate body leakage current
(V
DS
= 0)
V
GS
= 20 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on- resistance
V
GS
= 10 V, I
D
= 60 A
Min.
Typ.
Max.
Unit
100
2.5
3.5
2.3
1
100
100
4.5
2.7
V
µA
µA nA
V m Ω
Symbol
C iss
C oss
C
Q
Q
Q rss g gs gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-source charge
Table 5. Dynamic
Test conditions
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
V
DD
= 50 V, I
D
= 180 A,
V
GS
= 10 V
(see Figure 14
)
-
-
-
-
Min.
Typ.
Max.
Unit
-
12800
3500
-
pF pF
170
180
78
34
-
-
-
pF nC nC nC
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 50 V, I
D
= 90 A
R
G
= 4.7 Ω V
GS
= 10 V
(see Figure 13
,
Figure 18 )
Min.
Typ.
Max.
Unit
-
-
-
62
108
148
40
-
-
-
ns ns ns ns
4/13 DocID022287 Rev 7
STP310N10F7 Electrical characteristics
Symbol Parameter
Table 7. Source drain diode
Test conditions Min.
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2) t rr
Q rr
I
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulse duration = 300µs, duty cycle 1.5%
I
SD
=60 A, V
GS
=0
I
SD
=180 A, di/dt = 100 A/µs,
V
DD
=80 V, Tj=150°C
(see
Figure 15
)
-
-
-
-
-
-
Typ.
Max.
Unit
180 A
720 A
85
200
4.7
1.5
V ns nC
A
DocID022287 Rev 7 5/13
13
Electrical characteristics STP310N10F7
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
I
D
(A)
DS(on)
AM14733v1
Figure 3. Thermal impedance
280tok
K
δ =0.5
100
Oper
Limited b
0.2
0.1
0.05
10 100µs 10
-1
0.02
1
Tj=175°C
Tc=25°C
Sinlge pulse
1ms
10ms
0.01
Single pulse
Zth=k Rthj-c
δ
=tp/
τ tp
τ
0.1
0.1
1 10 V
DS
(V)
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1 t p
(s)
Figure 4. Output characteristics
AM14734v1
I
D
(A)
300
V
GS
=10V
8V
250
7V
200
150
100
50
0
0 2 4 6
6V
8
5V
V
DS
(V)
Figure 5. Transfer characteristics
AM14735v1
I
D
(A)
350
V
DS
= 2V
300
250
200
150
100
50
0
0 1 2 3 4 5 6 7 8 V
GS
(V)
Figure 6. Gate charge vs gate-source voltage
AM14736v1
V
GS
(V)
10
V
DD
=50V
I
D
=180A
Figure 7. Static drain-source on-resistance
R
DS(on)
(m Ω )
2.45
V
GS
=10V
AM14737v1
2.40
8
2.35
6 2.30
2.25
4
2.20
2
0
0 50 100 150 Q g
(nC)
2.15
2.10
0 40 80 120 160 I
D
(A)
6/13 DocID022287 Rev 7
STP310N10F7 Electrical characteristics
Figure 8. Capacitance variations
AM14738v1
C
(pF)
14000
12000
10000
8000
6000
4000
2000
0
0
Crss
Ciss
20 40 60
Coss
80 100 V
DS
(V)
Figure 10. Normalized gate threshold voltage vs temperature
AM14741v1
V
GS(th)
(norm)
I
D
= 250µA
1.0
Figure 9. Source-drain diode forward characteristics
AM14739v1
V
SD
(V)
1.05
T
J
=-50°C
0.95
0.85
0.75
T
J
=25°C
0.65
T
J
=150°C
0.55
0.45
0 40 80 120 160 I
SD
(A)
Figure 11. Normalized on-resistance vs temperature
AM14740v1
R
DS(on)
(norm)
2.0
I
D = 60A
1.6
0.90
1.2
0.80
0.70
0.8
0.4
-75 -25 0 25 75 125 T
J
(°C)
0.60
-75 -25 0 25 75 125 T
J
(°C)
Figure 12. Normalized B
VDSS
vs temperature
AM14742v1
BV
DSS
(norm)
I
D
= 1mA
1.04
1.02
1.00
0.98
0.96
0.94
-75 -25 0 25 75 125 T
J
(°C)
DocID022287 Rev 7 7/13
13
Test circuits
3 Test circuits
STP310N10F7
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 16. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
V
D
I
D
L
2200
μ F
3.3
μ F
V
DD
D.U.T.
P w
AM01471v1
Figure 18. Switching time waveform t on td on t r t off td off t f
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
8/13 DocID022287 Rev 7
STP310N10F7
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID022287 Rev 7 9/13
13
Package mechanical data
Dim.
D
D1
E e e1
F
H1
J1
L
A b b1 c
L1
L20
L30
∅
P
Q
STP310N10F7
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Table 8. TO-220 type A mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
16.40
28.90
3.75
2.65
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
10/13 DocID022287 Rev 7
STP310N10F7
Figure 19. TO-220 type A drawing
Package mechanical data
DocID022287 Rev 7
BW\SH$B5HYB7
11/13
13
Revision history STP310N10F7
Date
19-Oct-2011
21-Dec-2011
06-Mar-2012
20-Aug-2012
31-Oct-2012
07-Dec-2012
31-Jul-2013
Table 9. Document revision history
Revision Changes
1
2
3
4
5
6
7
Initial version.
Updated title and description in cover page.
Updated I
D
value at T
C
= 25°C in the whole document.
Table 5
,
Table 6
and Table 7 have been updated with typical
values.
Document status promoted from preliminary to production data.
Added Section 2.1: Electrical characteristics (curves)
.
Minor text changes.
– Added: H
2
PAK-2 and H
2
PAK-6 packages
– Updated: Section 4: Package mechanical data and Section 4:
Package mechanical data
– Minor text changes
– Minor text changes
– The part numbers STH310N10F7-2, STH310N10F7-6 have been moved to a separate datasheet
– Modified: I
DSS
and V
GS(th)
values in
Table 4 .
– Minor text changes
– Inserted: E
AS
value in
Table 2
12/13 DocID022287 Rev 7
STP310N10F7
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