TN2010H-6I
Datasheet
20 A 600 V high temperature SCR thyristors in insulated TO-220
G
A
K
K
A
G
TO-220AB insulated
Product status
TN2010H-6I
Order code
Package
I
T(RMS)
V
DRM
/V
RRM
T j
max.
Product summary
TN2010H-6I
TO-220AB Ins.
20 A
600 V
150 °C
Features
• High junction temperature: T j
max. = 150 °C
• High static immunity dV/dt = 400 V/µs up to 150 °C
• Peak off-state voltage V
DRM
/V
RRM
= 600 V
• High turn-on current rise dI/dt = 100 A/µs
• Insulated package TO-220AB:
– Insulated voltage: 2500 V
RMS
– Complies with UL 1557 (File ref : E81734)
• ECOPACK2 compliant
• Halogen-free molding, lead-free plating
Applications
• General purpose AC line load switching
• Motor control circuits and starters
• Inrush current limiting circuits
• Heating resistor control, solid state relays
Description
Thanks to its operating junction temperature up to 150°C, the TN2010H-6I offers high thermal performance operation up to 20 A rms.
Its trade-off noise immunity (dV/dt = 400 V/μs) versus its gate triggering current
(I
GT
= 10 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust and compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances and inrush current limiting circuits.
DS13202 - Rev 1 - December 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
TN2010H-6I
Characteristics
Characteristics
I
T(AV)
I
TSM
Table 1. Absolute maximum ratings (limiting values), T j
= 25 °C unless otherwise specified
Symbol
I
T(RMS)
Parameter
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
Non repetitive surge peak on-state current (T j
initial = 25 °C)
I 2 t dl/dt
I 2 t value for fusing, (T j
initial = 25 °C)
I
G
= 2 x I
GT
, tr ≤ 100 ns
Critical rate of rise of on-state current
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GM
P
G(AV)
V
RGM
T stg
T j
T l
V iso
Repetitive peak off-state voltage
Non Repetitive peak off-state voltage
Peak gate current
Average gate power dissipation
Maximum peak reverse voltage
Storage junction temperature range t p
= 20 µs
Maximum operating junction temperature
Maximum lead temperature soldering during 10 s
Insulation rms voltage, 1 minute
T c
= 113 °C
T c
= 112 °C
T c
= 130 °C
T c
= 139 °C t p
= 8.3 ms t p
= 10 ms t p
= 10 ms f = 60 Hz t p
= 10 ms
T j
= 150 °C
T j
= 150 °C
Value
20
13
8
5
197
180
162
100
600
V
DRM
/V
RRM
+ 100 V
4
1
5
-40 to +150
-40 to +150
260
2500
Unit
A
A
A
A 2 s
A/µs
W
V
°C
V
V
A
°C
°C
V
Symbol
Table 2. Electrical characteristics (T j
= 25 °C unless otherwise specified)
Test conditions
I
GT
V
D
= 12 V, R
L
= 33 Ω
V
GT
V
GD
I
H
I
L
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA, gate open
I
G
= 1.2 x I
GT dV/dt V
D
= 402 V, gate open t gt t q
I
I
T
T
= 40 A, V
= 20 A, V
D
D
= 402 V, I
G
= 402 V, (dI
= 20 mA, (dI
G
G
/dt) max = 0.2 A/µs
/dt) max = 30 A/µs, V
R
= 25 V, dV
D
/dt = 40 V/µs
Typ.
Value Unit
5 mA
Max.
10
Max.
1.3
V
T j
= 150 °C Min.
0.1
Max.
40
V mA
Max.
60
T j
= 150 °C Min.
400 V/µs
Typ.
1.9
µs
T j
= 150 °C Typ.
70 mA
µs
DS13202 - Rev 1 page 2/10
TN2010H-6I
Characteristics
Symbol
V
TM
V
TO
R
D
I
DRM
, I
RRM
I
T
= 40 A, t p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
DRM
; V
R
= V
RRM
Table 3. Static characteristics
Test conditions
T j
= 25 °C
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
Symbol
R th(j-c)
R th(j-a)
Junction to case (DC)
Junction to ambient (DC)
Table 4. Thermal parameters
Parameter
Max.
Typ.
Max.
Max.
Max.
Max.
Value
1.60
0.82
17.5
5
3.9
Unit
V mΩ
µA mA
Value
2.1
60
Unit
°C/W
DS13202 - Rev 1 page 3/10
TN2010H-6I
Characteristics (curves)
1.1
Characteristics curves
Figure 1. Maximum power dissipation versus average onstate current
20
P(W)
18
16
14
12
10
8
6
4
2
0
0 2 4
α = 30 °
α = 60 °
α = 90 °
α = 120 °
α = 180 °
6 8
360 °
α
10 12
DC
IT
(AV)
(A)
14 16
Figure 2. Average and DC on-state current versus case temperature
22
20
18
16
14
12
10
8
6
4
2
0
0
IT
(AV)
(A)
α = 30°
25
α = 60°
α = 90°
50
α = 120°
T c
(°C)
75
DC
α = 180°
100 125 150
1
0.5
0
0
2.5
2
1.5
Figure 3. Average and D.C. on state current versus ambient temperature
3
I
T(AV)
(A)
25 50 75 100 125 150
Figure 4. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration
1.0E+00
K = [Zth/ Rth]
Zth(j-c)
Zth(j-a)
1.0E-01
1.0E-02
1.0E-03 1.0E-02 1.0E-01 t
P
(s)
1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 5. Relative variation of gate triggering current and gate voltage versus junction temperature (typical values)
I
GT
, V
GT [ Tj ] / I GT
, V
GT [ Tj = 25 °C]
2.5
2.0
I
GT
1.5
1.0
0.5
0.0
-50 -25
V
GT
0 25
T j
(°C)
50 75 100 125 150
1.6
1.2
0.8
Figure 6. Relative variation of holding and latching current versus junction temperature (typical values)
2.4
I
H
, I
L [ Tj ] / I H
, I
L [ Tj = 25 °C]
2.0
I
H
I
L
0.4
0.0
-50 -25 0 25
T j
(°C)
50 75 100 125 150
DS13202 - Rev 1 page 4/10
α α
TN2010H-6I
Characteristics (curves)
Figure 7. Relative variation of static dV/dt immunity versus junction temperature
12 dV/dt [Tj] / dV/dt [Tj= 150 °C]
Above test equipment capability
8
4
0
25 50
V
D
= V
R
= 402 V
75
T j
(°C)
100 125 150
Figure 8. Surge peak on-state current versus number of cycles
200
I
TSM
(A)
Non repetitive Tj = 25 °C
150
One cycle
100
Repetitive Tc = 113 °C
50
0
1 10
Number of cycles
100 1000
Figure 9. Non repetitive surge peak on-state current for a sinusoidal pulse with width t p
< 10 ms
10000
I
TSM
(A)
Tj initial = 25 °C
1000
100
10
0.01
dl/dt limitation: 100 A/µs
0.1
Figure 10. On-state characteristics (maximum values)
1000
I
TM
(A)
100
I
TSM
10
1
0
Tj = 150 °C
0.5
1
Tj = 25 °C
1.5
2 tp(ms)
10
2.5
1
Figure 11. Relative variation of leakage current versus junction
1.E+00
IDRM, IRRM [ Tj ; VDRM, VRRM ] / IDRM , IRRM [ 150 °C; 600 V ]
VDRM = VRRM = 600 V
1.E-01
V t0
Tj max:
= 0.82 V
R d = 17.5 mΩ
3
V
TM
(V)
3.5
4
1.E-02
1.E-03
1.E-04
25 50 75 100 125
Tj(°C)
150
DS13202 - Rev 1 page 5/10
α
α
α
2
2.1
TN2010H-6I
Package information
Package information
•
•
•
•
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-220AB insulated package information
Molding compound resin is halogen-free and meets flammability standard UL94 level 0
Lead-free package leads finishing
ECOPACK2 compliant
Recommended torque: 0.4 to 0.6 N.m
Figure 12. TO-220AB insulated package outline
B C b2
Resin gate 0.5 mm max. protusion (1)
I
L
F
A
I4 l3 a1 c2 l2 a2 b1 Resin gate 0.5 mm max. protusion (1) e
(1)Resin gate position accepted in one of the two positions or in the symmetrical opposites.
M c1
DS13202 - Rev 1 page 6/10
DS13202 - Rev 1
TN2010H-6I
TO-220AB insulated package information
Table 5. TO-220AB insulated package mechanical data
Dimensions
Ref.
e
F
I
L
I2
I3
I4
M b1 b2
C c1 c2
A a1 a2
B
Min.
15.20
2.40
6.20
3.73
2.65
1.14
1.14
15.80
13.00
10.00
0.61
1.23
4.40
0.49
2.40
Millimeters
Typ.
3.75
16.40
2.6
1. Inch dimensions are for reference only.
Max.
15.90
2.70
6.60
3.88
2.95
1.70
1.70
16.80
14.00
10.40
0.88
1.32
4.60
0.70
2.72
Min.
0.5984
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
Inches (1)
Typ.
0.1476
0.6457
0.1024
Max.
0.6260
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
page 7/10
3
TN2010H-6I
Ordering information
Ordering information
Series
TN = SCR
RMS current
20 = 20 A
Gate triggering current
10 = 10 mA
High temperature
H = 150 °C
Voltage
6 = 600 V
Package
I = TO-220AB insulated
Delivery mode
Blank = tube
Figure 13. Ordering information scheme
TN 20 10 H - 6 I
Order code
TN2010H-6I
Marking
TN2010H6I
Table 6. Ordering information
Package
TO-220AB Ins.
Weight
2.3 g
Base qty.
50
Delivery mode
Tube
DS13202 - Rev 1 page 8/10
Revision history
Date
16-Dec-2019
Table 7. Document revision history
Revision
1
Changes
Initial release.
TN2010H-6I
DS13202 - Rev 1 page 9/10
TN2010H-6I
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DS13202 - Rev 1 page 10/10
