TN3015H-6I
Datasheet
High temperature 30 A, 600 V TO220 insulated thyristor SCRs
G
A
K
K
A
G
TO-220AB insulated
Product status
TN3015H-6I
Order code
Package
V
DRM
/V
RRM
T j
I
GT
Product summary
TN3015H-6I
TO-220AB Ins.
600 V
150 °C
15 mA
Features
• High junction temperature: T j
= 150 °C
• High noise immunity dV/dt = 1000 V/µs up to 150 °C
• Peak off-state voltage V
DRM
/V
RRM
= 600 V
• High turn-on current rise dI/dt = 100 A/µs
• ECOPACK2 compliant
• Insulated package TO-220AB:
– Insulated voltage: 2500 V
RMS
– Complies with UL 1557 (File ref : E81734)
Applications
• General purpose AC line load switching
• Motorbike voltage regulator circuits
• Inrush current limiting circuits
• Motor control circuits and starters
• Heating resistor control, Solid State Relays
• Lighting
Description
Thanks to its operating junction temperature up to 150°C, the TN3015H-6I offers high thermal performance operation up to 30 A rms.
Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current
(I
GT
= 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust and compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances and inrush current limiting circuits.
DS12967 - Rev 1 - May 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
TN3015H-6I
Characteristics
Characteristics
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I 2 t dl/dt
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GM
P
G(AV)
V
RGM
T stg
T j
T l
V ins
Table 1. Absolute maximum ratings (limiting values)
Parameter
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
Non repetitive surge peak on-state current (T j
initial = 25 °C)
T c
= 96 °C
T c
= 96 °C
T c
= 111 °C
T c
= 127 °C t p
= 8.3 ms t p
= 10 ms t p
= 10 ms I 2 t value for fusing (T j
initial = 25 °C)
I
G
= 2 x I
GT
, tr ≤ 100 ns
Critical rate of rise of on-state current
Repetitive peak off-state voltage
Non repetitive surge peak off-state voltage
Peak gate current
Average gate power dissipation t t f = 60 Hz
Maximum peak reverse gate voltage
Storage junction temperature range
Maximum operating junction temperature
Maximum lead temperature soldering during 10 s
Insulation RMS voltage, 1 minute p p
= 10 ms
= 20 µs
T j
= 25 °C
T j
= 25 °C
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
Value
30
19
15
10
295
270
364
100
Unit
A
A
A
A 2 s
A/µs
600 V
V
DRM
/V
RRM
+ 100 V
4 A
1 W
5
-40 to +150
-40 to +150
260
2500
°C
V
V
°C
°C
Symbol
Table 2. Electrical characteristics (T j
= 25 °C unless otherwise specified)
Test conditions
I
GT
V
D
= 12 V, R
L
= 33 Ω
V
GT
V
GD
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
H
I
L
I
I
T
= 500 mA, gate open
G
= 1.2 x I
GT dV/dt V
D
= 402 V, gate open t gt t q
I
T
= 60 A, V
D
= 600 V, I
G
= 100 mA, (dI
G
/dt) max = 0.2 A/µs
I
T
= 30 A, V
D
= 402 V,(di/dt)off = 30 A/µs, V
R
= 25 V, dV
D
/dt = 50 V/µs
T j
= 150 °C
T j
= 150 °C
T j
= 150 °C
Value Unit
Min.
Max.
6
15
Max.
1.3
mA
V
Min.
0.15
Max.
60
V mA
Max.
75 mA
Min.
1000 V/µs
Typ.
1.9
Typ.
80
µs
µs
DS12967 - Rev 1 page 2/10
TN3015H-6I
Characteristics
Symbol
V
TM
V
TO
R
D
I
DRM
,
I
RRM
I
TM
= 60 A, t p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
DRM
, V
R
= V
RRM
Symbol
R th(j-c)
R th(j-a)
Junction to case
Junction to ambient
Table 3. Static characteristics
Test conditions
T j
= 25 °C
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
Value Unit
Max.
1.6
V
Max.
0.84
Max.
14 mΩ
Max.
10
5
µA mA
Table 4. Thermal parameters
Parameter Value Unit
Max.
1.9
°C/W
Typ.
60
DS12967 - Rev 1 page 3/10
TN3015H-6I
Characteristics (curves)
1.1
Characteristics curves
Figure 1. Maximum power dissipation versus average onstate current
30
P(W)
α = 180 ° DC
25
20 α = 30 °
α = 60 °
α = 90 °
α = 120 °
15
10
5
0
0 5 10
360 °
α
15 20
IT
(AV)
(A)
25
Figure 2. Average and DC on-state current versus case temperature
35
IT
(AV)
(A)
D.C
30
25
α=90°
α=120°
α=180°
α=30°
α=60°
20
15
10
5
0
0 25 50
T c
(°C)
75 100 125 150
2.5
2.0
1.5
1.0
0.5
Figure 3. Average and D.C. on state current versus ambient temperature
3.0
I
T(AV)
(A)
0.0
0 25 50 75 100 125 150
Figure 4. On-state characteristics (maximum values)
1000
I
TM
(A)
100
V t0
Tj max:
= 0.84 V
R d = 14 mΩ
10
Tj = 150 °C
1
0.0
0.5
1.0
Tj = 25 °C
1.5
2.0
2.5
3.0
3.5
V
TM
(V)
4.0
4.5
Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration
1,0E+00
K = [Zth/ Rth]
Figure 6. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values)
I
GT
, V
GT [ Tj ] / I GT
, V
GT [ Tj = 25 °C]
2.5
Zth(j-c)
2.0
I
GT
1,0E-01 Zth(j-a)
1.5
1,0E-02
1,0E-03
1,0E-03 1,0E-02 1,0E-01 t
P
(s)
1,0E+00 1,0E+01 1,0E+02 1,0E+03
1.0
0.5
0.0
-50
V
GT
-25 0 25
T j
(°C)
50 75 100 125 150
DS12967 - Rev 1 page 4/10
α α
TN3015H-6I
Characteristics (curves)
Figure 7. Relative variation of holding and latching current versus junction temperature (typical values)
2.5
2.3
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
-50
IH, IL [ Tj ] / IH, IL [ Tj = 25 °C]
I
L
-25
I
H
0 25
T j
(°C)
50 75 100 125 150
3
2
1
Figure 8. Relative variation of static dV/dt immunity versus junction temperature (typical values)
5 dV/dt [Tj] / dV/dt [Tj= 150 °C]
VD = 402 V
4
0
25 50 75
T j
(°C)
100 125 150
Figure 9. Surge peak on-state current versus number of cycles
300
I
TSM
(A)
Non repetitive Tj = 25 °C
200
One cycle
Figure 10. Non repetitive surge peak on-state current for a sinusoidal pulse with width t p
< 10 ms
10000
I
TSM
(A) dl/dt limitation: 100 A/µs Tj initial = 25 °C
I
TSM
1000
100
Repetitive Tc = 96 °C
0
1
100
10
Number of cycles
100 1000
10
0.01
0.10
1.00
Figure 11. Relative variation of leakage current versus junction temperature
1.0E+00
IDRM, IRRM [ Tj ; VDRM, VRRM ] / IDRM , IRRM [ 150 °C; 600 V ]
VDRM = VRRM = 600 V
1.0E-01 tp(ms)
10.00
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25 50 75 100 125
Tj(°C)
150
DS12967 - Rev 1 page 5/10
α
α
α
2
2.1
TN3015H-6I
Package information
Package information
•
•
•
•
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-220AB insulated package information
Molding compound resin is halogen-free and meets flammability standard UL94 level 0
Lead-free package leads finishing
ECOPACK2 compliant
Recommended torque: 0.4 to 0.6 N.m
Figure 12. TO-220AB insulated package outline
B C b2
Resin gate 0.5 mm max. protusion (1)
I
L
F
A
I4 l3 a1 c2 l2 a2 b1 Resin gate 0.5 mm max. protusion (1) e
(1)Resin gate position accepted in one of the two positions or in the symmetrical opposites.
M c1
DS12967 - Rev 1 page 6/10
DS12967 - Rev 1
TN3015H-6I
TO-220AB insulated package information
Table 5. TO-220AB insulated package mechanical data
Dimensions
Ref.
e
F
I
L
I2
I3
I4
M b1 b2
C c1 c2
A a1 a2
B
Min.
15.20
2.40
6.20
3.73
2.65
1.14
1.14
15.80
13.00
10.00
0.61
1.23
4.40
0.49
2.40
Millimeters
Typ.
3.75
16.40
2.6
1. Inch dimensions are for reference only.
Max.
15.90
2.70
6.60
3.88
2.95
1.70
1.70
16.80
14.00
10.40
0.88
1.32
4.60
0.70
2.72
Min.
0.5984
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
Inches (1)
Typ.
0.1476
0.6457
0.1024
Max.
0.6260
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
page 7/10
3
TN3015H-6I
Ordering information
Ordering information
Order code
TN3015H-6I
Figure 13. Ordering information scheme
TN 30 15 H - 6 I
Series
TN = SCR
RMS current
30 = 30 A
Gate triggering current
15 = 15 m A
High temperature
H = 150 °C
Voltage
6 = 600 V
Package
I = TO-220AB insulated
Delivery mode
Blank = tube
Marking
TN3015H6I
Table 6. Ordering information
Package
TO-220AB ins.
Weight
2.3 g
Base qty.
50
Delivery mode
Tube
DS12967 - Rev 1 page 8/10
Revision history
Date
22-May-2019
Table 7. Document revision history
Revision
1 Initial release.
Changes
TN3015H-6I
DS12967 - Rev 1 page 9/10
TN3015H-6I
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© 2019 STMicroelectronics – All rights reserved
DS12967 - Rev 1 page 10/10
