STRH12P10
Datasheet
Rad-Hard 100 V, 12 A, P-channel Power MOSFET
1
2
3
TO-257 AA
The case is not connected to any lead
D(1)
G(3)
S(2)
Product status link
STRH12P10
SCO6140p
Features
V
DS
100 V
• Fast switching
• 100% avalanche tested
• Hermetic package
• 100 krad TID
• SEE radiation hardened
I
D
12 A
R
DS(on)
typ.
265 mΩ
Q g
40 nC
Description
The STRH12P10 is a P-channel Power MOSFET developed with the Rad-hard
STripFET technology in hermetic TO-257AA package.
Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/029 detail specification. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Part numbers
STRH12P10GY1
STRH12P10GYG
STRH12P10GYT
Quality level
Engineering model
Product summary
ESCC part number
Package
-
TO-257AA
ESCC flight
5205/029
Lead finish
Gold
Solder dip
Radiation level
-
100 krad
100 krad
Note: See
Table 8
for ordering information.
DS8699 - Rev 8 - January 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
T
C
= 25 °C unless otherwise specified
Table 1. Absolute maximum ratings (pre-irradiation)
Symbol
V
DS
V
GS
Drain-source voltage (V
Gate-source voltage
GS
= 0)
Parameter
I
D
(1)
I
DM
(2)
P
TOT
dv/dt (3)
T stg
T j
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total power dissipation at T case
= 25 °C
Peak diode recovery voltage slope
Storage temperature range
Max. operating junction temperature range
1. Rated according to the R thj-case
+ R thc-s
2. Pulse width limited by safe operating area.
3. I
SD
≤ 12 A, di/dt ≤ 36 A/μs, V
DD
= 80 %V
(BR)DSS
.
Value
100
±18
12
7.5
48
75
2.4
-55 to 150
150
Symbol
R thj-case
R thc-s
Table 2. Thermal data
Parameter
Thermal resistance junction-case max.
Thermal resistance case-sink typ.
Value
1.47
0.20
Table 3. Avalanche characteristics
Symbol
E
I
E
AR
AS
(1)
AR
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by T j
max)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V) at 110 °C
Repetitive pulse avalanche energy
(V
DS
= 50 V, I
AR
= 6 A, f = 10 KHz,
T
J
= 25 °C, duty cycle = 50%)
Repetitive pulse avalanche energy
(V
DS
= 50 V, I
AR
= 6 A, f = 10 KHz,
T
J
= 110 °C, duty cycle = 50%)
1. Maximum rating value.
Value
6
112
17
5.5
STRH12P10
Electrical ratings
Unit
°C/W
°C/W mJ mJ
Unit
V
V
A
A
A
W
V/ns
°C
°C
Unit
A mJ
DS8699 - Rev 8 page 2/14
2
DS8699 - Rev 8
STRH12P10
Electrical characteristics
Electrical characteristics
For the P-channel MOSFET polarity of voltages and current has to be reversed.
Table 4. Electrical characteristics (T amb
= 25 °C unless otherwise specified)
Symbol
I
I
DSS
GSS
Parameter
Zero gate voltage drain current
Gate body leakage current
Test conditions
80% V
(BR)DSS
V
GS
= 16 V
V
GS
= -16 V
V
GS
= 16 V, T
C
= 125 °C
V
GS
= -16 V, T
C
= 125 °C t rr
Q rr
I
RRM t rr
Q rr
I
RRM
V
(BR)DSS
(1)
V
R
GS(th)
DS(on)
C iss
(2)
Drain-to-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1 mA
Gate threshold voltage V
DS
= V
GS
, I
D
= 1 mA, T
C
= 125 °C
V
DS
= V
GS
, I
D
= 1 mA, T
C
= -55 °C
Static drain-source on resistance
Input capacitance
V
GS
= 12 V, I
D
= 12 A
V
DS
= 25 V, f = 1 MHz, V
GS
= 0 V C oss
(2)
Output capacitance
C rss
(2)
Reverse transfer capacitance
Q g
Total gate charge
Q gs
Q gd t d(on)
Gate-to-source charge
Gate-to-drain (“Miller”) charge
Turn-on delay time t r t d(off) t f
I
SD
I
SDM
(3)
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
V
V
DD
DD
= 50 V, I
= 50 V, I
D
D
= 12 A, V
= 6 A, R
G
GS
= 12 V
= 4.7 Ω, V
GS
= 12 V
V
SD
Forward on voltage
I
SD
= 12 A, V
GS
= 0 V
I
SD
= 12 A, V
GS
= 0 V, T
C
= 125 °C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
SD
= 12 A, di/dt = 40 A/µs, V
DD
= 60 V,T
SD
= 12 A, di/dt = 40 A/µs, V
DD
= 60 V, T j
= 25 °C
J
= 150 °C
1. This rating is guaranteed at T
J
≤ 25 °C (see Figure 9. Normalized V
(BR)DSS
vs temperature ).
2. Not tested, guaranteed by process.
3. Pulse width limited by safe operating area
32
3.5
7
5
48
6.5
13
13
31
42
7
18
3.5
10.5
12 ns
A
48
1.5
A
V
1.25
178 258 ns
1700 2560 nC
14 24 A nC nC nC ns ns ns
225 335 ns
2650 3950 nC
18.5
28.5
A
Min.
Max.
Unit
10 µA
100
-100 nA
200
-200
100
2.0
1.6
V
4.5
3.8
V
2.2
5.2
0.30
Ω
940 1410 pF
135 205
55 85 pF pF page 3/14
3
3.1
STRH12P10
Single event effect
Radiation characteristics
This products is guaranteed in radiation as per ESCC 5205/029 and ESCC 22900 specification at 100 krad.
Each lot tested in radiation is accepted according to the characteristics as per
Table 5
.
Total dose radiation (TID) testing
•
•
•
•
The bias with VGS = + 15 V and VDS = 0 V is applied during irradiation exposure.
The parameters listed in Table 5 are measured:
Before irradiation
After irradiation
After 24 hrs at room temperature after 168 hrs at 100 °C anneal
Symbol
I
DSS
I
GSS
Table 5. Post-irradiation electrical characteristics (T amb
= 25 °C unless otherwise specified)
Parameter
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
V
(BR)DSS
V
GS(th)
R
DS(on)
Q g
Q gs
Q gd
V
DS
(1)
Drain-to-source breakdown voltage
Gate threshold voltage
Static drain-source on resistance
Total gate charge
Gate-to-source charge
Gate-to-drain charge
Forward on voltage
1. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Test conditions
80% V
(BR)DSS
V
GS
= 12 V
V
GS
= -12 V
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 10 V, I
D
= 12 A
V
DS
V, I
DS
= 50 V, I
G
= 12A
= 1 mA, V
GS
= 12
V
GS
= 0 V, I
SD
= 12 A
Drift values Δ
+1
1.5
-1.5
+5%
+ 150%
-4% / +35%
-15% / +5%
-5% / +200%
-10% / +100%
±5%
Unit
µA nA nC
V
V
V
Ω
DS8699 - Rev 8 page 4/14
3.2
STRH12P10
Single event effect RBSOA
Single event effect SOA
This products is extremely resistant to heavy ion environment for single event effect (as per MIL-STD-750E, method 1080, bias circuit of
Figure 2
).
SEB and SEGR tests are performed with a fluence of 3e+5 ions/cm² with the following acceptance criteria:
•
•
SEB (test): drain voltage checked, trigger level is set to V
DS
= - 5 V. Stop condition: as soon as a SEB occurs or if the fluence reaches 3e+5 ions/cm².
SEGR test: the gate current is monitored every 200 ms. A gate stress is performed before and after irradiation. Stop condition: as soon as the gate current reaches 100 nA (during irradiation or during PIGS test) or if the fluence reaches 3e+5 ions/cm².
Ion
Kr
Cu
Xe
Table 6. Single event effect (SEE), safe operating area (SOA)
Let (Mev/(mg/cm 2 )
32
28
60
Energy
(MeV)
768
756
285
1217
Figure 1. Single event effect, SOA
Range
(μm)
94
92
43
89
DS8699 - Rev 8
Figure 2. Single event effect, bias circuit
V gs
R4
270 Ω
R3
270 Ω
C4
820 pF
U2
C5
220 nF
C6
4.7 µF
V ds
AM09224v1 page 5/14
4
STRH12P10
Electrical characteristics (curves)
Electrical characteristics (curves)
I D
(A)
Figure 3. Safe operating area
AM16049v1
10.00
1.00
0.10
0.1
100µs
1
DS(on)
this area is
by max R
Tj=150°C
Tc=25°C
Single pulse
10 100 V DS (V)
1ms
10ms
Figure 5. Output characteristics
Figure 4. Thermal impedance
Figure 6. Transfer characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
DS8699 - Rev 8 page 6/14
Figure 9. Normalized V
(BR)DSS
vs temperature
STRH12P10
Electrical characteristics (curves)
Figure 10. Static drain-source on-resistance
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on-resistance vs temperature
Figure 13. Source drain-diode forward characteristics
DS8699 - Rev 8 page 7/14
5
Test circuits
Figure 14. Switching times test circuit for resistive load
STRH12P10
Test circuits
Note: Max driver V
GS
slope = 1V/ns (no DUT)
Figure 15. Source drain diode waveform
I
FM body diode forward current di/dt
Body diode reverse current, I
RM t rr
10[%] of I
RM a b
AM092225V1
Figure 16. Unclamped inductive load test circuit (single pulse and repetitive)
DS8699 - Rev 8 page 8/14
6
6.1
STRH12P10
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-257AA package information
Figure 17. TO-257AA package outline
DS8699 - Rev 8
3
2
1
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
0117268_E page 9/14
Note:
STRH12P10
TO-257AA package information
Symbols
D
D1
D2 e
E
L
L1
P
A
A1
A2 b b1
The case is not connected to any lead.
0.64
0.64
16.38
10.41
-
Min.
4.83
0.89
Table 7. TO-257AA package mechanical data
Dimensions (mm)
Typ.
Max.
5.08
1.14
Min.
0.190
0.035
Dimensions (inches)
Typ.
3.05
0.120
0.76
-
2.54
1.02
0.89
16.89
10.92
0.97
0.025
0.025
0.645
0.410
0.030
0.100
10.41
15.24
13.39
3.56
10.67
16.51
13.64
3.81
0.410
0.600
0.527
0.140
Max.
0.200
0.045
0.040
0.035
0.665
0.430
0.038
0.420
0.650
0.537
0.150
DS8699 - Rev 8 page 10/14
7
STRH12P10
Order codes
Order codes
Table 8. Ordering information
Part number
STRH12P10GY1
STRH12P10GYG
Agency specification
Quality level
5205/029/01
STRH12P10GYT 5205/029/02
Engineering model
ESCC flight
Radiation level
-
100 krad
100 krad
Package Weight
TO-257AA 5 g
Lead finish
Gold
Solder dip
Marking (1)
STRH12P10GY1
+ BeO
520502901R
+ BeO
520502902R
+ BeO
Packing
Strip pack
1. Specific marking only. The full marking includes in addition: For the Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: STlogo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot.
Contact ST sales office for information about the specific conditions for products in die form.
DS8699 - Rev 8 page 11/14
8
8.1
8.2
Other information
Traceability information
Date code information is described in the table below.
Table 9. Date codes
Model
EM
ESCC
1. yy = year, ww = week number, N = lot index in the week.
Date code
3yywwN yywwN
Documentation
Quality level
Engineering model
ESCC
Table 10. Documentation provided for each type of product
Radiation level
-
100 krad
Documentation
Certificate of conformance
Certificate of conformance
ESCC qualification maintenance lot reference
Radiation data at 25 / 50 / 70 / 100 krad at 0.1 rad / s.
STRH12P10
Other information
DS8699 - Rev 8 page 12/14
STRH12P10
Revision history
Date
07-Oct-2011
24-Jun-2013
25-Nov-2013
18-Dec-2013
19-Jan-2015
02-May-2019
29-Feb-2020
21-Jan-2021
2
3
4
5
6
7
8
Table 11. Document revision history
Version
1
Changes
First release.
Document status promoted form preliminary data to production data.
– Modified: Figure 1
– Modified: EAS, EAR parameter and values in Table 4
– Modified: IGSS, and added note 1 in Table 5
– Added: note 1 in Table 6
– Modified: trr, qrr and IRRM parameter in Table 8
– Modified: RDS(on) test conditions in Table 9, the entire test conditions in
Table 10
– Modified: Figure 4
– Modified: package drawing and Figure 1.
– Updated Table 1: Device summary and Table 14: Ordering information.
– Updated Section : Total dose radiation (TID) testing.
– Updated Table 13.: TO-257AA mechanical data
– Minor text changes
Updated Table 7. Pre-irradation source drain diode and Table 4. Preirradiation on/off states.
Minor text changes
Updated Table 10 and TO-257 AA package information.
Updated Product summary, Table 4 ,
Table 5
,
Table 6 , Figure 1
,
Table 8 and
Table 10
.
DS8699 - Rev 8 page 13/14
STRH12P10
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DS8699 - Rev 8 page 14/14
