STS9P3LLH6
Datasheet
P-channel -30 V, 12 mΩ typ., -9 A, STripFET H6 Power MOSFET in an SO-8 package
G(4)
8
5
1
SO-8
4
D(5, 6, 7, 8)
S(1, 2, 3)
AM01475v4
Features
Order code
STS9P3LLH6
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
V
DS
-30 V
R
DS(on)
max.
15 mΩ
I
D
-9 A
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R
DS(on)
in all packages.
Product status link
STS9P3LLH6
Product summary
Order code STS9P3LLH6
Marking
Package
Packing
9K3L
SO-8
Tape and reel
DS10146 - Rev 3 - February 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
STS9P3LLH6
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DS
V
GS
Drain-source voltage
Gate-source voltage
Parameter
I
D
(1)
Drain current (continuous) at T amb
= 25°C
Drain current (continuous) at T amb
= 100°C
Drain current (pulsed) I
DM
(2)
P
TOT
(1)
T stg
T
J
Total power dissipation at T
Storage temperature range amb
= 25°C
Operating junction temperature range
1. This value is rated according to R thJA
.
2. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol
R thJA
(1)
Parameter
Thermal resistance, junction-to-ambient
1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 s.
Value
-30
±20
-9
-5.6
-36
2.7
-55 to 150
Unit
V
V
A
A
W
°C
°C
Value
47
Unit
°C/W
DS10146 - Rev 3 page 2/13
2
DS10146 - Rev 3
STS9P3LLH6
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified.
Table 3. On/off states
Symbol
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0, I
D
= -1 mA
V
GS
= 0, V
DS
= -30 V
Zero gate voltage drain current
V
GS
= 0, V
DS
= -30 V, T
C
= 125 °C
(1)
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
V
DS
= 0, V
GS
= ±20 V
V
DS
= V
GS
, I
D
= -250 µA
V
GS
= -10 V, I
D
= -4.5 A
V
GS
= -4.5 V, I
D
= -4.5 A
1. Defined by design, not subject to production test.
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Min.
Typ.
Max.
Unit
-30 V
-1
-10
µA
µA
-1
-100
-2 nA
V
12 15 mΩ
18.0
22.5
mΩ
V
Table 4. Dynamic
DS
Test conditions
= -25 V, f = 1 MHz, V
GS
= 0 V
V
DD
= -15 V I
D
= -9 A, V
GS
= -4.5 V
(see
Figure 13. Gate charge test circuit
)
-
-
-
-
Min.
Typ.
Max.
Unit
2615 pF
340 pF
235
24
9
8
-
-
-
pF nC nC nC
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 5. Switching times
Test conditions
V
DD
= -15 V, I
D
= -4.5 A,
R
G
= 4.7 Ω, V
GS
= -10 V
(see
Figure 12. Switching times test circuit for resistive load )
Min.
Typ.
Max.
Unit
13.2
ns
-
-
-
93
50
18
-
-
ns ns ns
Table 6. Source drain diode
Symbol
V
SD
(1)
t rr
I
Q rr
RRM
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Test conditions
I
SD
= -4.5 A, V
GS
= 0
V
DD
= -24 V, T
J
= 150 °C,
I
SD
= -4.5 A, di/dt = 100 A/µs
(see
Figure 14. Test circuit for inductive load switching and diode recovery times )
Min.
Typ.
Max.
Unit
-1.1
V
-
20
16 ns nC
-1.6
A page 3/13
STS9P3LLH6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
I
D
(A)
GIPG0903166B3PSSOA
Operation in this area is limited by R
DS(on)
10 1
10 0
10 -1
10 -1
T j
T c
≤150 °C
= 25°C single pulse
10 0 10 1
100
80
60
40
120
Figure 3. Output characteristics
I
D
(A)
V
GS
= 7,8,9,10 V
140
GIPG180320161003OCH
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4 V
V
GS
= 3 V
20
0
0 1 2 3 4 V
DS
(V) t p
=10 ms t p
=100 µs t p
=1 s
V
DS
(V)
6
4
2
0
0
Figure 5. Gate charge vs gate-source voltage
V
GS
(V)
GIPG1503166B3PDQVG
10
V
DD
= 15 V
I
D
= 9 A
8
10 20 30 40 50 Q g
(nC)
K
Figure 2. Thermal impedance
GIPG0903166B3PSZTH
10 -1
10 -2
0.05
10 -3
10 -4 10 -3 10 -2 10 -1 10 0 t p
(s)
Figure 4. Transfer characteristics
80
60
40
I
D
(A)
140
120
100
V
DS
=5 V
GIPG180320161101TCH
20
0
0 1 2 3 4 5 6 7 V
GS
(V)
Figure 6. Static drain-source on-resistance
R
DS(on)
(mΩ)
GIPG0903166B3P9RID
14
V
GS
=10 V
13
12
11
10
9
10 15 20 25 30 35 40 I
D
(A)
DS10146 - Rev 3 page 4/13
STS9P3LLH6
Electrical characteristics (curves)
Note:
C
(pF)
Figure 7. Capacitance variations
GIPG0903166B3PDCVR
C
ISS
10 3 f = 1 MHz
C
OSS
C
RSS
10 2
0 5 10 15 20 25 30 V
DS
(V)
Figure 9. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GIPG1003166B3PDRON
1.50
V
GS
= 10 V
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150 I
D
(A)
Figure 8. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
GIPG0903166B3PDVTH
1.1
I
D
= 250 µA
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T j
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
GIPG0903166B3PDBDV
1.08
I
D
= 1 mA
1.04
1.00
0.96
0.92
-75 -25 25 75 125 T j
(°C)
Figure 11. Source-drain diode forward characteristics
V
SD
(V)
1.0
GIPG0903166B3PDSDF
T j
= -55 °C
0.9
T j
= 25 °C
0.8
0.7
0.6
0.5
0.4
2 4 6 8
T j
= 175 °C
10 12 I
SD
(A)
For the P-channel Power MOSFET, current and voltage polarities are reversed.
DS10146 - Rev 3 page 5/13
STS9P3LLH6
Test circuits
3
Test circuits
Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load switching and diode recovery times
DS10146 - Rev 3 page 6/13
4
4.1
STS9P3LLH6
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
SO-8 package information
Figure 15. SO-8 package outline
DS10146 - Rev 3
0016023_So-807_fig2_Rev10 page 7/13
DS10146 - Rev 3
STS9P3LLH6
SO-8 package information
Dim.
c c1
D
E
E1
A
A1
A2 b b1
L1
L2 k ccc e h
L
Table 7. SO-8 mechanical data
Min.
mm
Typ.
0.10
0.10
4.80
5.80
3.80
0.10
1.25
0.31
0.28
0.25
0.40
4.90
6.00
3.90
1.27
1.04
0.25
0°
Figure 16. SO-8 recommended footprint (dimensions are in mm)
Max.
1.75
0.25
0.51
0.48
0.25
0.23
5.00
6.20
4.00
0.50
1.27
8°
0.10
0016023_So-807_footprint_Rev10 page 8/13
4.2
SO-8 packing information
Figure 17. SO-8 tape and reel dimensions
STS9P3LLH6
SO-8 packing information
A D N
Bo
Ko
T
Po
Ao P
Figure 18. Tape orientation
0016023_SO-8_O7_T_R
DS10146 - Rev 3 page 9/13
Dim.
Ao
Bo
Ko
Po
P
A
C
D
N
T
STS9P3LLH6
SO-8 packing information
Table 8. SO-8 tape and reel mechanical data
Min.
mm
Typ.
12.8
20.2
60
6.5
5.4
2.0
3.9
7.9
-
Max.
330
13.2
22.4
6.7
5.6
2.2
4.1
8.1
DS10146 - Rev 3 page 10/13
STS9P3LLH6
Revision history
Date
22-Jan-2014
15-Mar-2016
17-Feb-2021
Revision
1
2
3
Table 9. Document revision history
Changes
Initial release.
Modified: title and R
DS(on)
max value in cover page.
Modified: Table 4: "On/off states" , Table 5: "Dynamic" , Table 6: "Switching times" and Table 7:
"Source drain diode" .
Minor text changes.
Updated Internal schematic .
Updated Section 4.2 SO-8 packing information .
Minor text changes.
DS10146 - Rev 3 page 11/13
STS9P3LLH6
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4.1
SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.2
SO-8 packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
DS10146 - Rev 3 page 12/13
STS9P3LLH6
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DS10146 - Rev 3 page 13/13
