STGW8M120DF3,
STGWA8M120DF3
Trench gate field-stop IGBT, M series 1200 V, 8 A low-loss
Datasheet - production data
Features
10 µs of short-circuit withstand time
V
CE(sat)
= 1.85 V (typ.) @ I
C
= 8 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Industrial drives
UPS
Solar
Welding
Figure 1: Internal schematic diagram
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series
IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V
CE(sat)
temperature coefficient and tight parameter distribution result in safer paralleling operation.
Table 1: Device summary
Order code Marking Package Packing
STGW8M120DF3
STGWA8M120DF3
G8M120DF3
TO-247
TO-247 long leads
Tube
October 2017 DocID029337 Rev 3
This is information on a product in full production.
1/17 www.st.com
Contents
Contents
STGW8M120DF3, STGWA8M120DF3
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ................................................................................... 11
4 Package information ..................................................................... 12
4.1
4.2
TO-247 package information ........................................................... 12
TO-247 long leads package information ......................................... 14
5 Revision history ............................................................................ 16
2/17 DocID029337 Rev 3
STGW8M120DF3, STGWA8M120DF3
1 Electrical ratings
Symbol
I
F
I
F
I
FP
(1)
P
TOT
T
STG
T
J
V
CES
I
C
I
C
I
CP
(1)
V
GE
Table 2: Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width limited by maximum junction temperature.
Symbol
Table 3: Thermal data
Parameter
R thJC
R thJC
R thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Electrical ratings
Value
1200
16
8
32
±20
16
8
32
167
-55 to 150
-55 to 175
Unit
A
A
A
W
°C
°C
V
A
A
A
V
Value
0.9
1.47
50
Unit
°C/W
°C/W
°C/W
DocID029337 Rev 3 3/17
Electrical characteristics
2 Electrical characteristics
STGW8M120DF3, STGWA8M120DF3
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 4: Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
V
GE
= 0 V, I
C
= 2 mA
V
CE(sat)
V
F
Collector-emitter saturation voltage
Forward on-voltage
V
GE(th)
Gate threshold voltage
I
CES
Collector cut-off current
I
GES
V
GE
= 15 V, I
C
= 8 A
V
GE
= 15 V, I
C
= 8 A,
T
J
= 125 °C
V
GE
= 15 V, I
C
= 8 A,
T
J
= 175 °C
I
F
= 8 A
I
F
= 8 A, T
J
= 125 °C
I
F
= 8 A, T
J
= 175 °C
V
V
CE
GE
= V
GE
, I
= 0 V, V
C
= 500 µA
CE
= 1200 V
Gate-emitter leakage current V
GE
= ±20 V, V
CE
= 0 V
Symbol Parameter
Table 5: Dynamic characteristics
Test conditions
C ies
C oes
C res
Q g
Q ge
Q gc
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
V
CC
= 960 V, I
C
= 8 A,
V
GE
= 0 to 15 V
(see Figure 30: " Gate charge test circuit" )
Min. Typ. Max. Unit
1200
1.85 2.3
2.1
5
V
V
2.2
2.4 3.35
1.75
1.55
6 7
25
V
±250 nA
V
µA
Min. Typ. Max. Unit
-
-
-
-
-
-
542
74.4
21
32
4.5
18.5
-
-
-
-
-
- pF nC
4/17 DocID029337 Rev 3
STGW8M120DF3, STGWA8M120DF3 Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t sc
Short-circuit withstand time
V
CE
= 600 V, I
C
= 8 A,
V
GE
= 15 V, R
G
= 33
Ω
(see Figure 29: " Test circuit for inductive load switching" )
V
CE
= 600 V, I
C
= 8 A,
V
GE
= 15 V, R
G
=
33 Ω,
T
J
= 175 °C
(see Figure 29: " Test circuit for inductive load switching" )
V
CC
≤ 600 V, V
GE
= 15 V,
T
Jstart
≤ 150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
19
9.8
656
134
222
0.66
0.58
1.24
20
8.4
800
126
136
0.39
0.37
0.76
- ns ns
A/µs ns ns mJ mJ mJ ns ns
A/µs ns ns mJ mJ mJ
µs
Notes:
(1)
Including the reverse recovery of the diode
(2)
Including the tail of the collector current
Symbol
Table 7: Diode switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit t rr
Q rr
I rrm dI rr
/dt
E rr t rr
Q rr
I rrm dI rr
/dt
E rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
I
F
= 8 A, V
R
= 600 V,
V
GE
= 15 V, R
G
= 33 Ω
(di/dt = 1000 A/µs)
(see Figure 29: " Test circuit for inductive load switching" )
I
F
= 8 A, V
R
= 600 V,
V
GE
= 15 V, T
J
= 175 °C,
R
G
= 33 Ω (di/dt = 840 A/µs)
(see Figure 29: " Test circuit for inductive load switching" )
-
-
-
-
-
-
-
-
-
-
103
0.87
19.2
720
211
280
1.9
21.8
450
404
-
-
-
-
-
-
-
-
-
- ns
µC
A
A/µs
µJ ns
µC
A
A/µs
µJ
DocID029337 Rev 3 5/17
Electrical characteristics
2.1 Electrical characteristics (curves)
STGW8M120DF3, STGWA8M120DF3
Figure 2: Power dissipation vs case temperature Figure 3: Collector current vs case temperature
Figure 4: Output characteristics (T
J
= 25 °C) Figure 5: Output characteristics (T
J
= 175 °C)
Figure 6: V
CE(sat)
vs junction temperature Figure 7: V
CE(sat)
vs collector current
6/17 DocID029337 Rev 3
STGW8M120DF3, STGWA8M120DF3
Figure 8: Collector current vs switching frequency
Electrical characteristics
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics Figure 11: Diode V
F
vs forward current
Figure 12: Normalized V
GE(th)
vs junction temperature
Figure 13: Normalized V
(BR)CES
vs junction temperature
DocID029337 Rev 3 7/17
Electrical characteristics
Figure 14: Capacitance variations
STGW8M120DF3, STGWA8M120DF3
Figure 15: Gate charge vs gate-emitter voltage
Figure 16: Switching energy vs collector current Figure 17: Switching energy vs gate resistance
Figure 18: Switching energy vs temperature Figure 19: Switching energy vs collector emitter voltage
8/17 DocID029337 Rev 3
STGW8M120DF3, STGWA8M120DF3
Figure 20: Short-circuit time and current vs V
GE
Electrical characteristics
Figure 21: Switching times vs collector current
Figure 22: Switching times vs gate resistance Figure 23: Reverse recovery current vs diode current slope
Figure 24: Reverse recovery time vs diode current slope
Figure 25: Reverse recovery charge vs diode current slope
DocID029337 Rev 3 9/17
Electrical characteristics STGW8M120DF3, STGWA8M120DF3
Figure 26: Reverse recovery energy vs diode current slope
Figure 27: Thermal impedance for IGBT
Figure 28: Thermal impedance for diode
10/17 DocID029337 Rev 3
STGW8M120DF3, STGWA8M120DF3
3 Test circuits
Figure 29: Test circuit for inductive load switching
G
C
A
E
B
A
L=100 µH
B
G
C
E
D.U.T
3.3
µF
+
-
R
G
1000
µF
V
CC
Test circuits
Figure 30: Gate charge test circuit
AM01504v 1
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
DocID029337 Rev 3 11/17
Package information
4
4.1
Package information
STGW8M120DF3, STGWA8M120DF3
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
TO-247 package information
Figure 33: TO-247 package outline
12/17 DocID029337 Rev 3
STGW8M120DF3, STGWA8M120DF3
Table 8: TO-247 package mechanical data mm
Dim.
Min. Typ. e
L
L1
L2
ØP
ØR
S b2 c
D
E
A
A1 b b1
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
5.45
18.50
5.50
Package information
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DocID029337 Rev 3 13/17
Package information
4.2
STGW8M120DF3, STGWA8M120DF3
TO-247 long leads package information
Figure 34: TO-247 long leads package outline
14/17 DocID029337 Rev 3
STGW8M120DF3, STGWA8M120DF3 Package information
Table 9: TO-247 long leads package mechanical data mm
Dim.
Min. Typ. Max.
E
E2
E3 e
L
L1
P
Q
S b2 b3 c
D
A
A1
A2 b
4.90
2.31
1.90
1.16
0.59
20.90
15.70
4.90
2.40
5.34
19.80
3.50
5.60
6.05
5.00
2.41
2.00
21.00
15.80
5.00
2.50
5.44
19.92
3.60
6.15
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
DocID029337 Rev 3 15/17
Revision history
5
STGW8M120DF3, STGWA8M120DF3
Revision history
Date Revision
Table 10: Document revision history
Changes
11-May-2016
19-Sep-2016
31-Oct-2017
1
2
3
First release.
Datasheet promoted from preliminary to production data.
Updated Table 2: "Absolute maximum ratings" .
Updated Section 2: "Electrical characteristics" .
Added Section 2.1: "Electrical characteristics (curves)" .
Updated package silhouette on cover page.
Updated Table 4: "Static characteristics" and Table 5: "Dynamic characteristics" .
Minor text changes
16/17 DocID029337 Rev 3
STGW8M120DF3, STGWA8M120DF3
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DocID029337 Rev 3 17/17
