STGYA120M65DF2
Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package
Datasheet - production data
Features
6 µs of short-circuit withstand time
V
CE(sat)
= 1.65 V (typ.) @ I
C
= 120 A
Tight parameter distribution
Safer paralleling
Positive V
CE(sat)
temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: T
J
= 175 °C
Figure 1: Internal schematic diagram
Order code
STGYA120M65DF2
Applications
Motor control
UPS
PFC
General purpose inverter
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series
IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V
CE(sat)
temperature coefficient and tight parameter distribution result in safer paralleling operation.
Table 1: Device summary
Marking Package Packing
G120M65DF2 Max247 long leads Tube
September 2017 DocID029193 Rev 5
This is information on a product in full production.
1/17 www.st.com
Contents
Contents
STGYA120M65DF2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ................................................................................... 12
4 Package information ..................................................................... 13
4.1
Max247 long leads package information ......................................... 14
5 Revision history ............................................................................ 16
2/17 DocID029193 Rev 5
STGYA120M65DF2
1 Electrical ratings
Symbol
V
CES
I
C
(1)
I
C
I
CP
(2)
V
GE
I
F
(1)
I
F
I
FP
(2)
P
TOT
T
STG
T
J
Table 2: Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Current level is limited by bond wires.
(2)
Pulse width limited by maximum junction temperature.
Symbol
Table 3: Thermal data
Parameter
R thJC
R thJC
R thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Electrical ratings
Value
650
160
120
360
± 20
160
120
360
625
- 55 to 150
- 55 to 175
Unit
V
A
A
V
A
A
W
°C
Value
0.24
0.6
50
Unit
°C/W
DocID029193 Rev 5 3/17
Electrical characteristics
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 4: Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
V
GE
= 0 V, I
C
= 250 µA
V
CE(sat)
V
F
Collector-emitter saturation voltage
Forward on-voltage
V
GE
= 15 V, I
C
= 120 A
V
GE
= 15 V, I
C
= 120 A,
T
J
= 125 °C
V
GE
= 15 V, I
C
= 120 A,
T
J
= 175 °C
I
F
= 120 A
I
F
= 120 A, T
J
= 125 °C
V
GE(th)
Gate threshold voltage
I
CES
Collector cut-off current
I
F
= 120 A, T
J
= 175 °C
V
CE
= V
GE
, I
C
= 2 mA
V
GE
= 0 V, V
CE
= 650 V
I
GES
Gate-emitter leakage current V
CE
= 0 V, V
GE
= ± 20 V
Symbol
C ies
C oes
C
Q
Q
Q res g ge gc
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Table 5: Dynamic characteristics
Test conditions
V
V
V
V
CE
GE
CC
GE
= 25 V, f = 1 MHz,
= 0 V
= 520 V, I
C
= 120 A,
= 0 to 15 V (see Figure
30: " Gate charge test circuit" )
STGYA120M65DF2
Min. Typ. Max. Unit
5
650
1.65 2.15
1.95
2.1
1.9
1.7
1.6
6
V
V
2.6
±
250
V
7 V
100 µA
µA
Min. Typ. Max. Unit
- 11
- 0.61
-
- nF
- 0.25 -
-
-
-
420
90
160
-
-
- nC
4/17 DocID029193 Rev 5
STGYA120M65DF2 Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit Symbol t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t sc
Short-circuit withstand time
V
CE
= 400 V, I
C
= 120 A,
V
GE
= 15 V, R
G
= 4.7
Ω
(see Figure 29: " Test circuit for inductive load switching" )
V
CE
= 400 V, I
C
= 120 A,
V
GE
= 15 V, R
G
= 4.7
Ω
T
J
= 175 °C (see Figure 29: "
Test circuit for inductive load switching" )
V
CC
≤ 400 V, V
GE
= 13 V,
T
Jstart
= 150 °C
V
CC
≤ 400 V, V
GE
= 15 V,
T
Jstart
= 150 °C
10
6
62
48
2016
187
164
4.4
6.0
10.4
66
38
2500
185
85
1.8
4.41
6.21
-
-
µs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- ns ns
A/µs ns ns mJ mJ mJ ns ns
A/µs ns ns mJ mJ mJ
Notes:
(1)
Including the reverse recovery of the diode.
(2)
Including the tail of the collector current.
Symbol
Table 7: Diode switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit t rr
Q rr
I rrm dI rr
/dt
E rr t rr
Q rr
I rrm dI rr
/dt
E rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
I
F
= 120 A, V
R
= 400 V,
V
GE
= 15 V, di/dt = 1000 A/µs
(see Figure 29: " Test circuit for inductive load switching" )
I
F
= 120 A, V
R
= 400 V,
V
GE
= 15 V , di/dt = 1000 A/µs,
T
J
= 175 °C
(see Figure 29: " Test circuit for inductive load switching" )
-
-
-
-
-
-
-
-
-
202
2.9
32.5
500
500
320
11.2
62
270
- 1710
-
-
-
-
-
-
-
-
-
- ns
µC
A
A/µs
µJ ns
µC
A
A/µs
µJ
DocID029193 Rev 5 5/17
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
STGYA120M65DF2
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (T
J
= 25 °C) Figure 5: Output characteristics (T
J
= 175 °C)
6/17
Figure 6: V
CE(sat)
vs. junction temperature Figure 7: V
CE(sat)
vs. collector current
DocID029193 Rev 5
STGYA120M65DF2
Figure 8: Collector current vs. switching frequency
Electrical characteristics
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics Figure 11: Diode V
F
vs. forward current
Figure 12: Normalized V
GE(th)
vs. junction temperature
Figure 13: Normalized V
(BR)CES
vs. junction temperature
7/17 DocID029193 Rev 5
Electrical characteristics
Figure 14: Capacitance variations
STGYA120M65DF2
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature
Figure 19: Switching energy vs. collector emitter voltage
8/17 DocID029193 Rev 5
STGYA120M65DF2
Figure 20: Short circuit time and current vs. V
GE
Electrical characteristics
Figure 21: Switching times vs. collector current
Figure 22: Switching times vs. gate resistance
Figure 23: Reverse recovery current vs. diode current slope
Figure 24: Reverse recovery time vs. diode current slope
Figure 25: Reverse recovery charge vs. diode current slope
DocID029193 Rev 5 9/17
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
STGYA120M65DF2
10/17 DocID029193 Rev 5
STGYA120M65DF2
Figure 27: Thermal impedance for IGBT
Electrical characteristics
Figure 28: Thermal impedance for diode
DocID029193 Rev 5 11/17
Test circuits
3 Test circuits
Figure 29: Test circuit for inductive load switching
G
C
A A
E
B
L=100 µH
B
G
C
E
D.U.T
+
-
R
G
3.3
µF
1000
µF
V
CC
STGYA120M65DF2
Figure 30: Gate charge test circuit
AM01504v 1
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
12/17 DocID029193 Rev 5
STGYA120M65DF2
4 Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID029193 Rev 5 13/17
Package information
4.1 Max247 long leads package information
Figure 33: Max247 long leads package outline
STGYA120M65DF2
Section C-C, D-D, E-E
14/17 DocID029193 Rev 5
DM00176969_Rev_A
STGYA120M65DF2
Dim.
R
T
U
L
L1
M
P
D
D1
D2
D3
E
E1
E3 e b3 b4 b5 b6 b7 c c1 a' b b1 b2
A
A1
A2 a
Package information
Table 8: Max247 long leads package mechanical data mm
Min. Typ. Max.
0.59
0.58
20.90
16.25
1.05
0.75
15.70
13.10
1.35
5.34
19.80
0.70
2.40
1.90
9.80
6.00
4.90
2.31
1.90
0
0
1.16
1.15
1.96
1.95
2.96
2.95
5.00
2.41
2.00
1.20
2.00
3.00
0.60
21.00
16.55
1.17
1.00
15.80
13.26
1.45
5.44
19.92
2.50
2.00
20.10
4.30
1.30
2.60
2.10
10.20
6.40
21.10
16.85
1.35
1.25
15.90
13.50
1.55
5.54
2.02
3.06
3.02
2.25
3.25
0.66
0.62
5.10
2.51
2.10
0.15
0.15
1.26
1.22
2.06
15/17 DocID029193 Rev 5
Revision history
5
STGYA120M65DF2
Revision history
Date Revision
Table 9: Document revision history
Changes
06-Apr-2016
10-May-2016
15-Jun-2016
12-Aug-2016
13-Sep-2017
1
2
3
4
5
First release.
Document status promoted to production data.
Added Section 2.1: "Electrical characteristics (curves)"
Updated Figure 1: "Internal schematic diagram" and Table 2: "Absolute maximum ratings".
Updated Section 2.1: "Electrical characteristics (curves)".
Minor text changes.
Updated Table 7: "Diode switching characteristics (inductive load)" and
Figure 25: Reverse recovery charge vs. diode current slope” .
Minor text changes.
Updated title, features and application in cover page.
Updated Figure 13: "Normalized V(BR)CES vs. junction temperature" .
Minor text changes.
16/17 DocID029193 Rev 5
STGYA120M65DF2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries
(“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing o rders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics
– All rights reserved
DocID029193 Rev 5 17/17
