STGF4M65DF2
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Datasheet - production data
TO-220FP
Figure 1: Internal schematic diagram
C (2)
G (1)
Features
6 µs of short-circuit withstand time
V
CE(sat)
= 1.6 V (typ.) @ I
C
= 4 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series
IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V
CE(sat)
temperature coefficient and tight parameter distribution result in safer paralleling operation.
Sc12850_no_tab
E (3)
Order code
STGF4M65DF2
Table 1: Device summary
Marking
G4M65DF2
Package
TO-220FP
Packing
Tube
November 2016 DocID028678 Rev 4
This is information on a product in full production.
1/16 www.st.com
Contents
Contents
STGF4M65DF2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ................................................................................... 11
4 Package information ..................................................................... 12
4.1
TO-220FP package information ...................................................... 13
5 Revision history ............................................................................ 15
2/16 DocID028678 Rev 4
STGF4M65DF2
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
CES
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C
I
C
(1)
Continuous collector current at T
C
= 100 °C
I
CP
(2)
Pulsed collector current
V
GE
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
I
F
(1)
Continuous forward current at T
C
= 100 °C
I
FP
(2)
Pulsed forward current
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s, TC= 25 °C)
P
TOT
Total dissipation at T
C
= 25 °C
T
STG
Storage temperature range
T
J
Operating junction temperature range
Notes:
(1)
Limited by maximum junction temperature.
(2)
Pulse width limited by maximum junction temperature.
Symbol
Table 3: Thermal data
Parameter
R thJC
R thJC
R thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Electrical ratings
Value
650
8
4
16
±20
8
4
16
2.5
23
- 55 to 150
- 55 to 175 kV
W
°C
°C
Unit
V
A
A
A
V
A
A
A
Value
6.5
7
62.5
Unit
°C/W
°C/W
°C/W
DocID028678 Rev 4 3/16
Electrical characteristics
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 4: Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
V
GE
= 0 V, I
C
= 250 µA
V
CE(sat)
V
F
Collector-emitter saturation voltage
Forward on-voltage
V
GE(th)
Gate threshold voltage
I
CES
Collector cut-off current
I
GES
V
GE
= 15 V, I
C
= 4 A
V
GE
= 15 V, I
C
= 4 A,
T
J
= 125 °C
V
GE
= 15 V, I
C
= 4 A,
T
J
= 175 °C
I
F
= 4 A
I
F
= 4 A, T
J
= 125 °C
I
F
= 4 A, T
J
= 175 °C
V
V
CE
GE
= V
GE
, I
= 0 V, V
C
= 250 µA
CE
= 650 V
Gate-emitter leakage current V
CE
= 0 V, V
GE
= ± 20 V
Symbol Parameter
Table 5: Dynamic characteristics
Test conditions
C ies
C oes
C res
Q g
Q ge
Q gc
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
V
CC
= 520 V, I
C
= 4 A,
V
GE
= 15 V
(see Figure 30: " Gate charge test circuit" )
STGF4M65DF2
Min. Typ. Max. Unit
5
650
1.6 2.1
V
1.9
V
2.1
1.9
1.7
1.6
6 7
25
V
V
µA
±250 µA
Min. Typ. Max. Unit
-
-
-
-
-
-
369
24.8
8
15.2
3
7
-
-
-
-
-
- pF nC
4/16 DocID028678 Rev 4
STGF4M65DF2 Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit Symbol t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t sc
Short-circuit withstand time
V
CE
= 400 V, I
C
= 4 A,
V
GE
= 15 V, R
G
= 47
Ω
(see Figure 29: " Test circuit for inductive load switching" )
V
CE
= 400 V, I
C
= 4 A,
V
GE
= 15 V, R
G
= 47
Ω,
T
J
= 175 °C
(see Figure 29: " Test circuit for inductive load switching" )
V
CC
≤ 400 V, V
GE
= 15 V,
T
Jstart
= 150 °C
V
CC
≤ 400 V, V
GE
= 13 V,
T
Jstart
= 150 °C
12
6.9
480
86
120
0.040 -
0.136 -
-
-
0.176 -
-
-
-
11.6
8
410
85
211
0.067 -
0.210 -
-
-
-
-
-
0.277 -
6
10
-
-
µs
µs ns ns
A/µs ns ns mJ mJ mJ ns ns
A/µs ns ns mJ mJ mJ
Notes:
(1)
Including the reverse recovery of the diode.
(2)
Including the tail of the collector current.
Symbol
Table 7: Diode switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit t rr
Q rr
I rrm dI rr
/dt
E rr t rr
Q rr
I rrm dI rr
/dt
E rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
I
F
= 4 A, V
R
= 400 V,
V
GE
= 15 V, di/dt = 800 A/µs
(see Figure 29: " Test circuit for inductive load switching" )
I
F
= 4 A, V
R
= 400 V,
V
GE
= 15 V, T
J
= 175 °C, di/dt = 800 A/µs
(see Figure 29: " Test circuit for inductive load switching" )
-
-
-
-
-
-
-
-
-
-
133
140
5
520
15
236
370
6.6
378
32
-
-
-
-
-
-
-
-
-
- ns nC
A
A/µs
µJ ns nC
A
A/µs
µJ
DocID028678 Rev 4 5/16
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
STGF4M65DF2
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (T
J
= 25 °C) Figure 5: Output characteristics (T
J
= 175 °C)
Figure 6: V
CE(sat)
vs. junction temperature Figure 7: V
CE(sat)
vs. collector current
6/16 DocID028678 Rev 4
STGF4M65DF2
Figure 8: Collector current vs. switching frequency
Electrical characteristics
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics Figure 11: Diode V
F
vs. forward current
Figure 12: Normalized V
GE(th)
vs. junction temperature
Figure 13: Normalized V
(BR)CES
vs. junction temperature
DocID028678 Rev 4 7/16
Electrical characteristics
Figure 14: Capacitance variations
STGF4M65DF2
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current
Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage
8/16 DocID028678 Rev 4
STGF4M65DF2
Figure 20: Short-circuit time and current vs.
V
GE
Electrical characteristics
Figure 21: Switching times vs. collector current
Figure 22: Switching times vs. gate resistance
Figure 23: Reverse recovery current vs. diode current slope
Figure 24: Reverse recovery time vs. diode current slope
Figure 25: Reverse recovery charge vs. diode current slope
Q rr
(nC)
IGBT170320161123RRQ
V
CC
= 400 V, V
GE
= 15 V, I
F
= 4 A,
T j
= 175 °C
370
365
360
355
350
0 150 300 450 600 750 di/dt (A/µs)
DocID028678 Rev 4 9/16
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
STGF4M65DF2
Figure 27: Thermal impedance for IGBT
Figure 28: Thermal impedance for diode
10/16 DocID028678 Rev 4
STGF4M65DF2
3 Test circuits
Figure 29: Test circuit for inductive load switching
G
C
A A
E
B
L=100 µH
B
G
C
E
D.U.T
+
-
R
G
3.3
µF
1000
µF
V
CC
Test circuits
Figure 30: Gate charge test circuit
AM01504v 1
Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform di/dt
I
F
I
RRM
Q rr t s t rr t f
I
RRM
10%
V
RRM t dv/dt
AM01507v1
DocID028678 Rev 4 11/16
Package information
4 Package information
STGF4M65DF2
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
12/16 DocID028678 Rev 4
STGF4M65DF2
4.1 TO-220FP package information
Figure 33: TO-220FP package outline
Package information
DocID028678 Rev 4 13/16
Package information
Dim.
G1
H
L2
L3
L4
L5
L6
L7
Dia
F
F1
F2
G
A
B
D
E
Table 8: TO-220FP package mechanical data mm
Min. Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
STGF4M65DF2
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
14/16 DocID028678 Rev 4
STGF4M65DF2
5
Revision history
Revision history
Date Revision
Table 9: Document revision history
Changes
25-Nov-2015 1
18-Apr-2016
13-Jul-2016
21-Nov-2016
2
3
4
First release.
Modified: features in cover page.
Modified: Table 2: "Absolute maximum ratings" , Table 3: "Thermal data" , Table 4: "Static characteristics" , Table 5: "Dynamic characteristics" , Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)"
Added: Section 2.1: "Electrical characteristics (curves)" .
Minor text changes
Document status promoted from preliminary to production data.
Updated Figure 1: "Internal schematic diagram"
Updated Table 2: "Absolute maximum ratings"
Updated Figure 25: "Reverse recovery charge vs. diode current slope"
Minor text changes
DocID028678 Rev 4 15/16
STGF4M65DF2
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16/16 DocID028678 Rev 4
