BUV48A
High voltage fast switching NPN power transistor
Features
■
■
High current capability
Fast switching speed
Applications
■
■
Switching mode power supplies
Flyback and forward single transistor low power converter
Description
The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package.
It is intended for switching and industrial applications from single and three-phase mains.
TO-247
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
BUV48A
Marking
BUV48A
November 2009 Doc ID 5989 Rev 9
Package
TO-247
Packaging
Tube
1/8 www.st.com
8
Absolute maximum ratings
1 Absolute maximum ratings
BUV48A
Table 2.
Absolute maximum ratings
I
C
I
CM
I
CP
I
B
V
CER
V
CES
V
CEO
V
EBO
I
BM
P
TOT
T
STG
T
J
Symbol Parameter Value
Collector-emitter voltage (R
BE
= 10 Ω ) 1000
Collector-emitter voltage (V
BE
= 0) 1000
450 Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
7
15
Collector peak current
Collector peak current non repetitive (t p
Base current
Base peak current
Total dissipation at T case
= 25 °C
Storage temperature
Max. operating junction temperature
< 20 µs)
30
55
4
20
125
-65 to 150
150
Table 3.
Symbol
R thJC
Thermal data
Parameter
Thermal resistance junction-case __ max
Value
1
Unit
°C/W
Unit
A
A
V
A
A
V
V
V
A
W
°C
°C
2/8 Doc ID 5989 Rev 9
BUV48A Electrical characteristics
T case
= 25 °C; unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter Test conditions
V
I
I
I
CES
CER
EBO
CEO(sus)
(1)
V
EBO
Collector cut-off current
(V
BE
= 0)
Collector cut-off current
(R
BE
= 10 Ω )
Emitter cut-off current
(I
C
= 0)
Collector-emitter sustaining voltage
(I
B
= 0)
Emitter-base voltage
(I
C
= 0)
Collector-emitter saturation voltage
I
I
V
V
V
V
C
CE
CE
CE
EB
E
= 1000 V
= 1000 V T
= 1000 V
V
CE
= 1000 V
= 5 V
= 200 mA
= 50 mA c
T c
= 125 °C
= 125 °C
V
CE(sat)
(1)
I
C
= 8 A I
B
= 1.6 A
I
C
= 12 A I
B
= 2.4 A
V
BE(sat)
(1)
Base-emitter saturation voltage
I
C
= 8 A I
B
= 1.6 A h
FE
(1)
DC current gain I
C
= 8 A V
CE
= 5 V t on t s t f
Resistive load
Turn-on time
Storage time
Fall time
I
V
CC
B1
= 150 V I
= -I
B2
= 1.6 A
C
= 8 A t s t f
Inductive load
Storage time
Fall time
V
CC
= 300 V I
C
= 8 A
V
BE
= -5 V I
B1
= 1.6 A
L
B
= 3 µH t s t f
Inductive load
Storage time
Fall time
V
CC
= 300 V I
C
= 8 A
V
L
BE
B
= -5 V I
1.
Pulse test: pulse duration
≤
300 µs, duty cycle
≤
2 %
B1
= 3 µH T
C
= 1.6 A
= 125 °C
Min.
Typ.
Max.
Unit
200
2
500
4
µA mA
µA mA
450
7
8
3
0.13
1
30
1.5
5
1.6
1
3
0.8
5
0.4
mA
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
Doc ID 5989 Rev 9 3/8
Electrical characteristics
Figure 2.
Resistive load switching test circuit
BUV48A
1.
Fast electronic switch
2.
Non-inductive resistor
Figure 3.
Inductive load switching test circuit
1.
Fast electronic switch
2.
Non-inductive resistor
3.
Fast recovery rectifier
4/8 Doc ID 5989 Rev 9
BUV48A
3 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Doc ID 5989 Rev 9 5/8
Package mechanical data
Dim.
E e
L b 2 c
D
A
A1 b b 1
L1
L2
øP
øR
S
TO-247 mechanical data
mm.
Typ.
Min.
4.
8 5
2.20
1.0
2.0
3 .0
0.40
1 9 .
8 5
15.45
5.45
14.20
3 .70
1 8 .50
3 .55
4.50
5.50
14.
8 0
4.
3 0
3 .65
5.50
Max.
5.15
2.60
1.40
2.40
3 .40
0.
8 0
20.15
15.75
BUV48A
6/8 Doc ID 5989 Rev 9
BUV48A
Table 5.
Date
Document revision history
29-Oct-2007
16-Nov-2009
Revision
8
9
Changes
Package change from TO-218 to TO-247.
Added h
FE
specification Table 4 on page 3 .
Revision history
Doc ID 5989 Rev 9 7/8
BUV48A
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