STP50N65DM6
Datasheet
N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package
TAB
G(1)
TO-220
1
2
3
D(2, TAB)
S(3)
AM01476v1_tab
Features
Order code
STP50N65DM6
V
DS
650 V
R
DS(on)
max.
91 mΩ
• Fast-recovery body diode
• Lower R
DS(on)
per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
I
D
33 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q rr
), recovery time (t rr
) and excellent improvement in R
DS(on)
per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STP50N65DM6
Product summary
Order code
Marking
Package
Packing
STP50N65DM6
50N65DM6
TO-220
Tube
DS12360 - Rev 4 - July 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
STP50N65DM6
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
DM
(1)
P
TOT dv/dt
(2) di/dt (2) dv/dt (3)
T stg
T
J
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Parameter
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Peak diode recovery current slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width limited by safe operating area
2. I
SD
≤ 33 A, V
DS
(peak) < V
(BR)DSS
, V
DD
= 400V
3. V
DS
≤ 520 V
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-amb
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by T jmax
)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
±25
33
21
120
250
100
1000
100
-55 to 150
Unit
V
A
A
A
W
V/ns
A/µs
V/ns
°C
Value
0.5
62.5
Unit
°C/W
°C/W
Value
9
560
Unit
A mJ
DS12360 - Rev 4 page 2/11
2
STP50N65DM6
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4. On/off-state
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
V
GS
= 0 V, I
Test conditions
D
= 1 mA
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current
Gate body leakage current
Gate threshold voltage
Static drain-source onresistance
1. Defined by design, not subject to production test.
V
GS
= 0 V, V
DS
= 650 V
V
GS
= 0 V, V
DS
= 650 V
T
C
= 125 °C
(1)
V
DS
V
DS
= 0 V, V
= V
GS
GS
, I
D
= ±25 V
= 250 µA
V
GS
= 10 V, I
D
= 16.5 A
Min.
Typ.
Max.
Unit
650 V
5 µA
3.25
4
74
100
±5
4.75
91
µA
µA
V mΩ
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R g
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
Test conditions
= 100 V, f = 1 MHz, V
GS
Equivalent output capacitance V
DS
= 0 to 520 V, V
GS
= 0 V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
Total gate charge
Gate-source charge
Gate-drain charge
= 0 V
V
DD
= 520 V, I
D
= 33 A
V
GS
= 0 to 10 V (see
Figure 14. Test circuit for gate charge behavior
)
Min.
-
-
-
-
-
-
-
Typ.
2300
165
3
414
1.7
52.5
14.5
22.5
Max.
-
-
-
-
-
-
-
Unit pF pF pF pF
Ω nC nC nC
1. C oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
OSS
when VDS increases from 0 to 80% V
DSS
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 325 V, I
D
= 16.5 A, R
G
= 4.7 Ω
V
GS
= 10 V (see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform )
Min.
Typ.
Max.
Unit
-
19.2
12
-
ns ns
-
59.6
9.6
-
ns ns
DS12360 - Rev 4 page 3/11
STP50N65DM6
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Test conditions
V
GS
= 0 V, I
SD
= 33 A
I
SD
= 33 A, di/dt = 100 A/µs,V
DD
= 60 V
(see Figure 15. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 33 A, di/dt = 100 A/µs V
DD
= 60 V,
T j
= 150 °C (see
Figure 15. Test circuit for inductive load switching and diode recovery times )
-
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
33 A
120 A
1.6
130
0.65
10
226
2.32
20.6
V ns
µC
A ns
µC
A
DS12360 - Rev 4 page 4/11
STP50N65DM6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG261120190945SOA
I
DM
10 2 t p
=1 µs
10 1
10 0
10 -1
10 -2
10 -1
in this area
by
R
DS(on)
R
DS(on)
max.
t p
=10 µs
T
C
T
J
= 25 °C
≤ 150 °C single pulse
10 0 10 1 t p
=10 ms
10 2 t p
=100 µs
V
(BR)DSS t p
=1 ms
V
DS
(V)
Figure 2. Maximum transient thermal impedance
Z thj-c
(°C/W)
GADG211120191320ZTH
0.4
0.3
duty = 0.5
10 -1
0.2
0.1
0.5
10 -2
Single pulse R thJ-C
= 0.5°C/W
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 3. Typical output characteristics
I
D
(A)
100
V
GADG090720191225OCH
GS
= 9, 10 V
V
GS
= 8 V
80
V
GS
= 7 V
60
40
20
0
0 4 8
V
GS
= 6 V
V
GS
= 5 V
12 16 V
DS
(V)
Figure 5. Typical gate charge characteristics
V
DS
(V)
600
500
V
DD
GADG090720191225QVG
= 520 V, I
D
= 33 A
V
GS
(V)
Q g
12
10
400
Q gs
300
200
100
0
0
Q gd
8
6
10 20 30 40 50 60
4
2
Q
0 g
(nC)
60
40
20
0
4
Figure 4. Typical transfer characteristics
I
D
(A)
100
GADG090720191225TCH
V
DS
= 20 V
80
5 6 7 8 9 V
GS
(V)
Figure 6. Typical drain-source on-resistance
R
DS(on)
(mΩ)
80
GADG090720191226RID
74
72
78
76
70
68
0 5
V
GS
= 10 V
10 15 20 25 30 I
D
(A)
DS12360 - Rev 4 page 5/11
STP50N65DM6
Electrical characteristics (curves)
Figure 7. Typical capacitance characteristics
C
(pF)
GADG090720191226CVR
10 4
C
ISS
10 3
10 2
10 1
10 0
10 -1 f = 1 MHz
10 0 10 1 10 2
C
OSS
C
RSS
V
DS
(V)
Figure 8. Typical output capacitance stored energy
E
OSS
(µJ)
24
GADG090720191228EOS
12
8
20
16
4
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 9. Normalized gate threshold vs temperature
V
GS(th)
(norm.)
GADG090720191229VTH
1.1
1.0
ID = 250 µA
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T j
(°C)
Figure 10. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GADG090720191229RON
2.5
2.0
V
GS
= 10 V
1.5
1.0
0.5
0.0
-75 -25 25 75 125 T j
(°C)
Figure 11. Normalized breakdown voltage vs temperature
V
(BR)DSS
(norm.)
GADG090720191230VTH
1.10
I
D
= 1 mA
1.05
1.00
0.95
0.90
0.85
-75 -25 25 75 125 T j
(°C)
Figure 12. Typical reverse diode forward characteristics
V
SD
(V)
1.1
GADG090720191230SDF
Tj = -50 °C
1.0
0.9
0.8
0.7
0.6
0.5
0 5
Tj = 25°C
Tj = 150°C
10 15 20 25 30 I
SD
(A)
DS12360 - Rev 4 page 6/11
STP50N65DM6
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF V
DD
D.U.T.
Figure 14. Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
100 Ω D.U.T.
V
G
AM01469v10
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
A A fast diode
B
B
G
+
_
R
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS12360 - Rev 4 page 7/11
4
4.1
STP50N65DM6
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-220 type A package information
Figure 19. TO-220 type A package outline
DS12360 - Rev 4
0015988_typeA_Rev_23 page 8/11
DS12360 - Rev 4
Dim.
e1
F
H1
E e
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
Slug flatness
STP50N65DM6
TO-220 type A package information
Table 8. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
0.03
3.85
2.95
0.10
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
page 9/11
Revision history
Date
13-Nov-2017
18-Oct-2019
04-Dec-2019
28-Jul-2020
Version
1
2
3
4
Table 9. Document revision history
Changes
First release.
Update:
Electrical ratings
Section 2 Electrical characteristics
Added Section 2.1 Electrical characteristics (curves)
Minor text changes.
Updated Section 2.1 Electrical characteristics (curves) .
Updated
Section 1 Electrical ratings .
Minor text changes.
STP50N65DM6
DS12360 - Rev 4 page 10/11
STP50N65DM6
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DS12360 - Rev 4 page 11/11
