STFN42
High voltage fast-switching
NPN power transistor
Features
■
■
High voltage capability
Very high switching speed
Applications
■
■
Electronic ballasts for fluorescent lighting
Battery charger
Description
This device is a high voltage fast-switching NPN power transistor, manufactured using high voltage multi-epitaxial planar technology for high switching speeds.
It employs a cellular emitter structure with planar edge termination to enhance switching speeds, while maintaining a wide RBSOA.
4
Figure 1.
Internal schematic diagram
C (2, 4)
B
(1)
1
2
3
SOT-89
E ( 3 )
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Table 1.
Device summary
Order code Marking Packages Packaging
STFN42 N42 SOT-89 Tape and reel
February 2012 Doc ID 12193 Rev 3 1/10 www.st.com
10
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
T stg
T
J
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5 ms)
Base current
Base peak current (t
P
< 5 ms)
Total dissipation at T a
= 25 °C
Storage temperature
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
R thj-amb
Thermal resistance junction ambient max
STFN42
Value
700
400
9
1
2
0.5
1
1.4
-65 to 150
150
Unit
A
W
A
A
V
A
V
V
°C
Value
90
Unit
°C/W
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2/10 Doc ID 12193 Rev 3
STFN42
2 Electrical characteristics
Electrical characteristics
(T case
= 25°C unless otherwise specified).
Table 4.
Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
CES
EBO
Collector cut-off current
(V
BE
= 0)
V
CE
= 700 V
V
CE
= 700 V; T
C
= 125 °C
Collector cut-off current
(I
C
=0)
V
EB
= 9 V
V
CEO(sus)
(1)
Collector-emitter sustaining voltage
(I
B
=0)
I
C
= 10 mA
V
V
CE(sat)
(1)
BE(sat)
(1)
Collector-emitter saturation voltage
I
C
= 0.25 A I
B
= 0.05 A
I
C
= 0.5 A I
B
= 0.125 A
I
C
= 0.75 A I
B
= 0.25 A
Base-emitter saturation voltage
I
C
= 0.25 A I
B
= 0.05 A
I
C
= 0.5 A I
B
= 0.125 A h
FE
(1)
DC current gain
I
C
= 0.4 A V
CE
= 5 V
I
C
= 0.8 A V
CE
= 5 V t f
Inductive load
Fall time
I
C
= 250 mA I
B(on)
L = 200 µH
1.
Pulse test: pulse duration
≤
300 µs, duty cycle
≤
2 %.
= -I
B(off)
= 50 mA
400
10
5
0.2
0.3
0.4
0.3
0.1
0.5
0.1
0.5
1
1.5
1
1.2
30
20 mA mA mA
V
V
V
V
V
V
µs
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Doc ID 12193 Rev 3 3/10
Electrical characteristics STFN42
Figure 2.
DC current gain (V
CE
=3 V) Figure 3.
DC current gain (V
CE
=5 V)
Figure 4.
Collector emitter saturation voltage
Figure 5.
Base emitter saturation voltage
Figure 6.
Switching time inductive load
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4/10 Doc ID 12193 Rev 3
STFN42
3 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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Doc ID 12193 Rev 3 5/10
Package mechanical data
Table 5.
H
H1
K
L
R
β
D3
E e e1
C
C1
D
D1
A
B
B1
SOT-89 mechanical data
Dim.
Min.
1.40
0.44
0.36
0.35
0.35
4.40
1.62
2.29
1.42
2.92
3.94
2.70
1°
0.89
mm
Typ.
0.90
Max.
1.60
0.56
0.48
0.44
0.44
4.60
1.83
2.60
1.57
3.07
4.25
3.10
8°
1.20
STFN42
0.25
90°
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6/10 Doc ID 12193 Rev 3
STFN42
Figure 7.
SOT-89 drawings
Package mechanical data
?2%6?%
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Doc ID 12193 Rev 3 7/10
Package mechanical data
Figure 8.
SOT-89 recommended footprint dimension in millimeters
STFN42
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&OOTPRINT
8/10 Doc ID 12193 Rev 3
STFN42
4 Document revision history
Document revision history
Table 6.
Date
Document revision history
16-Mar-2006
25-Jan-2011
08-Feb-2012
Revision
1
2
3
Changes
Initial release.
Updated package mechanical data.
Mechanical data updated
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Doc ID 12193 Rev 3 9/10
STFN42
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10/10 Doc ID 12193 Rev 3
