STP26N60M2, STW26N60M2
N-channel 600
V, 0.14 Ω typ., 20 A MDmesh™ M2
Power MOSFETs in TO-220 and TO-247 packages
Datasheet - production data
TAB
TO-220
1
2
3
TO-247
Figure 1: Internal schematic diagram
1
2
3
Features
Order code
V
DS
@
T
Jmax
R
DS(on) max.
I
D
P
TOT
STP26N60M2
650 V 0.165 Ω 20 A 169 W
STW26N60M2
Extremely low gate charge
Excellent output capacitance (C
OSS
) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Order code
STP26N60M2
STW26N60M2
Table 1: Device summary
Marking Package
26N60M2
TO-220
TO-247
Packing
Tube
March 2017 DocID028178 Rev 2
This is information on a product in full production.
1/16 www.st.com
Contents
Contents
STP26N60M2, STW26N60M2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1
4.2
TO-220 type A package information ................................................ 11
TO-247 package information ........................................................... 13
5 Revision history ............................................................................ 15
2/16 DocID028178 Rev 2
STP26N60M2, STW26N60M2
1 Electrical ratings
Symbol
V
GS
I
D
I
DM
(1)
P
TOT
dv/dt (2) dv/dt (3)
T stg
T j
Table 2: Absolute maximum ratings
Parameter
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
Electrical ratings
Value
±25
20
13
80
169
15
50
-55 to 150
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
SD
≤ 20 A, di/dt=400 A/μs; V
DS(peak)
< V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
.
(3)
V
DS
≤ 480 V.
Table 3: Thermal data
Symbol Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Symbol
I
AR
(1)
E
AS
(2)
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Notes:
(1)
Pulse width limited by T jmax
.
(2)
starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
TO-220
Value
TO-247
0.74
62.5 50
Value
3.8
250
Unit
V
A
A
W
V/ns
°C
Unit
°C/W
Unit
A mJ
DocID028178 Rev 2 3/16
Electrical characteristics
2 Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V,
T case
= 125 °C (1)
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 10 A
STP26N60M2, STW26N60M2
Min. Typ. Max. Unit
600 V
1
µA
100
±10 µA
3 4 V
0.14 0.165
Ω
2
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C
oss eq.
(1)
R
G
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
DS
GS
= 100 V, f = 1 MHz,
= 0 V
Equivalent output capacitance
V
DS
= 0 to 480 V, V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
GS
= 0 V
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480 V, I
D
= 20 A,
V
GS
= 10 V (see Figure 17:
"Test circuit for gate charge behavior" )
-
-
-
-
-
Min. Typ. Max. Unit
-
-
1360
88
-
- pF
- 2 -
124
4
34
5.6
16.3
-
-
-
-
- pF
Ω nC
Notes:
(1)
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
.
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 7: Switching times
Test conditions
V
DD
= 300 V, I
D
= 10 A R
G
= 4.7
Ω,
V
GS
= 10 V (see Figure 16: "Test circuit for resistive load switching times" and Figure 21: "Switching time waveform" )
Min. Typ. Max. Unit
-
-
-
-
20.2
8
66
10
-
-
-
- ns
4/16 DocID028178 Rev 2
STP26N60M2, STW26N60M2
Symbol
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
I
RRM t
Q rr rr
RRM
Parameter
Reverse recovery current
Reverse recovery time
Table 8: Source-drain diode
Test conditions
Reverse recovery charge
Reverse recovery current
V
GS
= 0 V, I
SD
= 20 A
I
SD
= 20 A, di/dt = 100 A/µs,
V
DD
= 60 V (see Figure 18:
"Test circuit for inductive load switching and diode recovery times" )
I
SD
= 20 A, di/dt = 100 A/µs,
V
DD
= 60 V, T j
= 150 °C (see
Figure 18: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
- 20 A
- 80 A
-
-
-
360
5
1.6 V ns
µC
- 27
-
-
-
556
8
29
A ns
µC
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028178 Rev 2 5/16
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for TO-220
STP26N60M2, STW26N60M2
Figure 3: Thermal impedance for TO-220
6/16
Figure 4: Safe operating area for TO-247 Figure 5: Thermal impedance for TO-247
Figure 6: Output characteristics Figure 7: Transfer characteristics
DocID028178 Rev 2
STP26N60M2, STW26N60M2
Figure 8: Gate charge vs gate-source voltage
Electrical characteristics
Figure 9: Static drain-source on-resistance
Figure 10: Capacitance variations Figure 11: Normalized gate threshold voltage vs temperature
Figure 12: Normalized on-resistance vs temperature Figure 13: Normalized V
(BR)DSS
vs temperature
DocID028178 Rev 2 7/16
Electrical characteristics
Figure 14: Output capacitance stored energy
STP26N60M2, STW26N60M2
Figure 15: Source-drain diode forward characteristics
8/16 DocID028178 Rev 2
STP26N60M2, STW26N60M2
3 Test circuits
Figure 16: Test circuit for resistive load switching times
Test circuits
Figure 17: Test circuit for gate charge behavior
Figure 18: Test circuit for inductive load switching and diode recovery times
Figure 19: Unclamped inductive load test circuit
Figure 20: Unclamped inductive waveform
Figure 21: Switching time waveform
DocID028178 Rev 2 9/16
Package information
4 Package information
STP26N60M2, STW26N60M2
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
10/16 DocID028178 Rev 2
STP26N60M2, STW26N60M2
4.1 TO-220 type A package information
Figure 22: TO-220 type A package outline
Package information
DocID028178 Rev 2 11/16
Package information
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
STP26N60M2, STW26N60M2
Table 9: TO-220 type A mechanical data mm
Min. Typ. Max.
4.40
0.61
1.14
0.48
15.25
1.27
4.60
0.88
1.55
0.70
15.75
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
3.75
2.65
16.40
28.90
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
12/16 DocID028178 Rev 2
STP26N60M2, STW26N60M2
4.2 TO-247 package information
Figure 23: TO-247 package outline
Package information
DocID028178 Rev 2
0075325_8
13/16
Package information
Dim. e
L
L1
L2
ØP
ØR
S b2 c
D
E
A
A1 b b1
STP26N60M2, STW26N60M2
Table 10: TO-247 package mechanical data mm
Min. Typ. Max.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
5.45
18.50
5.50
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
14/16 DocID028178 Rev 2
STP26N60M2, STW26N60M2
5
Revision history
Revision history
Date Revision
Table 11: Document revision history
Changes
03-Aug-2015
08-Mar-2017
1
2
First release.
Updated Table 2: "Absolute maximum ratings" , Table 3: "Thermal data"
and Figure 10: "Capacitance variations" .
Minor text changes.
DocID028178 Rev 2 15/16
STP26N60M2, STW26N60M2
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16/16 DocID028178 Rev 2
