STD35P6LLF6
Pchannel 60 V, 0.025 Ω typ., 35 A STripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code V
DSS
R
DS(on)
max. I
D
STD35P6LLF6 60 V 0.028 Ω
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
P
TOT
35 A 70 W
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all packages.
Order code
STD35P6LLF6
S(3)
AM11258v1
Table 1: Device summary
Marking Package
35P6LLF6 DPAK
Packaging
Tape and Reel
April 2017 DocID025600 Rev 3
This is information on a product in full production.
1/16 www.st.com
Contents
Contents
STD35P6LLF6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
4.2
DPAK package information ............................................................. 10
Packing information ......................................................................... 13
5 Revision history ............................................................................ 15
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STD35P6LLF6
1
Electrical ratings
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
T stg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature range
T j
Operating junction temperature range
Value
60
± 20
35
25
140
70
-55 to 175 °C
Notes:
(1)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
Thermal resistance junction-case max
Value
2.14
Unit
°C/W
For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed.
Unit
V
V
A
A
A
W
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Electrical characteristics
2
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STD35P6LLF6
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 250 µA
I
DSS
Zero gate voltage Drain current
V
GS
= 0 V, V
DS
= 60 V
V
GS
= 0 V, V
DS
= 60 V,
T
C
= 125 °C (1)
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
V
DS
= 0 V, V
GS
= ± 20 V
R
DS(on)
Static drain-source onresistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 17.5 A
V
GS
= 4.5 V, I
D
= 17.5 A
Min. Typ. Max. Unit
60
1
V
1 µA
10 µA
±100 nA
2.5
0.025 0.028
V
Ω
0.03 0.036
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 30 V, I
D
= 35 A,
V
GS
= 0 to 4.5 V (see Figure
14: "Gate charge test circuit" )
R
G
Gate input resistance
I
D
= 0 A, gate DC bias = 0 V, f = 1 MHz, magnitude of alternative signal = 20 mV
Table 6: Switching times
Test conditions Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off-delay time t f
Fall time
V
DD
= 30 V, I
D
= 17.5 A
R
G
= 4.7
Ω, V
GS
= 10 V (see
Figure 13: "Switching times test circuit for resistive load" )
Min. Typ. Max. Unit
-
-
3780
262
-
- pF pF
-
-
-
-
-
170
30
10.8
10.5
1.7
-
-
-
-
- pF nC nC nC
Ω
Min. Typ. Max. Unit
- 51.4
- 39
- 171
- 21
-
-
-
- ns ns ns ns
For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed.
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STD35P6LLF6
Symbol Parameter
V
SD
(1)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM
Table 7: Source drain diode
Test conditions
Reverse recovery current
V
I
V
GS
SD
DD
= 0 V, I
SD
= 35 A
= 35 A, di/dt = 100 A/µs,
= 48 V, (see Figure 15:
"Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
- 34
- 48
- 2.8
1.5 V ns nC
A
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%
For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed.
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Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STD35P6LLF6
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Normalized gate threshold voltage vs temperature
Figure 7: Normalized V(BR)DSS vs temperature
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STD35P6LLF6
Figure 8: Static drain-source on-resistance
Electrical characteristics
Figure 9: Normalized on-resistance vs. temperature
Figure 10: Gate charge vs gate-source voltage Figure 11: Capacitance variations voltage
Figure 12: Source-drain diode forward characteristics
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Test circuits
3 Test circuits
Figure 13: Switching times test circuit for resistive load
STD35P6LLF6
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
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STD35P6LLF6
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
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Package information
4.1 DPAK package information
Figure 16: DPAK (TO-252) type A2 package outline
STD35P6LLF6
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0068772_type-A2_rev21
STD35P6LLF6
Dim.
D1
E
E1 e e1
H
L
L1
L2
L4
R
V2 b4 c c2
D
A
A1
A2 b
Package information
Table 8: DPAK (TO-252) type A2 mechanical data mm
Min. Typ. Max.
4.95
6.40
5.10
2.16
4.40
9.35
1.00
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.60
0.65
0.60
0°
5.10
5.20
2.28
2.80
0.80
0.20
5.25
6.60
5.30
2.40
4.60
10.10
1.50
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
3.00
0.95
1.00
8°
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Package information STD35P6LLF6
Figure 17: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm)
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STD35P6LLF6
4.2 Packing information
Figure 18: DPAK (TO-252) tape outline
Package information
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Package information
Figure 19: DPAK (TO-252) reel outline
STD35P6LLF6
14/16
Dim.
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
E
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
2.55
3.9
Table 9: DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
1.85
7.6
2.75
4.1
8.1
2.1
A
B
C
D
G
N
T
Base qty.
Bulk qty.
Min.
1.5
12.8
20.2
16.4
50
0.35
16.3 mm
Max.
330
13.2
18.4
22.4
2500
2500
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STD35P6LLF6
5
Revision history
Revision history
Date Revision
Table 10: Document revision history
Changes
11-Dec-2013
24-Feb-2015
03-Apr-2017
1
2
3
First release.
In title description on cover page, changed 0.02 Ω to 0.023 Ω
In features table on cover page, changed 0.028 Ω to 0.026 Ω
Updated Table 2: Absolute maximum ratings
Updated Table 4: Static
– renamed table and updated Static drainsource on-resistance values
Updated Table 5: Dynamic
– test conditions and all typical values
Updated Table 6: Switching times
– test conditions and all typical values
Updated Table 7: Source-drain diode
– test conditions and all typical values
Added Section 2.2: Electrical characteristics (curves)
Updated Section 4: Package mechanical data Minor text changes
Updated V
SD
maximum value in Table 7: "Source drain diode" .
Updated Section 4.1: "DPAK package information"
Minor text changes.
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STD35P6LLF6
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