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STGIPN3H60A
SLLIMM™-nano small low-loss intelligent molded module
IPM, 3 A, 600 V, 3-phase IGBT inverter bridge
Datasheet - production data
Applications
3-phase inverters for motor drives
Dish washers, refrigerator compressors, heating systems, air-conditioning fans, draining and recirculation pumps
Description
This intelligent power module implements a compact, high performance AC motor drive in a simple, rugged design. It is composed of six
IGBTs with freewheeling diodes and three halfbridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is optimized for thermal performance and Features
IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes
Optimized for low electromagnetic interference
V
CE(sat)
negative temperature coefficient
3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull-down compactness in built-in motor applications, or other low power applications where assembly space is limited. This IPM includes an operational amplifier, completely uncommitted, and a comparator that can be used to design a fast and efficient protection circuit. SLLIMM™ is a trademark of STMicroelectronics. resistors
Undervoltage lockout
Internal bootstrap diode
Interlocking function
Optimized pinout for easy board layout
Table 1: Device summary
Order code Marking Package Packing
STGIPN3H60A GIPN3H60A NDIP-26L Tube
September 2016 DocID018958 Rev 5
This is information on a product in full production.
1/18 www.st.com
Contents
Contents
STGIPN3H60A
1 Internal schematic diagram and pin configuration ....................... 3
2 Electrical ratings ............................................................................. 6
Absolute maximum ratings ................................................................ 6
Thermal data ..................................................................................... 6
3 Electrical characteristics ................................................................ 7
4 Application circuit example .......................................................... 11
5 Package information ..................................................................... 13
NDIP-26L type C package information ............................................ 14
NDIP-26L packing information ........................................................ 16
6 Revision history ............................................................................ 17
2/18 DocID018958 Rev 5
STGIPN3H60A
1
Internal schematic diagram and pin configuration
Internal schematic diagram and pin configuration
Figure 1: Internal schematic diagram
DocID018958 Rev 5 3/18
Internal schematic diagram and pin configuration
Table 2: Pin description
Pin Symbol Description
LIN U
V
BOOT
U
P
U
N
U
V
BOOT
V
V
N
V
V
BOOT
W
W
N
W
V
CC
V
HIN V
LIN V
NC
V
CC
U
HIN U
NC
GND
NC
V
CC
W
HIN W
LIN W
NC
NC
NC
20
21
22
23
16
17
18
19
24
25
26
9
10
11
12
13
14
15
4
5
6
7
8
1
2
3
Ground
Not connected
Low voltage power supply W phase
High side logic input for W phase
Low side logic input for W phase
Not connected
Not connected
Not connected
Low voltage power supply V phase
High side logic input for V phase
Low side logic input for V phase
Not connected
Low voltage power supply for U phase
High side logic input for U phase
Not connected
Low side logic input for U phase
Bootstrap voltage for U phase
Positive DC input
U phase output
Negative DC input for U phase
Bootstrap voltage for V phase
V phase output
Negative DC input for V phase
Bootstrap voltage for W phase
W phase output
Negative DC input for W phase
STGIPN3H60A
4/18 DocID018958 Rev 5
STGIPN3H60A
PIN26
Internal schematic diagram and pin configuration
Figure 2: Pin layout (top view)
(*) (*)
PIN17
PIN #1 ID
PIN1
(*) Dummy pin internally connected to P (positive DC input).
PIN16
AM09368V1
DocID018958 Rev 5 5/18
Electrical ratings
2
2.1
Electrical ratings
Absolute maximum ratings
Symbol
V
CES
± I
± I
P
TOT
Table 3: Inverter part
Parameter
Each IGBT collector emitter voltage (V
Each IGBT continuous collector current at T
C
= 25°C
Each IGBT pulsed collector current
Each IGBT total dissipation at T
C
= 25°C
Notes:
(1)
Applied between HIN i
, LIN i
and G
ND
for i = U, V, W.
(2)
Calculated according to the iterative formula:
STGIPN3H60A
Value
600
3
18
8
2.2
(3)
Pulse width limited by max junction temperature.
Symbol
Table 4: Control part
Parameter
V
OUT
V
CC
Symbol
Output voltage applied between OUT
U
, OUT
V
, OUT
W
-
GND
Low voltage power supply
V boot
Bootstrap voltage
V
IN
Logic input voltage applied between HIN i
, LIN i
and G
ND for i = U, V, W
∆V
OUT/dT
Allowed output slew rate
Table 5: Total system
Parameter
V
ISO
T j
T
C
Isolation withstand voltage applied between each pin and heatsink plate (AC voltage, t = 60 s.)
Power chips operating junction temperature range
Module operation case temperature range
Min.
- 0.3
- 0.3
- 0.3 V
CC
+ 0.3
Value
1000
Max. Unit
V boot
- 18 V boot
+ 0.3 V
50
-40 to 150
-40 to 125
18
618
V
V
V
V/ns
Unit
V
°C
°C
Thermal data
Symbol
R thJA
Table 6: Thermal data
Parameter
Thermal resistance junction-ambient
Value
50
Unit
°C/W
6/18 DocID018958 Rev 5
Unit
V
A
A
W
STGIPN3H60A Electrical characteristics
3 Electrical characteristics
3.1 Inverter part
Symbol
V
CE(sat)
I
CES
V
F
T
J
= 25 °C unless otherwise specified.
Parameter
Collector-emitter saturation voltage
Table 7: Static
Test conditions
V
CC
= V boot
= 15 V, V
I
C
= 1 A
V
CC
= V boot
= 15 V, V
I
C
= 1 A, T
J
= 125 °C
Collector-cut off current (V
0 “logic state”)
Diode forward voltage
V
CE
= 550 V, V
CC
= V
Boot
= 15 V
V
= 0 “logic state”, I
C
= 1 A
Min. Typ. Max. Unit
-
-
-
-
2.15 2.6
1.65
250 µA
1.7
V
V
Notes:
(1)
Applied between HIN i
, LIN i
and G
ND
for i = U, V, W (LIN inputs are active-low).
Symbol Parameter t
Turn-on time t
Crossover time (on) t
Turn-off time t
Crossover time (off) t rr
Reverse recovery time
E on
E off
Turn-on switching energy
Turn-off switching energy
Table 8: Inductive load switching time and energy
Test conditions Min. Typ. Max. Unit
V
DD
= 300 V,
V
CC
= V boot
= 15 V,
V
I
C
= 1 A
(see Figure 4: "Switching time definition" )
-
-
-
-
-
-
-
275
90
890
125
50
18
13
-
-
-
-
-
-
- ns
µJ
Notes:
(1) t
ON
and t
OFF
include the propagation delay time of the internal drive. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the internally given gate driving condition.
(2)
Applied between HIN i
, LIN i
and G
ND
for i = U, V, W (LIN inputs are active-low).
DocID018958 Rev 5 7/18
Electrical characteristics
INPUT
Figure 3: Switching time test circuit
VCC
Lin
Hin
Vcc
BOOT
HVG
OUT
LVG
GND
VBOOT>VCC
L
IC
VCE
STGIPN3H60A
BUS
0
1
Figure 4: Switching time definition
8/18 DocID018958 Rev 5
STGIPN3H60A Electrical characteristics
3.2 Control part
Table 9: Low voltage power supply (V
CC
= 15 V unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Symbol Unit
V
CC_thON
Undervoltage turn-on threshold
V
CC_thOFF
Undervoltage turn-off threshold
V
CC_hys
Undervoltage hystereses
I qccu
I qcc
Undervoltage quiescent supply current
Quiescent current
Symbol
V
CC
< 7.9 V
V
CC
= 15 V
9.1
7.9
0.9
9.6
8.3
250
350
10.1
8.8
330
450
Table 10: Bootstrapped voltage (V
CC
= 15 V unless otherwise specified)
Parameter Test conditions Min. Typ. Max. Unit
V
V
V
µA
µA
V boot_thON
Undervoltage turn-on threshold
V boot_thOFF
Undervoltage turn-off threshold
V boothys
I qboot
R
DS(on)
Symbol
8.5
7.2
9.5
8.3
Undervoltage hystereses
Quiescent current
Bootstrap driver on-resistance V
CC
> 12.5 V
0.9
125
Table 11: Logic inputs (V
CC
= 15 V unless otherwise specified)
Parameter Test conditions Min. Typ.
10.5
9.2
250
Max. Unit
V
V
V
µA
Ω
V il
V ih
I il
I ih
Dt
Low level logic input voltage
High level logic input voltage
Low level logic input current (1)
High level logic input current (1)
V
IN
V
IN
1.8
-1
20
320
1.1
70
V
V
µA
µA ns
Notes:
(1)
Applied between HIN i
, LIN i
and G
ND
for i = U, V, W
(2)
See Figure 5: "Dead time and interlocking definition"
DocID018958 Rev 5 9/18
Electrical characteristics
Figure 5: Dead time and interlocking definition
STGIPN3H60A
10/18 DocID018958 Rev 5
STGIPN3H60A
4 Application circuit example
Application circuit example
Figure 6: Application circuit example
Application designers are free to use a different scheme according with the specifications of the device.
DocID018958 Rev 5 11/18
Application circuit example
4.1 Guidelines
STGIPN3H60A
Input signals HIN, LIN are active-high logic. A 500 k Ω (typ.) pull-down resistor is builtin for each high side input. If an external RC filter is used for noise immunity, attention should be given to the variation of the input signal level.
To prevent input signal oscillation, the wiring of each input should be as short as possible.
By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals without an opto-coupler is possible.
Each capacitor should be located as close as possible to the pins of the IPM.
Low inductance shunt resistors should be used for phase leg current sensing.
Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible. Additional high frequency ceramic capacitors mounted close to the module pins will further improve performance.
These guidelines are useful for application design to ensure the specifications of the device. For further details, please refer to the relevant application note AN4043.
Symbol
Table 12: Recommended operating conditions
Parameter Test conditions Min. Typ. Max. Unit
V
PN
V
CC
V
BS
Supply voltage
Control supply voltage
High side bias voltage
Applied between P-Nu, Nv, Nw
Applied between V
CC
-GND
Applied between V
BOOTi
-OUT i for i = U, V, W
300 500
12 15 17
11.5 17
V
V
V t dead
Blanking time to prevent
Arm-short
For each input signal 1.5 µs f
PWM
PWM input signal
-40°C < T c
< 100 °C
-40°C < T j
< 125 °C
25 kHz
T
C
Case operation temperature
100 °C
12/18 DocID018958 Rev 5
STGIPN3H60A
5 Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID018958 Rev 5 13/18
Package information
5.1 NDIP-26L type C package information
Figure 7: NDIP-26L type C package outline
STGIPN3H60A
14/18 DocID018958 Rev 5
8278949_7
STGIPN3H60A
Dim. b3 c c1
D
D1
D2
D3
A4 b b1 b2
A
A1
A2
A3
E e e1 eB1 eB2
L
0.82
0.46
0.45
29.05
0.50
0.35
0.80
3.00
1.70
5.70
0.53
0.52
0.83
Table 13: NDIP-26L type C mechanical data mm
Min. Typ.
Package information
12.35
1.70
2.40
16.10
21.18
1.24
1.00
3.10
1.80
5.90
0.60
0.90
0.50
29.15
0.77
0.53
12.45
1.80
2.50
16.40
21.48
1.39
Max.
0.98
0.59
0.55
29.25
1.00
0.70
29.55
4.40
1.20
3.20
1.90
6.10
0.72
0.68
1.02
12.55
1.90
2.60
16.70
21.78
1.54
DocID018958 Rev 5 15/18
Package information
5.2 NDIP-26L packing information
Figure 8: NDIP-26L tube dimensions (dimensions are in mm)
STGIPN3H60A
Notes:
Parameter
Base quantity
Bulk quantity
Table 14: Shipping details
Value
17 pcs
476 pcs
8313150_3
16/18 DocID018958 Rev 5
STGIPN3H60A
6
Revision history
Revision history
Date Revision
Table 15: Document revision history
Changes
23-Jun-2011
09-Jan-2012
03-Jul-2012
14-Mar-2014
06-Sep-2016
1
2
3
4
5
Initial release.
Document status promoted from preliminary data to datasheet.
Added Figure 8 on page 15 .
Modified: Min. and Max. value Table 4 on page 6.
Added: Table 11 on page 12 .
Updated Figure 3: Switching time test circuit.
Updated Section 5: Package mechanical data.
Updated Section 5.1: "NDIP-26L type C package information" and
Section 5.2: "NDIP-26L packing information"
Minor text changes
DocID018958 Rev 5 17/18
STGIPN3H60A
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics
– All rights reserved
18/18 DocID018958 Rev 5
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