STGP7NC60H
Nchannel PowerMESH™ 600 V, 14 A very fast IGBT
Datasheet - obsolete product
Figure 1: Internal schematic diagram
Features
Order code V
CES
V
CE(sat) max
@ 25°C
I
C
@ 100°C
STGP7NC60H 600 V < 2.5 V 14 A
Low on-voltage drop (V
CE(sat)
)
High frequency operation up to 70 kHz
Applications
High frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
Description
This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.
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Table 1: Device summary
Order code Marking Package Packing
STGP7NC60H GP7NC60H TO-220 Tube
July 2016 DocID10855 Rev 3
This is information on a discontinued product.
1/14 www.st.com
Contents
Contents
STGP7NC60H
1 Electrical ratings ............................................................................... 3
2 Electrical characteristics ................................................................. 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ...................................................................................... 9
4 Package information ...................................................................... 10
4.1
TO-220 type A package information ................................................ 11
5 Revision history .............................................................................. 13
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STGP7NC60H
1 Electrical ratings
Symbol
V
CES
V
GE
I
C
I
CM
(2)
P
TOT
T stg
T
J
Table 2: Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0)
Gate-emitter voltage
Continuous collector current at T
C
= 25 °C (1)
Continuous collector current at T
C
= 100 °C (1)
Collector current (pulsed)
Continuous forward current at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Calculated according to the iterative formula:
𝐼
𝐶
(𝑇
𝐶
) =
𝑇
𝐽𝑀𝐴𝑋
−𝑇
𝐶
𝑅
𝑇𝐻𝐽−𝐶
×𝑉
𝐶𝐸𝑆𝐴𝑇(MAX)
(𝑇
𝐽(𝑚𝑎𝑥)
×𝐼
𝐶
(𝑇
𝐶
))
(2)
Pulse widht limited by maximum junction temperature.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Electrical ratings
Value
600
±20
25
14
50
80
- 55 to 150
Unit
V
V
A
A
A
W
°C
Value
1.56
62.5
Unit
°C/W
°C/W
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STGP7NC60H Electrical characteristics
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 4: Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
V
GE
= 0 V, I
C
= 1 mA
V
CE(sat)
Collector-emitter saturation voltage
V
GE(th)
Gate threshold voltage
I
CES
Collector cut-off current
V
GE
= 15 V, I
C
= 7 A
V
GE
= 15 V, I
C
= 7 A,
T
J
= 125 °C
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V,
T
C
=125 °C (1)
I
GES
Gate-emitter leakage current
V
CE
= 0 V, V
GE
= ±20 V
Min. Typ. Max. Unit
600
3.75
1.85 2.5
1.7
V
5.75 V
10
V
µA
1 mA
±100 nA
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic characteristics
Test conditions g
fs
(1)
C ies
C oes
C res
Q g
Q ge
Q gc
I
CL
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Turn-off SOA minimum current
V
CE
= 15 V, I
C
= 7 A
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
V
CE
= 390 V, I
C
= 7 A, V
GE
= 15 V
(see Figure 18: "Gate charge test circuit" )
V clamp
= 480 V, T j
= 150 °C,
R
G
= 10 Ω, V
GE
= 15 V
50
Min. Typ. Max. Unit
4.30 S
720
81
17 pF pF pF
48 35
7
16 nC
A
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Notes:
(1) Pulsed: Pulse duration= 300 μs, duty cycle 1.5%
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STGP7NC60H Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit Symbol t d(on)
Turn-on delay time t r(on)
Turn-on rise time di/dt
(on)
Turn-on current slope t r
( off
) Turn-off rise time t d(off)
Turn-off delay time t f
Fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t d(on)
Turn-on delay time t r(on)
Turn-on rise time di/dt
(on)
Turn-on current slope t r
( off
) Turn-off rise time t d(off)
Turn-off delay time t f
Fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy
V
CC
= 390 V, I
C
= 7 A,
V
GE
= 15 V, R
G
= 10
Ω
(see Figure 16: "Ic vs frequency"
and Figure 17:
"Test circuit for inductive load switching" )
V
CE
= 390 V, I
C
= 7 A,
V
GE
= 15 V, R
G
= 10 Ω
T
J
= 125 °C
(see Figure 17: "Test circuit for inductive load switching" )
- 18.5 ns
- 8.5 ns
-
-
-
-
- 1060 A/µs
27 ns
72 ns
60 ns
95 125 µJ
-
-
-
-
-
-
-
-
-
-
115 150 µJ
210 275 µJ
18.5
7 ns ns
1000
56
A/µs ns
116
105 ns ns
140
215
µJ
µJ
- 355 µJ
Notes:
(1)
Including the reverse recovery of the diode.
(2)
Including the tail of the collector current.
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Electrical characteristics
2.2 Electrical characteristics (curves)
Figure 2: Output characteristics
STGP7NC60H
Figure 3: Tranfer characteristics
Figure 4: Trasconductance
Figure 5: Collector-emitter on voltage vs temperature
Figure 6: Collector-emitter on voltage vs collector current
Figure 7: Normalized gate threshold vs temperature
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STGP7NC60H
Figure 8: Normalized breakdown voltage vs temperature
Electrical characteristics
Figure 9: Gate charge vs gate-emitter voltage
Figure 10: Capacitance variations
Figure 11: Total switching energy vs temperature
Figure 12: Total switching energy vs gate resistance
Figure 13: Total switching energy vs collector current
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Electrical characteristics
Figure 14: Thermal impedance
STGP7NC60H
Figure 15: Turn-off SOA
Figure 16: Ic vs frequency
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STGP7NC60H
3 Test circuits
Figure 17: Test circuit for inductive load switching
Test circuits
G
C
A A
E
B
L=100 µH
B
G
C
D.U.T
E + R
G
-
3.3
µF
1000
µF
V
CC
AM01504v 1
Figure 18: Gate charge test circuit
12 V 47 kΩ
100 nF
1 kΩ
V
CC
P
W
V i
≤ V
GMAX
2200
µF
I
G
=CONST
2.7 kΩ
47 kΩ
1 kΩ
100 Ω
D.U.T.
V
G
AM01505v1
Figure 19: Switching waveform
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Package information
4 Package information
STGP7NC60H
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
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STGP7NC60H
4.1 TO-220 type A package information
Figure 20: TO-220 type A package outline
Package information
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11/14 DocID10855 Rev 3
Package information
Dim.
L
L1
L20
L30 e1
F
H1
J1
øP
Q
D
D1
E e
A b b1 c
Table 7: TO-220 type A mechanical data mm
Typ. Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
STGP7NC60H
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
Max.
4.60
0.88
1.55
0.70
15.75
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STGP7NC60H
5
Revision history
Revision history
Date
20-Aug-2004
09-Jun-2005
Revision
1
2
Table 8: Document revision history
Changes
New datasheet.
04-Jul-2016 3
Modified title
The part number STGD7NC60HT4 has been moved to a separate datasheet.
Modified: title, features and description.
Modified: Table 2: "Absolute maximum ratings" , Table 3: "Thermal data" ,
Table 4: "Static characteristics" , Table 5: "Dynamic characteristics" and Table 6: "IGBT switching characteristics (inductive load)"
Updated: Section 5.1: "TO-220 type A package information" .
Minor text changes.
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STGP7NC60H
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