STGW30NC60KD
30 A - 600 V - short circuit rugged IGBT
Features
■
■
■
■
Low on-voltage drop (V
CE(sat)
)
Low C res
/ C ies susceptibility)
ratio (no cross conduction
Short circuit withstand time 10 µs
IGBT co-packaged with ultra fast free-wheeling diode
Applications
■
■
High frequency inverters
Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
TO-247
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
STGW30NC60KD
Marking
GW30NC60KD
Package
TO-247
Packaging
Tube
March 2008 Rev 2 1/14
www.st.com
14
3
4
5
1
2
Contents
Contents
STGW30NC60KD
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STGW30NC60KD Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
CES
I
C
(1)
I
C
(1)
I
CL
(2)
I
CP
(3)
V
GE
I
F
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at T
C
= 25 °C
Collector current (continuous) at T
C
= 100 °C
Turn-off latching current
Pulsed collector current
I
FSM
Gate-emitter voltage
Diode RMS forward current at T
C
= 25 °C
Surge non repetitive forward current t p
= 10 ms sinusoidal
P t
TOT scw
T j
Total dissipation at T
C
= 25 °C
Short circuit withstand time, V
CE
= 0.5 V
(BR)CES
T j
= 125°C, R
G
= 10
Ω, V
GE
= 12 V
Operating junction temperature
1.
Calculated according to the iterative formula:
I c
=
R thj – c
×
T
V
–
T c
) MAX )
⋅ (
T c
, I c
)
120
200
10
– 55 to 150
Value
600
60
28
125
125
±20
30
2.
V clamp
= 80%,(V
CES
), T j
=150°C, R
G
= 10
Ω, V
GE
= 15 V
3.
Pulse width limited by max. junction temperature allowed
Table 3.
Symbol
Thermal resistance
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case IGBT max.
Thermal resistance junction-case diode max.
Thermal resistance junction-ambient max
Value
0.625
1.5
50
Unit
°C/W
°C/W
°C/W
Unit
V
A
A
A
V
A
A
A
W
µs
°C
3/14
Electrical characteristics STGW30NC60KD
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
Static
Parameter Test conditions
V
(BR)CES
Collector-emitter breakdown voltage (V
GE
= 0)
I
C
= 1 mA
V
V
I
CE(sat)
I
CES
GE(th)
GES
Collector-emitter saturation voltage
Collector cut-off current
(V
GE
= 0)
Gate threshold voltage
V
GE
= 15 V, I
C
= 20 A
V
GE
= 15 V, I
C
= 20 A,
T
C
= 125 °C
V
CE
= 600 V
V
CE
= 600 V, T
C
= 125 °C
V
CE
= V
GE
, I
C
= 250 µA
Gate-emitter cut-off current (V
CE
= 0)
V
GE
= ±20 V g fs
(1)
Forward transconductance V
CE
= 15 V
,
I
C
= 20 A
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Min.
Typ.
Max. Unit
600
2.1
2.7
V
V
4.5
1.9
150
1
6.5
V
µA mA
V
±100 nA
15 S
Test conditions
V
CE
= 25 V, f = 1 MHz, V
GE
= 0
V
CE
= 480 V, I
V
GE
= 15 V
C
= 20 A,
(see Figure 18)
Min.
Typ.
Max.
Unit
2170
230
46
96
18
46 pF pF pF nC nC nC
4/14
STGW30NC60KD Electrical characteristics
Table 6.
Symbol
t r
(V off
) t d
( off
) t f
Switching on/off (inductive load)
Parameter
t d(on) t r
(di/dt) on t d(on) t r
(di/dt) on t r
(V off
) t d
( off
) t f
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
V
CC
= 480 V, I
C
= 20 A
R
G
=10
Ω, V
GE
= 15 V,
(see Figure 17)
V
CC
= 480 V, I
C
= 20 A
R
G
=10
Ω, V
GE
= 15 V,
T
C
= 125 °C
(see Figure 17)
V
CC
= 480 V, I
C
= 20 A
R
G
=10
Ω, V
GE
= 15 V,
(see Figure 17)
V cc
= 480 V, I
C
= 20 A,
R
G
= 10
Ω, V
GE
= 15 V
T
C
= 125 °C
(see Figure 17)
Min.
Typ.
Max Unit
29
12
1520
27
14
1360
36
120
85 ns ns
A/µs ns ns
A/µs ns ns ns
75
160
130 ns ns ns
Table 7.
Symbol
Switching energy (inductive load)
Parameter Test conditions
E
E
Eon off
(1)
E
Eon off
E ts ts
(1)
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 480 V, I
C
= 20 A
R
G
= 10
Ω, V
GE
= 15 V,
(see Figure 17)
V
CC
= 480 V, I
C
= 20 A
R
G
= 10
Ω, V
GE
= 15 V,
T
C
= 125 °C
(see Figure 17)
1.
Turn-off losses include also the tail of the collector current.
Min Typ.
Max Unit
350
435
785
µJ
µJ
µJ
590
845
1435
µJ
µJ
µJ
5/14
Electrical characteristics STGW30NC60KD
Table 8.
Symbol
V
F t rr
Q rr
I rrm t rr
Q rr
I rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
= 20 A
I
F
= 20 A, T
C
= 125 °C
I
F
= 20 A,V
R
= 50 V, di/dt = 100 A/
µs
(see Figure 20)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
F
= 20 A,V
R
= 50 V,
T
C
=125 °C, di/dt = 100 A/
µs
(see Figure 20)
Min.
Typ.
Max.
Unit
2.6
1.6
40
50
2.5
80
180
4.5
3.1
V
V ns nC
A ns nC
A
6/14
STGW30NC60KD
Figure 2.
Output characteristics
Electrical characteristics
Figure 3.
Transfer characteristics
Figure 4.
Transconductance Figure 5.
Collector-emitter on voltage vs temperature
Figure 6.
Gate charge vs gate-source voltage Figure 7.
Capacitance variations
7/14
Electrical characteristics STGW30NC60KD
Figure 8.
Normalized gate threshold voltage vs temperature
V
GE(th)
(norm.)
Figure 9.
Collector-emitter on voltage vs collector current
1.05
I
C
= 250 µA
0.95
0.85
0.75
-75 -25 25 75 125
T
C
Figure 10. Normalized breakdown voltage vs temperature
V
(BR)CES
(norm.)
I
C
= 1 mA
1.05
Figure 11. Switching losses vs temperature
1.00
0.95
0.90
-75 -25 25 75 125 T
C
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current
8/14
STGW30NC60KD
Figure 14. Thermal Impedance
Electrical characteristics
Figure 15. Turn-off SOA
Figure 16.
Forward voltage drop versus forward current
IFM(A)
120
110
100
90
80
70
60
50
40
30
20
10
0
0 1 2 3
VFM(V)
4
Tj=25˚C
(Maximum values)
5 6
9/14
Test circuit
3 Test circuit
Figure 17. Test circuit for inductive load switching
STGW30NC60KD
Figure 18. Gate charge test circuit
Figure 19. Switching waveforms Figure 20. Diode recovery times waveform
10/14
STGW30NC60KD
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
11/14
Package mechanical data
Dim.
e
L
D
E
A
A1 b b1 b2 c
L1
L2
øP
øR
S
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
TO-247 Mechanical data
mm.
Typ
5.45
18.50
5.50
STGW30NC60KD
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14.80
4.30
3.65
5.50
12/14
STGW30NC60KD
Table 9.
Date
Document revision history
Revision
24-Oct-2007
07-Mar-2008
1
2
Changes
Initial release
Updated
Figure 15: Turn-off SOA
Revision history
13/14
STGW30NC60KD
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