STTH6112TV
Ultrafast recovery - 1200 V diode
Main product characteristics
I
F(AV)
V
RRM
T j
V
F
(typ) t rr
(typ)
2 x 30 A
1200 V
150° C
1.30 V
45 ns
Features and benefits
■
■
■
■
■
■
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current operation
High reverse voltage capability
High junction temperature
Insulated package:
Electrical insulation = 2500 V
RMS
Capacitance < 45 pF
Description
The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.
Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.
The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.
K2 A2
Order codes
Part Number
STTH6112TV1
STTH6112TV2
A2 K1
K1 A1
STTH6112TV1
A1
K1
A2
K2
K2
A1
STTH6112TV2
A1
K2
ISOTOP
K1
A2
Marking
STTH6112TV1
STTH6112TV2
March 2006 Rev 1 www.st.com
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8
Characteristics
1 Characteristics
STTH6112TV
Table 1.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T stg
T j
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Parameter Value
Repetitive peak reverse voltage
RMS forward current
Average forward current,
δ = 0.5
T c
= 70° C per diode
Repetitive peak forward current t p
= 5 µs, F = 5 kHz square
Surge non repetitive forward current t p
= 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
1200
100
30
300
250
-65 to + 150
150
Unit
A
°C
°C
V
A
A
A
Table 2.
Thermal parameters
Symbol Parameter
R th(j-c)
Junction to case
Per diode
Total
R th(c)
Coupling thermal resistance
When the diodes are used simultaneously:
∆T j(diode1)
= P
(diode1)
x R th(j-c)
(per diode) + P
(diode2)
x R th(c)
Table 3.
Symbol
Static electrical characteristics
Parameter Test conditions
I
R
(1)
V
F
(2)
Reverse leakage current
Forward voltage drop
T j
= 25° C
T j
= 125° C
T j
= 25° C
T j
= 125° C
T j
= 150° C
T j
= 25° C
T j
= 125° C
T j
= 150° C
V
R
= V
RRM
I
F
= 25 A
I
F
= 30 A
1.
Pulse test: t p
= 5 ms,
δ < 2 %
2.
Pulse test: t p
= 380 µs,
δ < 2 %
To evaluate the conduction losses use the following equation:
P = 1.60 x I
F(AV)
+ 0.012 I
F
2
(RMS)
Min.
Value
1.16
0.63
0.1
Typ
15
1.25
1.20
1.35
1.30
Unit
°C/W
Max.
Unit
20
150
2.10
1.90
1.80
2.25
2.05
1.95
µA
V
2/8
STTH6112TV Characteristics
Table 4.
Symbol t rr
I
RM
S t fr
V
FP
Dynamic characteristics
Parameter
Reverse recovery time
Reverse recovery current
Softness factor
Forward recovery time
Forward recovery voltage
Figure 1.
Conduction losses versus average current
80
P(W)
70
60
50
40
30
20
10
0
0 5 10
δ=0.05
I
F(AV)
(A)
15
δ=0.1
20
δ=0.2
25
δ=0.5
δ =tp/T
T
30 tp
δ=1
35
Test conditions
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T j
= 25° C
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T j
= 25° C
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 30 V, T j
= 25° C
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T j
= 125° C
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T j
= 125° C
I
F
= 30 A dI
F
/dt = 100 A/µs
V
FR
= 1.5 x V
Fmax
, T j
= 25° C
I
F
= 30 A, dI
F
/dt = 100 A/µs,
T j
= 25° C
Figure 2.
Forward voltage drop versus
200
I
FM
(A)
180
160
140
120
100
80
60
40
20
0
0.0
0.5
forward current
1.0
Tj=150°C
(Maximum values)
T j j
=150°C
(Typical values)
1.5
Min.
Typ Max.
Unit
2.0
Tj= 25 °C
(Maximum values)
V
FM
(V)
2.5
57
45
25
1.5
6
3.0
115
80
65
35
550
3.5
ns
A ns
V
4.0
3/8
Characteristics STTH6112TV
800
700
600
500
400
300
Figure 3.
Relative variation of thermal impedance junction to case versus pulse duration
1.0
Z th(j-c)
/R th(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Figure 5.
Reverse recovery time versus dI
F
/dt (typical values)
Figure 4.
Peak reverse recovery current versus dI
F
/dt (typical values)
60
I
RM
(A)
55
50
45
40
35
30
25
20
15
10
5
0
0
V
R
=600V
T j
=125°C
50
I
F
= 2 x I
F(AV)
100 150 200 250 300 350 400 450 500
I
F
= 2 x I
F(AV)
I
F
=0.5 x I
F(AV)
V
R
T j
=600V
=125°C
200
0 50 100 150 200 250 300 350 400 450 500
Figure 7.
Softness factor versus dI
F
/dt
(typical values)
Figure 6.
Reverse recovery charges versus dI
F
/dt (typical values)
5
4
3
2
1
0
0
8
7
6
V
R
T j
=600V
=125°C
I
F
= 2 x I
F(AV)
I
F
= I
F(AV)
I
F
=0.5 x I
F(AV)
50 100 150 200 250 300 350 400 450 500
3.0
S factor
2.5
2.0
1.5
1.0
I
F
= 2 x I
F(AV)
V
R
=600V
T j
=125°C
0.5
0 50 100 150 200 250 300 350 400 450 500
Figure 8.
Relative variations of dynamic parameters versus junction temperature
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
I
RM
50
Q
RR
S factor
75
I
V
F
= I
F(AV)
R
=600V
Reference: T j
=125°C
100 125
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STTH6112TV Characteristics
Figure 9.
Transient peak forward voltage versus dI
F
/dt (typical values)
30
V
FP
(V)
I
F
T j
= I
F(AV)
=125°C
25
20
15
10
5
0
0
Table 5.
100 200 300 400 500
Junction capacitance versus reverse voltage applied (typical values)
1000
C(pF)
F=1MHz
V osc
=30mV
RMS
T j
=25°C
Figure 10.
Forward recovery time versus dI
F
/dt
(typical values)
1100
1000
900
800
700
600
500
400
300
200
0 100 200 300
I
F
= I
F(AV)
V
FR
= 1.5 x V
F
T j
=125°C max.
400 500
100
10
1 10 100 1000
5/8
Package information STTH6112TV
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Table 6.
ISOTOP dimensions
DIMENSIONS
REF.
Millimeters Inches
A
A1
D S
P1
B
F1
E
G2
E2
F
ØP
G1
E1
C
C2
G D1
Min.
Max
F
F1
P
P1
S
A
A1
B
C
11.80
8.90
7.8
0.75
C2
D
1.95
37.80
D1 31.50
E
E1
E2
25.15
23.85
G 14.90
G1 12.60
G2 3.50
25.50
24.15
24.80 typ.
15.10
12.80
4.30
12.20
9.10
8.20
0.85
2.05
38.20
31.70
4.10
4.60
4.00
4.00
30.10
4.30
5.00
4.30
4.40
30.30
Min.
Max.
0.161
0.181
0.157
0.157
1.185
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
1.004
0.951
0.976 typ.
0.587
0.496
0.138
0.594
0.504
0.169
0.480
0.358
0.323
0.033
0.081
1.504
1.248
0.169
0.197
0.69
0.173
1.193
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
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STTH6112TV Ordering information
Part Number
STTH6112TV1
STTH6112TV2
Marking
STTH6112TV1
STTH6112TV2
Package
ISOTOP
ISOTOP
Weight
27 g
27 g
Base qty Delivery mode
10
10
Tube
Tube
Date
02-Mar-2006
Revision
1 First issue.
Description of Changes
7/8
STTH6112TV
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