®
BDW93CFP
BDW94CFP
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
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■
■
■
■
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STMicroelectronics PREFERRED
SALESTYPES
MONOLITHIC DARLINGTON
CONFIGURATION
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
FULLY MOLDED INSULATED PACKAGE
2000 V DC INSULATION (U.L. COMPLIANT)
APPLICATIONS
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LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93CFP is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-220FP fully molded insulated package. It is intented for use in power linear and switching applications.
The complementary PNP type is the BDW94CFP.
T0-220FP
1
2
3
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 K
Ω
R
2
Typ. = 150
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
V
CBO
V
CEO
I
C
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
I
CM
P
T
I
B tot stg
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T c
≤
25 o
C
Storage Temperature
T j
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
September 2001
NPN
PNP
Value
BDW93CFP
BDW94CFP
100
100
12
15
0.2
33
-65 to 150
150
Unit
V
V
A
A
A
W o
C o
C
1/4
BDW93CFP / BDW94CFP
THERMAL DATA
R thj-case
Thermal Resistance Junction-case Max 3.8
o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
CBO
Collector Cut-off
Current (I
E
= 0)
I
CEO
Collector Cut-off
Current (I
B
= 0)
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
V
BE(sat)
∗
Base-Emitter
Saturation Voltage h
FE
∗
DC Current Gain
I
I
I
I
I
V = 100 V
V
CB
= 100 V T ca se
= 150
V
V
C
CB
CE
EB
= 80 V
= 5 V
= 100 mA
C
= 5 A I
C
= 10 A I
C
= 5 A I
C
= 10 A I
B
B
B
B
= 20 mA
= 100 mA
= 20 mA
= 100 mA
I
C
= 3 A V
CE
= 3 V
I
C
= 5 A V
CE
= 3 V
I
C
= 10 A V
CE
= 3 V
V
F
* Parallel-diode Forward
Voltage
I
F
= 5 A
I
F
= 10 A h fe
Small Signal Current
Gain
I
C
= 1 A V
CE
= 10 V f = 1 MHz
∗
Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
o
C
100
1000
750
100
20
Typ.
1.3
1.8
Max.
100
5
1
2
2
3
2.5
4
20000
2
4
Unit
µ
A mA mA mA
V
V
V
V
V
V
V
Safe Operating Area
2/4
DIM.
L6
L7
Ø
L2
L3
L4
F2
G
G1
H
A
B
D
E
F
F1
BDW93CFP / BDW94CFP
MIN.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
15.9
9
3
TO-220FP MECHANICAL DATA
mm
TYP.
16
MAX.
4.6
2.7
2.75
0.7
1
1.7
1.7
5.2
2.7
10.4
30.6
10.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
0.385
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.645
0.366
0.126
¯
L6
L7
L3
L2 L4
1 2 3
3/4
BDW93CFP / BDW94CFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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