®
BDX53BFP
SILICON POWER DARLINGTON TRANSISTOR
APPLICATIONS:
■
GENERAL PURPOSE SWITCHING AND
■
AMPLIFIER
LINEAR AND SWITCHING INDUSTRIAL
■
EQUIPMENT
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications.
T0-220FP
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P tot
V isol
T stg
T j
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (repetitive)
Base Current
Total Dissipation at T c
≤ 25 o
C
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
February 2003
R
1
Typ. = 10 K
Ω
R
2
Typ. = 150
Ω
Value
80
80
5
8
12
0.2
29
1500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V o
C o
C
1/4
BDX53BFP
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
4.3
70
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
I
CBO
CEO
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
V
V
CB
CE
= 80 V
= 40 V
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
Collector-emitter
Saturation Voltage
V
BE(sat)
∗
Base-emitter
Saturation Voltage h
FE
∗
DC Current Gain
I
I
I
V
C
C
C
EB
= 5 V
= 100 mA
= 3 A I
= 3 A I
B
B
=12 mA
=12 mA
I
C
= 3 A V
CE
= 3 V
V
F
∗
Parallel Diode Forward
Voltage
I
F
= 3 A
I
F
= 8 A
∗
Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
80
750
Typ.
1.8
2.5
0.5
2
2
2.5
2.5
o
C/W o
C/W
Max.
0.2
Unit mA mA mA
V
V
V
V
V
Safe Operating Area
2/4
DIM.
L6
L7
Ø
L2
L3
L4
F2
G
G1
H
A
B
D
E
F
F1
BDX53BFP
MIN.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
15.9
9
3
TO-220FP MECHANICAL DATA
mm
TYP.
16
MAX.
4.6
2.7
2.75
0.7
1
1.7
1.7
5.2
2.7
10.4
30.6
10.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
0.385
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.645
0.366
0.126
¯
L6
L7
L3
L2 L4
1 2 3
3/4
BDX53BFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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