BTW69-600
Datasheet
50 A 600 V SCR in TOP3 insulated
A
G
K
K
A
G
TOP3 Isolated
Product status link
BTW69-600
Product summary
I
T(RMS)
V
DRM
/V
RRM
I
GT
50 A
600 V
80 mA
Features
• Max. repetitive blocking voltage: V
DRM
, V
RRM
= 600 V
• I
GT
maximum = 80 mA
• ECOPACK ® 2 component (RoHS and HF compliance)
• Complies with UL 1557 standard (File ref : E81734)
Applications
• Solid state relays
• Welding equipment
• High power motor control
• Heating systems
• Controlled AC/DC bridge
Description
Available in a high power package TOP3-I, the BTW69-600 is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control and power converters.
This device offers a superior performance in surge current handling capabilities, allowing usage in industrial environment.
Thanks to its internal ceramic pad, it provide high voltage insulation (2500V
RMS
), complying with UL standards (file ref: E81734).
DS13092 - Rev 1 - September 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
BTW69-600
Characteristics
Characteristics
Table 1. Absolute maximum ratings
Symbol
I
T(RMS)
Parameters
RMS on-state current (180° conduction angle)
IT
(AV)
Average on-state current
(180° conduction angle)
I
TSM
Non repetitive surge peak on-state current (full cycle, T j
initial = 25 °C, V
R
= 0 V)
I 2 t dl/dt
I
GM
P
G(AV)
T stg
T j
V
GRM
V ins
I 2 t value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t r
≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Insulation RMS voltage, 1 minute t t p
= 10 ms, T
F = 60 Hz p
= 20 µs j
= 25°C t t
T c
= 75 °C
T c
= 75 °C p p
= 8.3 ms
= 10 ms
Value
50
32
610
580
1680
Unit
A
A
A
A 2 s
T j
= 125 °C 50 A/µs
T j
= 125 °C
T j
= 125 °C
8
1
A
W
-40 to +150 °C
-40 to +125 °C
5 V
2500 V
Symbol
I
GT
V
GT
V
GD
I
H
I
L dV/dt
V
TM
V
TO
R
D
I
DRM
/I
RRM
Table 2. Electrical characteristics (T j
= 25°C, unless otherwise specified)
Test conditions T j
V
D
= 12 V, R
L
= 33 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA, gate open
I
G
= 1.2 x I
GT
V
D
= 67 %, V
DRM
gate open
I
TM
= 100 A, t p
= 380 μs
Threshold on-state voltage
On-state dynamic resistance
V
D
= V
DRM
, V
R
= V
RRM
125 °C
125 °C
125 °C
125 °C
25 °C
125 °C
Max.
Max.
Min.
Max.
Max.
Max.
Min.
Max
Max
Min.
Max.
Value
8
80
1.3
0.2
150
200
1000
1.9
1.0
8.5
10
5
Unit mA
V/µs
V
V mΩ
µA mA
V
V mA mA
DS13092 - Rev 1 page 2/9
BTW69-600
Characteristics (curves)
Symbol
R th(j-c)
R th(j-a)
Table 3. Thermal resistance
Parameters
Junction to case (D.C)
Junction to ambiant (D.C)
Characteristics (curves)
1.1
Figure 1. Maximum average power dissipation versus average on-state current
30
25
20
15
10
5
0
55
50
45
40
35
0
P(W)
10
α = 180 °
IT(AV)(A)
20 30
360°
40
Value
0.9
50
Unit
°C/W
Figure 2. Average on-state current versus case temperature
60
IT(AV)(A)
50
40
30
20
10
0
0
α = 180
360°
25
°
DC
50
Tc (°C)
75 100 125
Figure 3. Relative variation of thermal impedance versus pulse duration
1.E+00
K = [Zth / Rth]
Figure 4. Relative variation of gate trigger current, holding current and latching current versus junction temperature
2.5
I
GT
,I
H
,I
L
[Tj] / I
GT
,I
H
,I
L
[Tj = 25 °C]
2.0
Z th (j-c)
I
GT
Z th (j-a)
1.E-01
1.5
1.E-02
1.E-03 1.E-01 tp(s)
1.E+01 1.E+03
1.0
0.5
0.0
-40
I
H
and I
L
10
T j
(°C)
60 110
DS13092 - Rev 1 page 3/9
BTW69-600
Characteristics (curves)
400
300
200
100
Figure 5. Surge peak on-state current versus number of cycles (V
R
= 0 V)
600
I
TSM
(A)
500
Non repetitive
Tj initial = 25 °C t=10ms
One cycle
Repetitive
Tc = 75 °C
0
1 10
Number of cycles
100 1000
Figure 6. Non repetitive surge peak on-state current for a sinusoidal pulse with width t p
< 10 ms, and corresponding value of I²t (V
R
= 0 V)
10000
I
TSM
(A) ,I t (A s)
1000
100
0.01
dI/dt limitation:
50A/µs
0.10
1.00
I
TSM
10.00
Figure 7. On-state characteristics (maximum values)
1000
ITM(A)
100
T
J
= 125 °C
10
1
0
0.0
0.5
1.0
1.5
T
J
= 25 °C
2.0
VTM(V)
2.5
3.0
3.5
4.0
R d
T
J
V max: t0
= 1 V
= 8.5 mΩ
4.5
5.0
DS13092 - Rev 1 page 4/9
2
2.1
BTW69-600
Package information
Package information
•
•
•
•
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TOP3 Ins. package information
ECOPACK® (Lead-free plating and Halogen free package compliance)
Lead-free package leads finishing
Halogen-free molding compound resin meets UL94 standard level V0
Recommended torque: 1.05 N·m (max. torque: 1.2 N·m)
Figure 8. TOP3 Isolated package outline
DS13092 - Rev 1 page 5/9
DS13092 - Rev 1
BTW69-600
TOP3 Isolated package information
Ref.
E
F
G
H
J
K
L
M
R
C
D
A
B
1. Inches given for reference only
Min.
4.40
1.45
14.35
0.50
2.70
15.80
20.40
15.10
5.40
3.40
4.08
1.20
mm
Typ.
Table 4. TOP3 Isolated mechanical data
Dimensions
Max.
4.60
1.55
15.60
0.70
2.90
16.50
21.10
15.50
5.65
3.65
4.17
1.40
Min.
0.1732
0.0571
0.5650
0.0197
0.1063
0.6220
0.8031
0.5945
0.2126
0.1339
0.1606
0.0472
4.60
Inches
(1)
Typ.
0.1811
Max.
0.1811
0.0610
0.6142
0.0276
0.1142
0.6496
0.8307
0.6102
0.2224
0.1437
0.1642
0.0551
page 6/9
3
BTW69-600
Ordering information
Ordering information
Figure 9. Ordering information scheme
BTW 69 - 600 RG
Standard SCR series
Type
69 = 50 A
Voltage
600 = 600 V
Packing mode
RG = Tube
Order code
BTW69-600RG
Marking
BTW69600
Table 5. Ordering information
Package
TOP3 Ins.
Weight
4.5 g
Base qty.
30
Delivery mode
Tube
DS13092 - Rev 1 page 7/9
Revision history
Date
09-Sep-2019
Revision
1
Table 6. Document revision history
Changes
Initial release.
BTW69-600
DS13092 - Rev 1 page 8/9
BTW69-600
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© 2019 STMicroelectronics – All rights reserved
DS13092 - Rev 1 page 9/9
