TM8050H-8D3
Datasheet
80 A 800 V high temperature thyristor (SCR) in D
3
PAK package
A
G
K
K
G
D 3 PAK
A
Product status link
TM8050H-8D3
Product summary
I
T(RMS)
V
DRM
/V
RRM
I
GT
T j
80 A
800 V
50 mA
150 °C
Features
• High junction temperature: T j
= 150 °C
• Blocking voltage: V
DRM
= V
RRM
= 800 V
• Nominal current: I
T(RMS)
= 80 A
• Gate triggering current: I
GT
max. = 50 mA
• High noise immunity: dV/dt > 1 kV/µs
• Surface mounted device D 3 PAK for compact designs
• Increase of thermal margin due to extended T j
up to 150 °C
• Low I
D
and I
R
in blocking state
• Ecopack2 (includes halogen free & RoHS compliance)
Applications
• AC-DC rectifier controlled bridge
• Motorbike voltage regulator
• Variable speed motor drive
• Battery charging system
• AC solid state relay
• By-pass switch of UPS
• Industrial welding systems
• Motor soft starter
Description
Available in power surface mount package (D 3 PAK), the TM8050H-8D3 device is an
800V SCR thyristor suitable for applications where high power switching (I
T(RMS)
= 80
A) and low power dissipation (V
TM
= 1.55 V at 160 A) are key features. These features make it ideal for motorbike voltage regulator, by-pass AC switch, controlled rectifier bridge, solid state relay, battery charger, welding equipment and motor driver applications.
DS11507 - Rev 4 - August 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
TM8050H-8D3
Characteristics
Characteristics
Symbol
I
T(RMS)
I
T(AV)
I
TSM
Table 1. Absolute maximum ratings (limiting values), T j
= 25 °C unless otherwise stated
Parameter
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
Non repetitive surge peak on-state current, V
R
= 0 V t p
= 8.3 ms t p
= 10 ms
T c
= 130 °C
T j
initial = 25 °C
T j
= 25 °C
Value
80
50
731
670
2245
800
I 2 t
V
RRM
/V
DRM dl/dt
I 2 t value for fusing
Maximum repetitive symmetric blocking voltage
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr ≤ 100 ns
Peak gate current I
GM
P
G(AV)
V
RGM
T stg
T j
T
L
Average gate power dissipation
Maximum peak reverse gate voltage
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature soldering during 10 s
F = 50 Hz T j
= 25 °C t p
= 20 µs T j
= 150 °C
T j
= 150 °C
200
Unit
A
A
A
A 2 s
V
A/µs
8
1
A
W
5 V
-40 to +150 °C
-40 to +150 °C
245 °C
Symbol
I
GT
Table 2. Electrical characteristics (T j
= 25 °C unless otherwise specified)
Test conditions
V
D
= 12 V, R
L
= 33 Ω
V
V
GT
GD
V
D
= 12 V, R
L
= 33 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA, gate open I
H
(1)
I
L t gt dV/dt t q
I
G
= 1.2 x I
GT
I
T
= 80 A , V
D
= V
DRM
, I
G
= 200 mA, dI
G
/dt = 0.2 A/μs
V
D
= 67% V
DRM
, gate open
I
T
= 33 A, dI
T
/dt = 10 A/μs, VR = 75 V,
V
D
= 400 V, dV
D
/dt = 20 V/μs, t
P
= 100 μs
1. For both polarities of A2 referenced to A1
T j
= 125 °C
T j
= 150 °C
T j
= 150 °C
Max.
Max.
Typ.
Min.
Min.
Max.
Max.
Min.
Max.
Value
2.5
50
1.5
0.2
100
125
3
1000
150
Unit mA
V
V mA mA
µs
V/µs
µs
DS11507 - Rev 4 page 2/10
TM8050H-8D3
Characteristics
Symbol
V
TM
(1)
V t0
(1)
R
D
(1)
I
DRM
, I
RRM
Table 3. Static characteristics
Test conditions
I
TM
= 160 A, t p
= 380 µs
On state threshold voltage
On state dynamic resistance
V
D
= V
DRM
= V
R
= V
RRM
= 800 V
T j
= 25 °C
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
1. For both polarities of A2 referenced to A1
Symbol
R th(j-c)
R th(j-a)
Table 4. Thermal parameters
Parameter
Junction to case (DC, max.)
Junction to ambient (DC, typ., S
CU
= 2.1 cm 2 )
Max.
Max.
Max.
Max.
Max.
Value
1.55
0.85
5.5
20
2.5
Unit
V mΩ
µA mA
Value
0.25
40
Unit
°C/W
°C/W
DS11507 - Rev 4 page 3/10
TM8050H-8D3
Characteristics (curves)
1.1
Characteristics curves
Figure 1. Maximum average power dissipation versus average on-state current
Figure 2. Average and DC on-state current versus case temperature
90
P(W)
80
70
60
50
40
30
20
10
0
0 5
α = 30°
α = 60°
α = 90°
α = 120 °
α = 180° D.C
10 15 20 25 30
I
T(AV)
(A)
35 40 45 50 55 60 65
80
70
60
50
40
30
20
10
0
0
IT(AV)(A)
α = 30°
25
α = 60°
α = 90°
α = 120°
α = 180°
50
T
C
(°C)
75 100
D.C
125 150
Figure 3. On-state characteristics (maximum values)
Figure 4. Average and DC on-state current versus ambient temperature
1000
ITM(A)
100
10
1
0.0
1.0
T j
= 25 °C
2.0
V
TM
(V)
3.0
T j
= 150 °C
V
TO
R
T j d max :
= 0.85 V
= 5.5m Ω
4.0
4.5
IT(AV)(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
α = 180°
25
D.C
50
T
A
(°C)
75 100 125 150
Figure 5. Relative variation of thermal impedance versus pulse duration
Figure 6. Thermal resistance junction to ambient versus copper surface under tab (D 3 PAK printed circuit board
FR4, copper thickness: 35 µm)
1.0E+00
K = [Zth/Rth]
Zth(j-c) 45
Rth(j-a)(°C/W)
Zth(j-a)
D3PAK
40
1.0E-01
35
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tp(s)
1.0E+02 1.0E+03
30
25
0 5 10
S
Cu
(cm²)
15 20 25 30 35 40
DS11507 - Rev 4 page 4/10
TM8050H-8D3
Characteristics (curves)
Figure 7. Surge peak on-state current versus number of cycles
Figure 8. Non repetitive surge peak on-state current for a half cycle sine pulse versus pulse width (t p
< 10 ms)
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
1
ITSM(A)
Repetitive
T c
= 130 °C
Non repetitive
T j initial = 25 °C
10
Number of cycles
100 1000
10000
ITSM(A) dI/dt limitation: 200 A/µs
1000
100
10
0.01
0.10
I
TSM t
P
(ms)
1.00
T j initial = 25 °C
10.00
Figure 9. Relative variation of holding current and latching current versus junction temperature (typical values)
2.0
IH, IL [Tj] / IH, IL [Tj = 25 °C]
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
-50
I
L
-25
I
H
0 25 50
T j
(°C)
75 100 125 150
Figure 10. Relative variation of gate trigger current and gate voltage versus junction temperature
2.0
IGT, VGT [Tj] / IGT, VGT [Tj = 25 °C]
I
GT
1.5
1.0
V
GT
0.5
0.0
-50 -25 0 25 50
T j
(°C)
75 100 125 150
Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage
1.0E+00
IDRM, IRRM [Tj, VDRM, VRRM] / IDRM, IRRM [150 °C, 800 V]
(
V
DRM
= V
RRM
= 800 V maximum values)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25 50 75
V
DRM
= V
RRM
= 600 V
(typical values)
V
DRM
= V
RRM
= 800 V
(typical values)
100
T j
(°C)
125 150
Figure 12. Relative variation of static dV/dt immunity versus junction temperature (typical values)
5 dV/dt [Tj] / dV/dt [Tj = 150 °C]
4
3
2
1
0
10 30 50 70
T j
(°C)
90
V
D
= 0.67 x V
DRM
110 130 150
DS11507 - Rev 4 page 5/10
2
2.1
TM8050H-8D3
Package information
Package information
•
•
•
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
D³PAK package information
Epoxy meets UL 94,V0
Lead-free package leads, halogen-free molding resin
Pre-conditioning moisture sensitivity MSL 1
Figure 13. D³PAK package dimension definitions
E1
A c2
E
L2
D2
D1
D3
H
D
L4
A1 c e e b
0~8°
Gauge plane
L3
L
A2
DS11507 - Rev 4 page 6/10
DS11507 - Rev 4
Ref.
D1
D2
D3
E
E1
A
A1
A2 b c c2
D
L2
L3
L4 e
H
L
TM8050H-8D3
D³PAK package information
18.70
1.70
1.00
3.80
1.45
13.80
11.80
7.50
2.90
15.85
13.30
Min.
4.90
2.70
0.02
1.15
0.40
Table 5. D³PAK package mechanical data
Millimeters
Typ.
5.45
0.25
1.61
14.00
12.10
7.80
3.20
16.05
13.60
Max.
5.10
2.90
0.25
1.45
0.65
Dimensions
Inches (dimension in inches are given for reference only)
Typ.
0.0571
0.5433
0.4646
0.2953
0.1142
0.6240
0.5236
Min.
0.1929
0.1063
0.0008
0.0453
0.0157
0.0634
0.5512
0.4764
0.3071
0.1260
0.6319
0.5354
Max.
0.2008
0.1142
0.0098
0.0571
0.0256
0.2146
19.10
2.00
1.15
0.7362
0.0669
0.0394
0.7520
0.0789
0.0453
0.0098
4.10
0.1496
0.1614
Figure 14. Minimum footprint (dimensions in mm)
16.1
13
3.7
20.1
1.9
10.9
page 7/10
3
TM8050H-8D3
Ordering information
Ordering information
Figure 15. Ordering information scheme
TM 80 50 H - 8 D3 - TR
Series
Thyristor
RMS current
80 = 80 A
I
GT
current
50 = 50 mA
Maximum junction temperature
H = 150 °C
Voltage
8 = 800 V
Package
D
3
= D
3
PAK
Tape and reel
Order code
TM8050H-8D3-TR
Table 6. Ordering information
Marking
TM8050H8
Package
D 3 PAK
Weight
4.2 g
Base qty.
400
Delivery mode
Tape and reel
DS11507 - Rev 4 page 8/10
TM8050H-8D3
Revision history
Date
11-Feb-2016
01-Apr-2016
02-May-2016
30-Jul-2019
Table 7. Document revision history
Revision
1
2
3
4
Changes
Initial release.
Updated Table 3: "Electrical characteristics (T j
= 25 °C unless otherwise specified)".
Updated Thermal parameters.
Updated
Table 1
, Figure 8
and
Figure 9 . Minor text change.
DS11507 - Rev 4 page 9/10
TM8050H-8D3
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© 2019 STMicroelectronics – All rights reserved
DS11507 - Rev 4 page 10/10
