BTW69-1200N
G
A
K
A
K
A
G
TOP3 non insulated
50 A – 1200 V non insulated SCR thyristor
Datasheet
-
production data
Description
Available in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications where power switching and power dissipation are critical, such as by-pass switch, controlled AC rectifier bridge, in solid state relay, battery charger, uninterruptible power supply, welding equipment and motor driver applications.
Based on a clip assembly technology, the
BTW69-1200N offers a superior performance in surge current handling and thermal cooling capabilities.
Table 1. Device summary
Symbol Value
I
T(RMS)
V
DRM
/V
RRM
I
GT
50 A
1200 V
50 mA
Features
On-state rms current: 50 A
Blocking voltage: 1200 V
Gate current: 50 mA
Applications
Solid state relay
Battery charging system
Uninterruptible power supply
Variable speed motor drive
Industrial welding systems
By pass AC switch
June 2013
This is information on a product in full production.
DocID024685 Rev 1 1/9 www.st.com
Characteristics
1 Characteristics
BTW69-1200N
Symbol
Table 2. Absolute maximum ratings (limiting values)
Parameter Value Unit
I
T(RMS)
IT
(AV)
P
I
I
TSM dI/dt
G(AV)
T stg
V
I
²
GM
T j t
GM
I
On-state current rms (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current
² t Value
T c
= 102 °C
T c
= 102 °C t p
= 8.3 ms t p
= 10 ms
T j
= 25 °C t p
= 10 ms T j
= 25 °C
50
31
763
700
2450
Critical rate of rise of on-state current
Gate supply: I
G
= 100 mA, dI
G
/dt = 1 A/µs
Peak gate current
Average gate power dissipation t p
= 20 µs T j
= 125 °C
T j
= 125 °C
Storage junction temperature range
Operating junction temperature range
100
8
1
- 40 to + 150
- 40 to + 125
Maximum peak reverse gate voltage 5
A
A
A
A
2
S
A/µs
A
W
°C
V
Table 3. Electrical characteristics (T j
= 25 °C, unless otherwise specified)
Symbol Test conditions Value Unit
I
GT
V
D
= 12 V, R
L
= 33
V
GT
V
GD
I
H
I
L
I
V
T
D
= V
DRM,
R
L
= 3.3 k
= 500 mA, gate open
T j
= 125 °C
I
G
= 1.2 x I
GT t gt
I
T
= 50 A, V
D
= V
DRM
, I
G
= 200 mA, dI dV/dt V
D
= 67% V
DRM,
gate open
G
/dt = 0.2 A/µs
T j
= 125 °C
I
I
V t q
TM
V t0
R
D
DRM
RRM
V
D
= 800 V, I
TM
= 50 A, V
R
= 75 V, t p
= 100 µs, dI
TM
/dt = 30 A/µs, dV
D
/dt = 20 V/µs
I
TM
= 100 A, t p
= 380 µs
Threshold voltage
Dynamic resistance
V
V
D
R
= V
= V
DRM
RRM
T
T
T j j j
= 125 °C
= 25 °C
= 125 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
MIN.
MAX.
MAX.
MIN.
MAX.
TYP.
TYP.
MIN.
TYP.
MAX.
MAX.
MAX.
MAX.
8
50
1.3
0.2
100
125
2
1000
100
1.6
0.9
8.5
10
5 mA
V
V mA mA
µs
V/µs
µs
V
V m
µA mA
2/9 DocID024685 Rev 1
BTW69-1200N Characteristics
Symbol
R th(j-c)
R th(j-a)
Junction to case (DC, typ.)
Junction to ambient (DC)
Table 4. Thermal resistance
Parameter Value
0.45
50
Unit
°C/W
°C/W
Figure 1. Maximum average power dissipation versus average on-state current
55
P(W)
50
45
40
35
30
25
20
15
10
5
0
0 5 10 a = 30°
15 a = 60° a = 90° a = 120° a = 180°
I T(AV) (A)
20 25 30 35 a
360°
DC
40
50
40
Figure 2. Correlation between maximum average power dissipation and maximum allowable temperatures
P
(AV)
(W)
30
20
10
R
TH
(assembly)
0 °C/W
1 °C/W
2 °C/W
3 °C/W a = 180°
T a
(°C)
T c
(°C)
100.2
102.7
105.2
107.7
110.2
112.7
115.2
117.7
120.2
122.7
0
0 25 50 75 100 125
Figure 3. Average and DC on-state current versus case temperature
55
50
I
T(AV)
(A)
20
15
10
5
0
0
45
40
35
30
25 a = 180° a = 30°
25 a = 60° a = 90° a = 120°
50
T case
(°C)
DC
75 100 125
Figure 4. Average and DC on-state current versus ambient temperature
1.0
0.5
0.0
0
3.0
I
T(AV)
(A)
DC
2.5
a = 180°
2.0
1.5
25 50 75 100 125
DocID024685 Rev 1 3/9
9
Characteristics BTW69-1200N
1.0E+00
1.0E-01
Figure 5. Relative variation of thermal impedance versus pulse duration
Z th(j-c)
Z th(j-a)
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 6. Relative variation of gate trigger current and gate trigger voltage versus junction temperature (typical value)
1.8
I
GT
,V
GT
[T ] / I
GT
,V
GT
[T =25°C]
1.5
1.3
1.0
V
GT
I
GT
0.8
0.5
0.3
0.0
-40 -20 0 20 40 60 80 100 125
Figure 7. Relative variation of holding, and latching currents versus junction temperature
(typical values)
Figure 8. Surge peak on-state current versus number of cycles
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
-40
I
H
-20
I
L
600
I
TSM
(A)
550
500
450
400
350
300
250
200
150
100
50
0
Repetitive
T
C
=102°C
1
Non repetitive
T j initial=25 °C
10
One cycle
Number of cycles
100 1000
0 20 40 60 80 100 125
Figure 9. Non repetitive surge peak on-state current and corresponding value of I
2 t versus sinusoidal pulse
Figure 10. On-state characteristics (maximum values)
10000
2 2
I
TSM
(A), I t (A s) dI/dt limitation: 100 A/µs T j initial=25 °C
I²t
1000
I
TM
(A)
I
TSM
1000
100
100
10
0.01
0.10
1.00
10.00
10
1
0.0
T j
=125 °C
1.0
T j
=25 °C
2.0
V
TM
(V)
3.0
R
V to d
T j max :
= 0.9 V
= 8.5 mW
4.0
4/9 DocID024685 Rev 1
BTW69-1200N
1.0E-01
V
DRM
=V
RRM
=800 V 1.0E-01
Characteristics
Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage (600 and 800 V)
Figure 12. Relative variation of leakage current versus junction temperature for different values of blocking voltage (1000 and 1200 V)
1.0E+00
I
DRM,
I
RRM
[Tj;V
DRM,
V
RRM
] / I
DRM,
I
RRM
1.0E+00
I
DRM,
I
RRM
[Tj;V
DRM,
V
RRM
] / I
DRM,
I
RRM
V
DRM
=V
RRM
=1200 V
1.0E-02
1.0E-03
1.0E-04
25 50 75
V
DRM
=V
RRM
=600 V
1.0E-02
1.0E-03
100
T j
(°C)
125
1.0E-04
25 50 75
V
DRM
=V
RRM
=1000 V
100
T j
(°C)
125
DocID024685 Rev 1 5/9
9
Package information BTW69-1200N
Epoxy meets UL94,V0
Lead-free packages
Cooling method: by conduction (C)
Recommended torque value: 0.9 to 1.2 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Figure 13. TOP3 dimension definitions
H A
R
ØL
B
K
F
G
P
C
J J
E
D
6/9 DocID024685 Rev 1
BTW69-1200N
Ref.
F
G
D
E
H
A
B
C
J
K
ØL
P
R
Package information
Min.
4.4
1.45
14.35
0.5
2.7
15.8
20.4
15.1
5.4
3.4
4.08
1.20
Table 5. TOP3 dimension values
Dimensions
Millimeters
Max.
4.6
1.55
15.60
0.7
2.9
16.5
21.1
15.5
5.65
3.65
4.17
1.40
Min.
0.173
0.057
0.565
0.020
0.106
0.622
0.815
0.594
0.213
0.134
0.161
0.047
4.60 typ.
Inches
0.181 typ.
Max.
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.144
0.164
0.055
DocID024685 Rev 1 7/9
9
Ordering information BTW69-1200N
Figure 14. Ordering information scheme
Standard SCR series
Type
69 = 50 A
Voltage
1200 = 1200 V
Package
N = TOP3 non insulated
BTW 69 - 1200 N
Order code
BTW69-1200N
Table 6. Ordering information
Marking Package Weight Base qty Delivery mode
BTW691200N TOP3 4.55 g 30 Tube
Date
14-Jun-2013
Revision
Table 7. Document revision history
Changes
1 Initial release.
8/9 DocID024685 Rev 1
BTW69-1200N
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