VN16BSP
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
Table 1. General Features
Type
VN16BPS
V
DSS
40 V
R
DS(on)
0.06
Ω
I
OUT
5.6 A
V
CC
26 V
■
■
MAXIMUM CONTINUOUS OUTPUT
CURRENT: 20 A @ T c
= 85°C
5V LOGIC LEVEL COMPATIBLE INPUT
■ THERMAL SHUT-DOWN
■ UNDER VOLTAGE PROTECTION
■ OPEN DRAIN DIAGNOSTIC OUTPUT
■ INDUCTIVE LOAD FAST DEMAGNETIZATION
■ VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN16BPS is a monolithic device made using
STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from over temperature and short circuit.
The open drain diagnostic output indicates: open load in off state and in on state, output shorted to
V
CC
and overtemperature. Fast demagnetization of inductive loads is achieved by negative (-18V) load voltage at turn-off.
Figure 1. Package
10
1
PowerSO-10
Table 2. Order Codes
Package
PowerSO-10
Tube
VN16BSP
Tape and Reel
VN16BSP13TR
September
20
13
REV.
3
1/11
VN16BSP
Figure 2. Block Diagram
Table 3. Absolute Maximum Ratings
Symbol Parameter
V
(BR)DSS
Drain-Source Breakdown Voltage
I
OUT
Output Current (cont.) at T c
= 85 °C
I
OUT
(RMS) RMS Output Current at T c
= 85 °C
I
I
R
IN
– V
CC
Reverse Output Current at T c
= 85 °C (f > 1Hz)
Input Current
Reverse Supply Voltage
I
STAT
V
ESD
P tot
T j
T stg
Status Current
Electrostatic Discharge (1.5 k
Ω
, 100 pF)
Power Dissipation at T c
=
25 °C
Junction Operating Temperature
Storage Temperature
Value
40
20
20
–20
±10
–4
±10
2000
82
-40 to 150
-55 to 150
Unit
V
A
A
A mA
V mA
V
W
°C
°C
2/11
Figure 3. Connection Diagrams
Figure 4. Current and Voltage Conventions
VN16BSP
Table 4. Thermal Data
Symbol Parameter
R thj-case
Thermal Resistance Junction-case Max
R thj-amb
Thermal Resistance Junction-ambient
(1)
Max
Note: 1. When mounted using minimum recommended pad size on FR-4 board.
Value
1.5
50
Unit
°C/W
°C/W
3/11
VN16BSP
ELECTRICAL CHARACTERISTICS
(8 < V
CC
< 16 V; -40
≤
T j
≤
125 °C unless otherwise specified)
Table 5. Power
Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit
V
CC
Supply Voltage 6 13 26 V
I n
(2) Nominal Current T c
= 85 °C; V
DS(on)
≤
0.5; V
CC
= 13 V 5.6
8.8
A
V
R on
I
S
DS(MAX)
R j
On State Resistance
Supply Current
Maximum Voltage Drop
Output to GND Internal
Impedance
I
I
OUT
= In; V
CC
= 13 V; T j
= 25 °C
Off State; V
T
OUT j
= 25 °C
CC
= 20 A; V
= 13 V; T
CC j
≥
= 13 V; T
25 °C c
= 85 °C
0.038
1
5
25
10
0.06
50
1.8
20
Ω
µA
K
V
Ω
Note: 2. In= Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at T c
= 85 °C for battery voltage of 13V which produces a voltage drop of 0.5 V.
Table 6. Switching
Symbol Parameter t t d(on)
(3) t r
(3) d(off)
(3)
Turn-on Delay Time Of
Output Current
Rise Time Of Output
Current
Turn-off Delay Time Of
Output Current t f
(3) Fall Time Of Output
Current
Turn-on Current Slope (di/dt) on
(di/dt) off
Turn-off Current Slope
V demag
Inductive Load Clamp
Voltage
Note: 3. See Switching Time Waveforms.
R load
= 1.6
Ω
Test Conditions
R load
= 1.6
Ω
R load
= 1.6
Ω
R load
= 1.6
Ω
R load
= 1.6
Ω;
V
CC
= 13 V
R load
= 1.6
Ω;
V
CC
= 13 V
R load
= 1.6
Ω;
L = 1 mH
Min.
Typ.
Max.
Unit
5 50 500 µs
40
10
40
100
100
100
0.008
0.008
–24 –18
680
500
680
0.1
0.1
–14
µs
µs
µs
A/µs
A/µs
V
Table 7. Logic Input
Symbol
V
IL
Parameter
Input Low Level Voltage
Test Conditions Min.
Typ.
Max.
Unit
1.5
V
V
IH
V
I(hyst)
I
IN
Input High Level Voltage
Input Hysteresis Voltage
3.5
0.2
1
Note 4
1.5
V
V
Input Current V
IN
= 5 V; T j
= 25 °C 100 µA
V
ICL
Input Clamp Voltage I
IN
= 10 mA
I
IN
= –10 mA
5 6
–0.7
7 V
V
Note: 4. The V
IH
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin.
4/11
VN16BSP
ELECTRICAL CHARACTERISTICS (cont’d)
Table 8. Protection and Diagnostics (cont’d)
Symbol Parameter
Status Voltage Output Low
Test Conditions
I
STAT
= 1.6 mA
V
STAT
V
USD
Under Voltage Shut Down
V
SCL
Status Clamp Voltage I
STAT
= 10 mA
I
STAT
= –10 mA
T
TSD
Thermal Shut-down Temperature
T
SD(hyst.)
Thermal Shut-down Hysteresis
T
R
V
OL
(5)
Reset Temperature
Open Voltage Level
Open Load Current Level
I
OL t povl
(6) Status Delay t pol
(6) Status Delay
Note: 5. I
OL(off)
= (V
CC
-V
OL
)/R
OL
(see figure 5).
6. t povl
t pol
: ISO definition (see figure 6).
Off-State
On-State
Figure 5. Note 5 relevant figure Figure 6. Note 6 relevant figure
Min.
Typ.
Max.
Unit
0.4
V
3.5
5
5
6
–0.7
140 160
15
125
2.5
3.8
6
7
180
50
0.15
5
0.85
V
V
V
°C
°C
°C
V
A
µs
50
5 10
400 2500 µs
5/11
VN16BSP
Figure 7. Switching Time Waveforms
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which indicates open load in on-state, open load in offstate, over temperature conditions and stuck-on to
V
CC
.
From the falling edge of the input signal, the status output, initially low to signal a fault condition
(overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 °C. When this temperature returns to 125°C the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located inside the Power MOS area. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (V demag
) of -
18V. This function allows to greatly reduces the power dissipation according to the formula:
P dem
= 0.5 • L load
• (I load
)
V demag
] • f
2
• [(V
CC
+V demag
)/ where f = switching frequency and
V demag
= demagnetization voltage
The maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed V
CC
, V demag
and f according to the above formula. In this device if the
GND pin is disconnected, with V
CC
not exceeding
16V, it will switch off.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit
(Figure 10).
The consequences of the voltage drop across this diode are as follows:
– If the input is pulled to power GND, a negative voltage of -V f
is seen by the device. (V
IL
, V thresholds and V
STAT are increased by V f respect to power GND).
IH
with
– The undervoltage shutdown level is increa- sed by V f
.
If there is no need for the control unit to handle external analog signals referred to the power
GND, the best approach is to connect the reference potential of the control unit to node [1]
(see application circuit in Figure 10), which becomes the common signal GND for the whole control board avoiding shift of V
IH
, V
IL
and V
STAT
.
This solution allows the use of a standard diode.
6/11
Table 9. Truth Table
Normal Operation
Over-temperature
Under-voltage
Short load to V
CC
Open Circuit
Note: 7. With an additional external resistor.
Figure 8. Waveforms
X
H
L
H
L
Input
L
H
X
Output
L
H
L
L
H
H
H
L
VN16BSP
Diagnostic
H
H
L
H
L
L
L
L
(7)
7/11
VN16BSP
Figure 9. Over Current Test Circuit
Figure 10. Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 11. Typical Application Circuit With Separate Signal Ground
8/11
PACKAGE MECHANICAL
Table 10. Power SO-10 Mechanical Data
Symbol
A
A
(8)
A1
B
B
(8)
C
C
(8)
D
D1
E
E2
E2
(8)
E4
E4
(8) e
F
F
(8)
H
H
(8) h
L
F
(8) a
α (8)
Note: 8.
Muar only POA P013P .
1.25
1.20
13.80
13.85
1.20
0.80
0º
2º
Min
3.35
3.4
0.00
0.40
0.37
0.35
0.23
9.40
7.40
9.30
7.20
7.30
5.90
5.90
Figure 12. Power SO-10 Package Dimensions
H E
A
F
A1 h millimeters
Typ
1.27
0.50
B
0.10 A B
10
E2
1 e
0.25
D
D1
= =
B DETAIL "A"
SEATING
PLANE
A
C
E4
DETAIL "A"
α
SEATING
PLANE
A1
L
P095A
Note: Drawing is not to scale.
VN16BSP
1.35
1.40
14.40
14.35
1.80
1.10
8º
8º
Max
3.65
3.6
0.10
0.60
0.53
0.55
0.32
9.60
7.60
9.50
7.60
7.50
6.10
6.30
9/11
VN16BSP
Date
12-Mar-1988
18-Jun-2004
23-Sep-2013
Table 1. Document revision history
Revision Changes
1
2
3
Initial release.
Stylesheet update.
Updated Disclaimer
Revision history
DocID1088 Rev 3 10/11
7
VN16BSP
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