STPSC4H065DLF
Datasheet
650 V power Schottky silicon carbide diode
Product status link
STPSC4H065DLF
Product summary
Symbol Value
I
F(AV)
V
RRM
V
F(typ.)
T
j(max.)
4 A
650 V
1.38 V
175 °C
Product label
Features
• Less than 1 mm height package
• High creepage package
• No or negligible reverse recovery
• Temperature independent switching behavior
• High forward surge capability
• Low drop forward voltage
• Power efficient product
• ECOPACK2 compliant component
Applications
• Switch mode power supply
• Boost PFC
• Bootstrap diode
• LLC clamping function
• High frequency inverter applications
Description
This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC4H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.
DS12819 - Rev 2 - March 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STPSC4H065DLF
Characteristics
Characteristics
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Parameter
T j
= -40 °C to + 175 °C Repetitive peak reverse voltage
Forward rms current
Average forward current
Value
650
11
4
Surge non repetitive forward current
T c
= 140 °C (1) , DC
t p
= 10 ms sinusoidal, T c
= 25 °C t p
= 10 ms sinusoidal, T c
= 125 °C t p
= 10 µs square, T c
= 25 °C
T c
= 140 °C (1) , T
j
= 175 °C, δ = 0.1
38
35
400
I
FRM
T stg
T j
Repetitive peak forward current
Storage temperature range
Operating junction temperature range
1. Value based on R th(j-c)
max.
17
-55 to +175
-40 to +175
Unit
V
A
A
A
A
°C
°C
Symbol
R th(j-c)
Table 2. Thermal resistance parameters
Parameter
Junction to case
Typ. value
2.6
Max. value
3.9
Unit
°C/W
Symbol
I
R
(1)
V
F
(2)
Parameter
Reverse leakage current
Forward voltage drop
Table 3. Static electrical characteristics
Test conditions
T j
= 25 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
V
I
R
F
= V
RRM
= 4 A
1. t p
= 10 ms, δ < 2%
2. t p
= 500 μs, δ < 2%
Min.
-
-
-
-
To evaluate the conduction losses, use the following equation:
P = 1.00 x I
F(AV)
+ 0.237 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses:
• AN604 : Calculation of conduction losses in a power rectifier
• AN4021 : Calculation of reverse losses on a power diode
Typ.
3
35
1.38
1.60
Max.
40
170
1.55
1.95
Unit
µA
V
DS12819 - Rev 2 page 2/12
Symbol
Q cj
(1)
C j
Parameter
Total capacitive charge
Total capacitance
Table 4. Dynamic electrical characteristics
Test conditions
V
R
= 400 V
V
R
= 0 V, T c
= 25 °C, F = 1 MHz
V
R
= 400 V, T c
= 25 °C, F = 1 MHz
1. Most accurate value for the capacitive charge:
VR
Qcj VR = ∫ Cj V dV
STPSC4H065DLF
Characteristics
Typ.
14.3
245
25
Unit nC pF
DS12819 - Rev 2 page 3/12
STPSC4H065DLF
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Forward voltage drop versus forward current
(typical values, low level)
8
I
F
(A)
Pulse test : t p
=500µs
7
6
5
4
3
2
1
0
0.0
0.5
T a
=25 °C
T a
=100 °C
1.0
1.5
2.0
T a
=150 °C
T a
=175 °C
2.5
V
F
(V)
3.0
Figure 2. Forward voltage drop versus forward current
(typical values, high level)
20
16
12
8
4
0
0
40
36
32
28
24
I
F
(A)
Pulse test : t p
=500µs
T a
=25 °C
T a
=100 °C
T a
=150 °C
1 2 3
T a
=175 °C
4 5
V
F
(V)
6
Figure 3. Reverse leakage current versus reverse voltage applied (typical values)
Figure 4. Peak forward current versus case temperature
1.E+02
I
R
(µA)
40
I
M
(A)
δ=0.1
T
T j
=175 °C
30
δ =tp/T tp
1.E+01
T j
=150 °C
1.E+00
20
δ=0.3
δ=0.5
1.E-01
T j
=25 °C
V
R
(V)
1.E-02
100 150 200 250 300 350 400 450 500 550 600 650
10
δ=1 δ=0.7
0
0 25 50 75
T
C
(°C)
100 125 150 175
DS12819 - Rev 2 page 4/12
STPSC4H065DLF
Characteristics (curves)
Figure 5. Junction capacitance versus reverse voltage applied (typical values)
250
C (pF)
200
V
F=1 MHz
OSC
=30 mV
T j
=25 °C
RMS
150
100
50
0
0.1
1.0
V
R
(V)
10.0
100.0
1000.0
Figure 6. Relative variation of thermal impedance junction to case versus pulse duration
Z th(j-c)
/R th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 t p
(s)
1.E+00
Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)
1.E+03
I
FSM
(A)
1.E+02
1.E+01
1.E-05 1.E-04
T a
=25 °C
T a
=125 °C
1.E-03 t p
(s)
1.E-02
Figure 8. Total capacitive charges versus reverse voltage applied (typical values)
10
8
6
4
2
0
0
16
Q
Cj
(nC)
14
12
50 100 150 200 250 300
V
R
(V)
350 400
DS12819 - Rev 2 page 5/12
2
2.1
STPSC4H065DLF
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
•
•
PowerFLAT 8x8 HV package information
Epoxy meets UL94, V0
Lead-free Package
Figure 9. PowerFLAT 8x8 HV package outline
DS12819 - Rev 2 page 6/12
Ref.
E2 e
L
E
D2
E1
A
A1
A3 b
D
STPSC4H065DLF
PowerFLAT 8x8 HV package information
Table 5. PowerFLAT 8x8 HV mechanical data
Min.
0.75
0.00
0.10
0.90
7.90
7.90
7.10
2.65
4.25
0.40
Dimensions (in mm)
Typ.
0.85
0.20
1.00
8.00
8.00
7.20
2.75
4.35
2.00
0.50
Figure 10. PowerFLAT 8x8 HV footprint
Max.
0.95
0.05
0.30
1.10
8.10
8.10
7.30
2.85
4.45
0.60
Note: All dimensions are in millimeters.
DS12819 - Rev 2 page 7/12
2.2
PowerFLAT 8x8 HV packing information
Figure 11. PowerFLAT 8x8 HV tape
P2 (2.0±0.1) P0 (4.0±0.1)
T (0.30±0.05) D0 ( 1.55±0.05)
STPSC4H065DLF
PowerFLAT 8x8 HV packing information
E (1.75±0.1)
D1 ( 1.5 Min)
K0 (1.10±0.1)
P1 (12.00±0.1) A0 (8.30±0.1)
Note: All dimensions are in millimeters.
Figure 12. PowerFLAT 8x8 HV package orientation in carrier tape
DS12819 - Rev 2 page 8/12
Note: All dimensions are in millimeters.
Figure 13. PowerFLAT 8x8 HV reel
STPSC4H065DLF
PowerFLAT 8x8 HV packing information
DS12819 - Rev 2 page 9/12
3
STPSC4H065DLF
Ordering Information
Ordering Information
Order code
STPSC4H065DLF
Marking
PSC4H065
Table 6. Ordering information
Package
PowerFLAT 8x8 HV
Weight
170 mg
Base qty.
3000
Delivery mode
Reel
DS12819 - Rev 2 page 10/12
Revision history
Date
29-Nov-2018
31-Mar-2021
Table 7. Document revision history
Version
1
2
Changes
Initial release.
Inserted STPOWER logo and unpdated Table 6 .
STPSC4H065DLF
DS12819 - Rev 2 page 11/12
STPSC4H065DLF
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DS12819 - Rev 2 page 12/12
