STMicroelectronics STD22NF06AG Datasheet
Advertisement
Advertisement
STD22NF06AG
Automotive-grade N-channel 60 V, 32 mΩ typ., 24 A
STripFET™ II Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD22NF06AG
V
DS
60 V
R
DS(on)
max.
40 mΩ
I
D
24 A
Figure 1: Internal schematic diagram
G(1)
D(2, TAB)
Order code
STD22NF06AG
S(3)
AEC-Q101 qualified
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
Applications
Switching applications
AM01475v1_Tab
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Table 1: Device summary
Marking
D22NF06
Package
DPAK
Packing
Tape and reel
October 2016 DocID029908 Rev 1
This is information on a product in full production.
1/16 www.st.com
Contents
Contents
STD22NF06AG
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
Electrical characteristics (curves) ...................................................... 6
4 Package information ....................................................................... 9
DPAK (TO-252) type A2 package information................................. 10
DPAK packing information .............................................................. 13
5 Revision history ............................................................................ 15
2/16 DocID029908 Rev 1
STD22NF06AG
1 Electrical ratings
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
P
TOT
E
T j
T stg
Table 2: Absolute maximum ratings
Parameter
Drain-source voltage
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature range
Storage temperature range
Notes:
(1) Pulse width limited by safe operating area.
(2) I
SD
≤ 24A, di/dt ≤100A/μs, V
DD
=V
(BR)DSS,
Tj ≤ T
JMAX
(3) Starting Tj = 25 °C, I
D
= 10 A, V
DD
= 45 V.
Symbol
R thj-case
R
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1) When mounted on a 1-inch² FR-4 board, 2oz Cu.
Electrical ratings
Value
60
60
±20
24
17
96
60
10
300
- 55 to 175
Unit
V
V
V
A
A
A
W
V/ns mJ
°C
Value
2.5
50
Unit
°C/W
°C/W
DocID029908 Rev 1 3/16
Electrical characteristics
2
STD22NF06AG
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4: On/off states
Test conditions Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
I
DSS
Zero gate voltage drain current
I
GSS
Gate body leakage current(V
DS
= 0)
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on- resistance
V
GS
= 0, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0
V
DS
= 60 V, V
GS
= 0
T
C
V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 12 A
Min. Typ. Max. Unit
60
1
V
µA
10 µA
2
32
±100 nA
4 V
40 mΩ
Notes:
(1) Defined by design,not subject to production test
Symbol Parameter g
Forward transconductance
C iss
Input capacitance
C oss
Output capacitance
C rss
Reverse transfer capacitance t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Q g
Q gs
Fall time
Total gate charge
Gate-source charge
Q gd
Gate-drain charge
Table 5: Dynamic
Test conditions
V
V
V
V
V
DS
DS
GS
DD
R
G
= 25 V, I
D
= 12 A
= 25 V, f = 1 MHz,
= 0 V
(see for resistive load switching times" )
DD
= 30 V, I
= 4.7 Ω V
= 30 V, I
D
D
= 10 A
GS
= 10 V
= 20 A,
V
GS
= 10 V, R
G
= 4.7 Ω
(see Figure 15: "Test circuit for gate charge behavior"
Min. Typ. Max. Unit
-
-
-
-
-
-
-
-
-
-
15
690
170
68
10
30
30
8
23
5
-
-
-
31
-
S pF pF pF ns ns ns ns nC nC
- 7.5 - nC
Notes:
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
4/16 DocID029908 Rev 1
STD22NF06AG
Symbol Parameter
V
Forward on voltage t r
Reverse recovery time t d(off)
Reverse recovery charge t f
Table 6: Source drain diode
Test conditions
I
SD
Source-drain current
I
Source-drain current (pulsed)
Reverse recovery current
I
I
SD
= 24 A, V
GS
= 0 V
SD
V
= 20 A, di/dt = 100 A/μs
DD
= 30 V, T
j
= 150 °C
Figure 16: "Test circuit for inductive load switching and diode recovery times"
Electrical characteristics
Min. Typ. Max. Unit
- 24
96
A
A
-
-
65
150
1.5
-
-
V ns nC
- 4.6 - A
Notes:
(1) Pulse width limited by safe operating area.
(2) Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
DocID029908 Rev 1 5/16
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STD22NF06AG
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Transconductance Figure 7: Static drain-source on-resistance
6/16 DocID029908 Rev 1
STD22NF06AG
Figure 8: Gate charge vs. gate-source voltage
Electrical characteristics
Figure 9: Capacitance variations
Figure 10: Normalized gate threshold voltage vs. temperature
Figure 11: Normalized on-resistance vs. temperature
Figure 12: Source-drain diode forward characteristics
Figure 13: Normalized breakdown voltage vs. temperature
DocID029908 Rev 1 7/16
Test circuits
3 Test circuits
Figure 14: Test circuit for resistive load switching times
STD22NF06AG
Figure 15: Test circuit for gate charge behavior
Figure 16: Test circuit for inductive load switching and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform
8/16 DocID029908 Rev 1
STD22NF06AG
4 Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID029908 Rev 1 9/16
Package information
4.1 DPAK (TO-252) type A2 package information
Figure 20: DPAK (TO-252) type A2 package outline
STD22NF06AG
10/16 DocID029908 Rev 1
0068772_type-A2_rev21
STD22NF06AG
Dim. c2
D
D1
E
E1 e e1
H
A
A1
A2 b b4 c
L
L1
L2
L4
R
V2
Package information
Table 7: DPAK (TO-252) type A2 mechanical data mm
Min.
0.48
6.00
4.95
6.40
5.10
2.16
4.40
9.35
2.20
0.90
0.03
0.64
5.20
0.45
1.00
2.60
0.65
0.60
0°
Typ.
5.10
5.20
2.28
2.80
0.80
0.20
Max.
0.60
6.20
5.25
6.60
5.30
2.40
4.60
10.10
2.40
1.10
0.23
0.90
5.40
0.60
1.50
3.00
0.95
1.00
8°
DocID029908 Rev 1 11/16
Package information STD22NF06AG
Figure 21: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm)
12/16 DocID029908 Rev 1
STD22NF06AG
4.2 DPAK packing information
Figure 22: DPAK (TO-252) tape outline
Package information
DocID029908 Rev 1 13/16
Package information
Figure 23: DPAK (TO-252) reel outline
STD22NF06AG
14/16
Dim.
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
E
F
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
Table 8: DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
1.85
7.6
2.75
4.1
8.1
2.1
A
B
C
D
G
N
T
Base qty.
Bulk qty.
Min.
1.5
12.8
20.2
16.4
50
0.35
16.3 mm
Max.
330
13.2
2500
2500
18.4
22.4
DocID029908 Rev 1
STD22NF06AG
5
Revision history
Revision history
Date
25-Oct-2016
Table 9: Document revision history
Revision
1 First version.
Changes
DocID029908 Rev 1 15/16
STD22NF06AG
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics – All rights reserved
16/16 DocID029908 Rev 1
Download
Advertisement