®
TIP102
TIP107
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■
LINEAR AND SWITCHING INDUSTRIAL
■
EQUIPMENT
AUDIO POWER AMPLIFIER
■
■
■
GENERAL POWER SWITCHING
DC-AC CONVERTER
EASY DRIVER FOR LOW VOLTAGE
DC MOTOR
DESCRIPTION
The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications.
The complementary PNP type is TIP107.
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
V
CBO
V
CEO
V
EBO
I
C
I
CM
Collector-Base Voltage (I
Emitter-Base Voltage (I
Collector Current
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
C
= 0)
Collector Peak Current
P
I
B tot
Base Current
Total Dissipation at T
T case
≤
25 amb
≤
25 o o
C
C
Storage Temperature T stg
T j
Max. Operating Junction Temperature
* For PNP types voltage and current values are negative.
April 2003
NPN
PNP
R
1
Typ. = 5 K
Ω
R
2
Typ. = 150
Ω
Value
TIP102
TIP107
100
100
5
8
15
1
80
2
-65 to 150
150
Unit
A
A
W
W o
C o
C
V
A
V
V
1/4
TIP102 / TIP107
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.56
62.5
o
C/W o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter
I
I
I
CEO
CBO
EBO
Collector Cut-off
Current (I
B
= 0)
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
* Collector-Emitter
Saturation Voltage
I
V
V
V
C
CE
CB
EB
= 50 V
Test Conditions
= 100 V
= 5 V
= 30 mA
V h
BE
FE
*
* Base-Emitter Voltage
DC Current Gain
I
C
= 3 A I
B
= 6 mA
I
C
= 8 A I
B
= 80 mA
I
C
= 8 A V
CE
= 4 V
I
C
= 3 A V
CE
= 4 V
I
C
= 8 A V
CE
= 4 V
V
F
* Forward Voltage of I
F
= - I
C
= 10 A
Commutation Diode
(I
B
= 0)
∗
Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
100
1000
200
Typ.
Max.
50
50
8
2
2.5
2.8
20000
2.8
Unit
µ
A
µ
A mA
V
V
V
V
V
Safe Operating Area
2/4
DIM.
F1
F2
G
G1
H2
L2
L4
A
C
D
E
F
L5
L6
L7
L9
M
DIA.
TIP102 / TIP107
TO-220 MECHANICAL DATA
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
mm
TYP.
2.40
10.00
16.40
13.00
2.65
15.25
6.20
3.50
2.60
3.75
14.00
2.95
15.75
6.60
3.93
3.85
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.511
0.104
0.600
0.244
0.137
0.147
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
inch
TYP.
MAX.
0.181
0.052
0.107
0.027
0.034
0.067
0.067
0.202
0.106
0.409
0.645
0.551
0.116
0.620
0.260
0.154
0.102
0.151
P011CI
3/4
TIP102 / TIP107
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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