®
BUL138
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
■
■
■
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STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125 o
C
APPLICATIONS
■
ELECTRONIC BALLASTS FOR
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FLUORESCENT LIGHTING
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL138 is manufactured using high voltage
Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P tot
T stg
T j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t p
< 5 ms)
Base Current
Base Peak Current (t p
< 5 ms)
Total Dissipation at T c
= 25 o
C
Storage Temperature
Max. Operating Junction Temperature
June 2001
Value
800
400
9
5
10
2
4
80
-65 to 150
150
Unit
V
A
A
V
V
A
A
W o
C o
C
1/6
BUL138
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.56
62.5
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 800 V
V
CE
= 800 V T j
= 125 o
C
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
V
C
CE
= 400 V
= 100 mA L = 25 mH
V
V
EBO
CE(sat)
∗
Emitter-Base Voltage
Collector-Emitter
Saturation Voltage
I
E
= 10 mA
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.6 A
I
C
= 4 A I
B
= 1 A
I
C
= 5 A I
B
= 1 A
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.6 A h
FE t s
∗
DC Current Gain
RESISTIVE LOAD
Storage Time
I
I
C
= 2 A V
CE
= 5 V
I
C
= 10 mA V
CE
= 5 V
V
C
= 2 A I
CC
= 250 V
B1
= -I
B2
= 0.4 A t t s f
INDUCTIVE LOAD
Storage Time
Fall Time
I
V
V
C
= 2 A I
BE(o ff)
CL
B1
= -5 V R
= 0.4 A
BB
= 0
Ω
= 250 V L = 200
µ
H t t s f
INDUCTIVE LOAD
Storage Time
Fall Time
I
V
V
T
C
= 2 A I
BE(o ff)
CL
B1
= -5V R
= 0.4 A
BB
= 0
Ω
= 250 V L = 200
µ
H j
= 125 o
C
∗
Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
400
9
8
10
2.4
Typ.
0.7
0.7
50
1
75
0.5
0.7
1
1
1.1
1.3
1.5
40
1.4
100 o
C/W o
C/W
Max.
100
500
250
Unit
µ
A
µ
A
µ
A
3.5
V
V
V
V
V
V
V
V
V
V
µ s
µ s ns
µ s ns
Safe Operating Areas Derating Curve
2/6
DC Current Gain DC Current Gain
BUL138
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Inductive Fall Time Inductive Storage Time
3/6
BUL138
Reverse Biased SOA RBSOA and Inductive Load Switching Test
Circuits
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
4/6
DIM.
H2
L2
L4
L5
L6
L7
L9
M
DIA.
A
C
D
E
F
F1
F2
G
G1
BUL138
TO-220 MECHANICAL DATA
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
mm
TYP.
10.00
16.40
13.00
2.65
15.25
6.20
3.50
2.60
3.75
14.00
2.95
15.75
6.60
3.93
3.85
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.511
0.104
0.600
0.244
0.137
0.147
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
inch
TYP.
MAX.
0.181
0.052
0.107
0.027
0.034
0.067
0.067
0.202
0.106
0.409
0.645
0.551
0.116
0.620
0.260
0.154
0.102
0.151
P011CI
5/6
BUL138
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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