STPS20LCD80CB
High voltage power Schottky rectifier
Datasheet - production data
A1
A2
A1
A2
K
A1
A2
K
K
DPA K
Features
High junction temperature capability
Good trade-off between leakage current and forward voltage drop
Low leakage current
Avalanche capability specified
ECOPACK ® 2 compliant component for
DPAK on demand
Description
This dual diode Schottky rectifier is suited for high frequency switched mode power supplies.
Packaged in DPAK, this device is intended to be used in high density converters, providing these applications with a good efficiency at both low and high load.
Table 1: Device summary
Symbol Value
I
F(AV)
V
RRM
T j
(max)
V
F
(typ)
2 x 10 A
80 V
175 °C
0.66 V
September 2017 DocID024228 Rev 2
This is information on a product in full production.
1/9 www.st.com
Characteristics
1 Characteristics
STPS20LCD80CB
Table 2: Absolute ratings (limiting values, per diode, at T amb
25 °C, unless otherwise stated)
Symbol Parameter Value Unit
I
V
RRM
F(RMS)
Repetitive peak reverse voltage
Forward rms current
I
F(AV)
Average forward current δ = 0.5, square wave
Per diode T
C
= 145 °C
Per device T
C
= 140 °C
I
FSM
Surge non repetitive forward current
P
ARM
(1)
Repetitive peak avalanche power
T
T stg j t p
= 10 ms sinusoidal t p
= 10 µs, T j
= 125 °C
Storage temperature range
Maximum operating junction temperature (2)
80
20
10
V
A
A
20
125 A
230 W
-65 to + 175 °C
+ 175 °C
Notes:
(1)
For pulse time duration derating, please refer to Figure 3: "Normalized avalanche power derating versus pulse duration (Tj = 125 °C)" . More details regarding the avalanche energy measurements and diode
validation in the avalanche are provided in the application notes AN1768 and AN2025.
(2)
(dP tot
/dT j
) < (1/R th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
R th(j-c)
Table 3: Thermal parameter
Parameter
Per diode
Junction to case
Total
Coupling R th(c)
When the diodes 1 and 2 are used simultaneously:
ΔT j (diode1)
= P
(diode1)
x R th(j-c)
(per diode) + P
(diode2)
x R th(c)
Value
3.20
1.95
0.70
Unit
°C/W
°C/W
2/9 DocID024228 Rev 2
STPS20LCD80CB
Symbol
I
R
(1)
V
F
(2)
Characteristics
Table 4: Static electrical characteristics (per diode)
Parameter Test conditions Min. Typ. Max. Unit
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
V
R
= V
RRM
I
F
= 10 A
I
F
= 20 A
-
-
-
-
-
-
3.2
2.8
15
8
0.815 0.880
0.660 0.710
1.030 1.160
0.765 0.865
µA mA
V
Notes:
(1)
Pulse test: t p
= 5 ms, δ < 2%
(2)
Pulse test: t p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.555 x I
F(AV)
+ 0.0155 I
F
2
(RMS)
DocID024228 Rev 2 3/9
Characteristics
1.1 Characteristics (curves)
STPS20LCD80CB
3
2
1
0
0
7
6
5
4
10
9
8
Figure 1: Average forward power dissipation versus average forward current (per diode)
P
F(AV)(W)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
1 2 3 4 5
IF(A V)(A)
6 7 8 9
δ =tp/T
10
T
11 12 tp
13
7
6
5
4
9
8
3
2
1
0
Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode)
I
F(A V)
(A)
12
11
R th(j -a)= Rth(j -c)
10
Tamb(°C)
0 25 50 75 100 125 150 175
Figure 3: Normalized avalanche power derating versus pulse duration (T j
= 125 °C)
1
P
ARM
(tp)
P
ARM
(10 µs)
0.1
0.01
0.001
1 10 100 1000
Figure 4: Relative variation of thermal impedance junction to case versus pulse duration
Zth(j-c) / Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Figure 5: Reverse leakage current versus reverse voltage applied (typical values, per diode)
1.E+05
I
R
(µA)
1.E+04
Tj = 150 °C
1000
Figure 6: Junction capacitance versus reverse voltage applied (typical values, per diode)
C(pF)
F=1MHz
V
OSC
T j
=30mV
RMS
=25°C
1.E+03
1.E+02
1.E+01
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
100
Tj = 25 °C
1.E+00
V
R
(V)
1.E-01
0 10 20 30 40 50 60 70 80
10
1 10 100
4/9 DocID024228 Rev 2
STPS20LCD80CB
Figure 7: Thermal resistance junction to ambient versus copper surface under tab
18
16
14
12
10
8
6
4
2
0
0.0
20
Characteristics
Figure 8: Forward voltage drop versus forward current (per diode)
IFM(A)
0.2
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
0.4
0.6
0.8
Tj=25°C
(Maximum values)
1.0
V
FM
(V)
1.2
DocID024228 Rev 2 5/9
Package information
2
2.1
Package information
STPS20LCD80CB
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Cooling method: by conduction (C)
Epoxy meets UL 94,V0
DPAK package information
Figure 9: DPAK package outline
6/9
This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed.
DocID024228 Rev 2
STPS20LCD80CB
Ref.
D
D1
E
E1 e e1
H
L
L2
L4
V2
A
A1
A2 b b4 c c2
Package information
Min.
2.18
0.90
0.03
0.64
4.95
0.46
0.46
5.97
4.95
6.35
4.32
Table 5: DPAK package mechanical data
Dimensions
Millimeters
Max.
2.40
1.10
0.23
0.90
5.46
0.61
0.60
6.22
5.60
6.73
5.50
Min.
0.085
0.035
0.001
0.025
0.194
0.018
0.018
0.235
0.194
0.250
0.170
2.286 typ.
4.40
9.35
1.0
0.60
-8°
4.70
10.40
1.78
1.27
1.02
+8°
0.173
0.368
0.039
0.023
-8°
Inches
0.090 typ.
0.185
0.409
0.070
0.050
0.040
+8°
Max.
0.094
0.043
0.009
0.035
0.215
0.024
0.023
0.244
0.220
0.265
0.216
Figure 10: DPAK recommended footprint (dimensions in mm)
DocID024228 Rev 2 7/9
Ordering information
3 Ordering information
Order code
STPS20LCD80CB-TR
STPS20LCD80CB
Table 6: Ordering information
Marking Package Weight Base qty Delivery mode
S20LC D80C DPAK 0.32 g 2500 Tape and reel
4 Revision history
Date Revision
Table 7: Document revision history
Changes
07-Jan-2015
27-Sep-2017
1
2
First full version, consolidating the previous internal release of march
2013. Updated the DPAK package information.
Updated description in cover page.
Minor text changes.
8/9 DocID024228 Rev 2
STPS20LCD80CB
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DocID024228 Rev 2 9/9
