FERD60H100C-Y
Datasheet
100 V, 2 x 30 A field-effect rectifier diode
K
A
A
K
K
A
D²PAK
A
Product status link
FERD60H100C-Y
Product summary
I
F(AV)
V
RRM
2 x 30 A
100 V
T j
(max.)
V
F
(typ.)
175 °C
0.64 V
Product label
Features
• AEC-Q101 qualified
• PPAP capable
• Operating T j
from -40 °C to 175 °C
• ST patented rectifier process
• Stable leakage current over reverse voltage
• Low forward voltage drop
• High frequency operation
• ECOPACK compliant
Applications
• Battery charger
• DC / DC converter
• OBC (on-board battery charger)
• PHEV – EV charging station
• Resonant LLC topology
• PFC functions (power factor correction)
Description
The FERD60H100C-Y is based on proprietary technology that achieves the best in class V
F
/I
R
trade-off for a given silicon surface.
This 100 V automotive diode has been optimized for use in confined applications where both efficiency and thermal performance are key parameters.
This device is suitable to be used in DCDC converter by improving the efficiency.
DS13664 - Rev 2 - April 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
DS13664 - Rev 2
FERD60H100C-Y
Characteristics
Characteristics
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T stg
T j
Table 1. Absolute ratings (limiting values per diode at 25 °C , unless otherwise specified)
Parameter
Repetitive peak reverse voltage (T j
= -40 °C to +175 °C)
Forward rms current
Average forward current T c
= 145 °C, δ = 0.5
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
Per diode
Per device t p
= 10 ms sinusoidal
Value
100
60
30
60
290
-65 to +175
-40 to +175
Unit
V
A
A
A
°C
°C
Table 2. Thermal resistance parameters
Symbol
R th(j-c)
Junction to case
Parameter
Per diode
Per device
Typ.
0.60
0.30
Value
Max.
1.06
0.53
For more information, please refer to the following application note:
• AN5088: Rectifiers thermal management, handling and mounting recommendations
Unit
°C/W
Symbol
I
R
(1)
V
F
(2)
Table 3. Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 125 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
Test conditions
I
I
I
I
V
V
F
F
F
F
R
R
= V
RRM
= 70 V
= 5 A
= 15 A
= 30 A
= 60 A
1. Pulse test: t p
= 5 ms, δ < 2%
2. Pulse test: t p
= 380 µs, δ < 2%
Typ.
To evaluate the conduction losses, use the following equation: P = 0.55 x I
F(AV)
+ 0.005 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power losses:
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
0.75
0.64
0.92
0.76
0.46
0.41
0.62
0.56
Max.
60
10
5
0.52
0.45
0.70
0.61
0.85
0.70
Unit
µA mA mA
V page 2/8
FERD60H100C-Y
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward current versus case temperature (δ = 0.5, per diode)
50
I
F(AV)
(A)
40
30
20
10
T
0
0
δ =tp/T
25 tp
50 75
T c
(°C)
100 125 150 175
Figure 2. Relative variation of thermal impedance junction to case versus pulse duration
Z th(j-c)
/R th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-04
Single pulse
1.E-03 1.E-02 1.E-01 t
P
(s)
1.E+00
Figure 3. Reverse leakage current versus reverse voltage applied (typical values, per diode)
1.E+05
I
R
(µA)
Figure 4. Junction capacitance versus reverse voltage applied (typical values, per diode)
C(pF)
10000
F = 1 MHz
V
OSC
= 30 mV
T j
= 25 °C
RMS
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
0
T j
= 150 °C
T j
= 125 °C
T j
= 100 °C
T j
= 75 °C
T j
= 50 °C
10 20 30 40
T j
= 25 °C
50 60 70 80
V
R
(V)
90 100
1000
100
0.1
1.0
V
R
(V)
10.0
100.0
Figure 5. Forward voltage drop versus forward current
(typical values, per diode)
100.0
I
F
(A)
10.0
T j
= 25 °C
T j
= 75 °C
1.0
T j
= 125 °C
T j
= 150 °C
T j
= -40 °C
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
F
(V)
0.9
1.0
40
30
20
10
0
0
Figure 6. Thermal resistance junction to ambient versus copper surface under tab (typical values)
60
R th(j-a)
(°C/W)
Epoxy printed board FR4, copper thickness = 70 µm D²PAK
50
5 10 15 20 25 30
S
Cu
(cm²)
35 40
DS13664 - Rev 2 page 3/8
2
2.1
FERD60H100C-Y
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
•
•
D²PAK package information
Epoxy meets UL94, V0.
Cooling method: by conduction (C)
Figure 7. D²PAK package outline
Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed.
DS13664 - Rev 2 page 4/8
DS13664 - Rev 2
FERD60H100C-Y
D²PAK package information
Ref.
e e1
H
J1
L
L1
L2
R
V2
D1
D2
E
E1
E2
A
A1 b b2 c c2
D
Table 4. D²PAK package mechanical data
4.88
15.00
2.49
2.29
1.27
1.30
1.23
8.95
7.50
1.10
10.00
8.30
6.85
Min.
4.40
0.03
0.70
1.14
0.45
0°
Millimeters
Typ.
7.75
1.30
8.50
7.05
2.54
0.40
5.28
15.85
2.69
2.79
1.40
1.75
1.36
9.35
8.00
1.50
10.40
8.70
7.25
Max.
4.60
0.23
0.93
1.70
0.60
Dimensions
0.190
0.591
0.097
0.090
0.049
0.050
0.048
0.352
0.295
0.043
0.394
0.335
0.266
Min.
0.173
0.001
0.028
0.045
0.018
Inches (for reference only)
Typ.
0.305
0.051
0.343
0.278
0.100
0.053
0.368
0.315
0.060
0.409
0.346
0.282
Max.
0.181
0.009
0.037
0.067
0.024
0.205
0.624
0.106
0.110
0.055
0.069
0.015
8° 0° 8°
Figure 8. D²PAK recommended footprint (dimensions are in mm)
12.2
9.75
16.9
3.5
1.6
2.54
5.08
page 5/8
3
FERD60H100C-Y
Ordering information
Ordering information
Order code
FERD60H100CGY-TR
Table 5. Ordering information
Marking
FD60H100CGY
Package
D²PAK
Weight
1.38 g
Base qty.
1000
Delivery mode
Tape and reel
DS13664 - Rev 2 page 6/8
Revision history
Date
25-Mar-2021
06-Apr-2021
Table 6. Document revision history
Revision
1
2
Changes
First issue.
Updated Features and Applications
.
FERD60H100C-Y
DS13664 - Rev 2 page 7/8
FERD60H100C-Y
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DS13664 - Rev 2 page 8/8
