STMicroelectronics STPS16H100C Datasheet
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STPS16H100C
High voltage power Schottky rectifier
Datasheet - production data
K
A1
A2
K
K
A1
A2
A1
A2
D2PAK
Features
Negligible switching losses
High junction temperature capability
Low leakage current
Good trade off between leakage current and forward voltage drop
Avalanche capability specified
ECOPACK ® 2 compliant component for
D²PAK on demand
Description
Dual center tap Schottky rectifier designed for high frequency miniature switch mode power supplies such as adaptors and on-board DC-DC converters.
Table 1: Device summary
Symbol Value
I
F(AV)
V
RRM
T j
(max)
V
F
(typ)
2x 8 A
100 V
175 °C
0.59 V
April 2015 DocID8734 Rev 3
This is information on a product in full production.
1/10 www.st.com
Characteristics
1 Characteristics
STPS16H100C
Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
I
F(RMS)
Forward rms current
I
F(AV)
Average forward current δ = 0.5, square wave
T
C
= 165 °C Per diode
T
C
= 160 °C Per device
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoidal
P
ARM
Repetitive peak avalanche power tp = 10 µs, T j
= 125 °C
T stg
T j
Storage temperature range
Maximum operating junction temperature (1)
100
30
8
16
200
625
-65 to + 175
+ 175
V
A
A
A
W
°C
°C
Notes:
(1)
(dP tot
/dT j
) < (1/R th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Table 3: Thermal parameter
Parameter Value Unit
Per diode 1.6
R th(j-c)
Junction to case °C/W
R th(c)
Coupling
Total 1.1
0.6 °C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R th(j-c)
(Per diode) + P(diode 2) x R th(c)
Symbol
Table 4: Static electrical characteristics (per diode)
Parameter Test conditions Min. Typ. Max. Unit
I
V
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
V
R
= V
RRM
I
F
= 8 A
I
F
= 16 A
-
-
-
-
-
-
3.6
1.6 5
0.77
0.59 0.64
0.88
0.67 0.73
µA mA
V
Notes:
(1)
Pulse test: t p
= 5 ms, δ < 2%
(2)
Pulse test: t p
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.55 x I
F(AV)
+ 0.011 I
F
2
(RMS)
2/10 DocID8734 Rev 3
STPS16H100C
1.1 Characteristics (curves)
Figure 1: Conduction losses versus average current (per diode)
7
P F(AV) (W)
6
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
5
δ = 1
4
3
Characteristics
2
T
1
0
0
I F(AV) (A)
1 2 3 4 5 6 7
δ
=tp/T
8 9 tp
10
Figure 3: Normalized avalanche power derating versus pulse duration (Tj= 125 °C)
Figure 2: Average forward current versus ambient temperature (δ= 0.5 per diode)
5
4
3
2
7
6
9
I F(AV) (A)
8
T
1
0
0
δ
=tp/T
25 tp
50
Rth
(j-a)
=Rth
(j-c)
Rth
(j-a)
=50°C/W
75
T amb (°C)
100 125 150 175
Figure 4: Relative variation of thermal impedance junction to case versus pulse duration
1.0
Zth(j-c) / Rth(j-c)
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01
δ =tp/T
T tp
1.E+00
Figure 5: Reverse leakage current versus reverse voltage applied (typical values per diode)
Figure 6: Junction capacitances versus reverse voltage applied (typical values per diode)
1.E+01 1.00
C(nF)
T j
=150°C
F=1MHz
V osc
T j
=30mV
=25°C
1.E+00
T j
=125°C
T j
=100°C
1.E-01
0.10
1.E-02
T j
=75°C
T j
=50°C
1.E-03
1.E-04
0
T j
=25°C
10 20 30 40 50 60 70 80 90 100
0.01
1 1 0 1 0 0
DocID8734 Rev 3 3/10
Characteristics
Figure 7: Forward voltage drop versus forward current (per diode)
STPS16H100C
Figure 8: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, ecu= 35 µm)
30
20
10
0
0
60
50
40
80
Rth(j-a)(°C/W)
70
5 10 15
S(cm²)
20 25 30 35 40
4/10 DocID8734 Rev 3
STPS16H100C
2 Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Cooling method: by conduction (C)
Epoxy meets UL 94,V0
DocID8734 Rev 3 5/10
Package information
2.1 D²PAK package information
Figure 9: D²PAK package outline
STPS16H100C
6/10
This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed.
DocID8734 Rev 3
STPS16H100C
Ref.
D2
E
E1
E2 e e1
A
A1 b b2 c c2
D
D1
H
J1
L
L1
L2
R
V2
Package information
4.88
15.00
2.49
1.90
1.27
1.30
Min.
4.36
0.00
0.70
1.14
0.38
1.19
8.60
6.90
1.10
10.00
8.10
6.85
Table 5: D²PAK package mechanical data
Dimensions
Millimeters
Max.
4.60
0.25
0.93
1.70
0.69
1.36
9.35
8.00
1.50
10.55
8.90
7.25
Min.
0.172
0.000
0.028
0.045
0.015
0.047
0.339
0.272
0.043
0.394
0.319
0.266
2.54 typ.
5.28
15.85
2.90
2.79
1.65
1.78
0.190
0.591
0.097
0.075
0.049
0.050
0.4 typ.
0° 8° -
Inches
Max.
0.100
0.205
0.181
0.010
0.037
0.067
0.027
0.053
0.368
0.311
0.060
0.415
0.346
0.282
0.624
0.112
0.110
0.065
0.070
0.015
-
DocID8734 Rev 3 7/10
Package information
Figure 10: D²PAK recommended footprint (dimensions in mm)
STPS16H100C
8/10 DocID8734 Rev 3
STPS16H100C
3 Ordering information
Ordering information
Order code
Table 6: Ordering information
Marking Package Weight Base qty Delivery mode
STPS16H100CG-TR STPS16H100CG D 2 PAK 1.38g 1000 Tape and reel
4 Revision history
Date Revision
Table 7: Document revision history
Changes
27-Jun-2012 2
22-Apr-2015 3
Updated features in cover page.
Minor text changes in Section 1: "Characteristics" .
Updated Section 2: "Package information" .
DocID8734 Rev 3 9/10
STPS16H100C
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© 2015 STMicroelectronics
– All rights reserved
10/10 DocID8734 Rev 3
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