STPSC12C065D-L
K
A K
TO-220AC
K
A
Features
No or negligible reverse recovery
Switching behavior independent of temperature
High forward surge capability
650 V power Schottky silicon carbide diode
Datasheet
-
production data
Description
The SiC diode is an ultrahigh performance power
Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use as boost or freewheeling diode, this rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases and thus, allows an easier design.
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T j
(max.)
12 A
650 V
175 °C
January 2016
This is information on a product in full production.
DocID026601 Rev 4 1/8 www.st.com
Characteristics
1 Characteristics
STPSC12C065D-L
Symbol
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Parameter
I
V
I
I
RRM
F(RMS)
I
F(AV)
FSM
FRM
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Repetitive peak forward current
TO-220AC, T c
= 120 °C
(1)
, DC t p
= 10 ms sinusoidal, T c
= 25 °C t p
= 10 ms sinusoidal, T c
= 125 °C t p
= 10 µs square, T c
= 25 °C
TO-220AC, T c
= 120 °C
(1)
, T j
= 175 °C,
= 0.1
T stg
T j
Storage temperature range
Operating junction temperature
(2)
1.
Value based on R th(j-c)
max.
2.
dTj
--------------------------
Rth j – a
condition to avoid thermal runaway for a diode on its own heatsink
Value
650
22
12
97
85
500
Unit
V
A
A
A
51 A
-65 to +175 °C
-40 to +175 °C
Symbol
R th(j-c)
Junction to case
Table 3. Thermal resistance
Parameter Typ. value
TO-220AC 1.2
Max. value
1.7
Unit
°C/W
Symbol
I
R
(1)
V
F
(2)
Parameter
Table 4. Static electrical characteristics
Tests conditions Min.
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
V
R
= V
RRM
I
F
=12 A
-
-
-
-
1.
t p
= 10 ms,
< 2%
2.
t p
= 500 µs,
< 2%
Typ.
10
100
1.56
1.98
Max.
120
500
1.75
2.5
Unit
µA
V
To evaluate the conduction losses use the following equation: P = 1.35 x I
F(AV)
+ 0.096 x I
F
2
(RMS)
Symbol Parameter
Table 5. Other parameters
Test conditions
Q cj
(1)
Total capacitive charge V
R
= 400 V
V
R
= 0 V, T c
= 25 °C, F = 1 MHz
C j
Total capacitance
1.
Most accurate value for the capacitive charge:
V
R
= 300 V, T c
= 25 °C, F = 1 MHz
∫
0
VOUT
Q = cj(vR).dvR
Typ.
29.3
530
55
Unit nC pF
2/8 DocID026601 Rev 4
STPSC12C065D-L Characteristics
Figure 1. Forward voltage drop versus forward current (typical values, low level)
Figure 2. Forward voltage drop versus forward current (typical values, high level)
24
I
F
(A)
Pulse test : t p
= 500 µs
20
T a
= 25°C
16
T a
= 100°C
12
8
T a
= 150°C
T a
= 175°C
120
I
F
(A)
Pulse test : t p
= 500 µs
100
80
60
40
T a
= 100°C
T a
= 150°C
T a
= 25°C
4 20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
F
(V)
3.5
0
0 1 2 3 4
T a
= 175°C
5 6 7
V
F
(V)
8
Figure 3. Reverse leakage current versus reverse voltage applied (typical values)
1.E+03
I
R
(µA)
1.E+02
1.E+01
T j
= 150°C
T j
= 175°C
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
0
T j
= 25°C
V
R
(V)
50 100 150 200 250 300 350 400 450 500 550 600 650
Figure 4. Peak forward current versus case temperature
80
I
M
(A)
δ = 0.1
60
40
δ = 0.3
δ = 0.5
20 δ = 1
δ = 0.7
0
0 25 50
T
C
(°C)
75 100 125
δ = tp/T
150
T tp
175
DocID026601 Rev 4 3/8
8
Characteristics STPSC12C065D-L
600
C j
(pF)
500
400
300
200
100
0
0.1
Figure 5. Junction capacitance versus reverse voltage applied (typical values)
1.0
V
R
(V)
10.0
Figure 6. Relative variation of thermal impedance junction to case versus pulse duration
100.0
V
F = 1 MHz
OSC
T j
= 30 mV
= 25 °C
RMS
1000.0
1.0
Z th(j-c)
/R th(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 t p
(s)
1.E+00
Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)
1.E+03
I
FSM
(A)
1.E+02
1.E+01
1.E-05 1.E-04
T a
= 25 °C
T a
= 125 °C
1.E-03
Figure 8. Total capacitive charges versus reverse voltage applied (typical values) t p
(s)
1.E-02
25
20
15
10
35
Q
Cj
(nC)
30
5
0
0 50 100 150 200 250 300 350
V
R
(V)
400
4/8 DocID026601 Rev 4
STPSC12C065D-L Package information
Epoxy meets UL94, V0
Recommended torque value (TO-220AC): 0.4 to 0.6 N·m
Cooling method: conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Figure 9. TO-220AC package outline
H2
Ø I C
A
L5
L7
L6
L2
F1
F
L9
L4
D
M
E
G
DocID026601 Rev 4 5/8
8
Package information
Ref.
L6
L7
L9
M
Diam. I
E
F
F1
G
H2
L2
L4
L5
A
C
D
STPSC12C065D-L
Table 6. TO-220AC package mechanical data
Dimensions
Millimeters Inches
Min.
4.40
1.23
2.40
0.49
0.61
1.14
4.95
10.00
Max.
4.60
1.32
2.72
0.70
0.88
1.70
5.15
10.40
Min.
0.173
0.048
0.094
0.019
0.024
0.044
0.194
0.393
16.40 typ.
0.645 typ.
13.00
2.65
15.25
6.20
3.50
14.00
2.95
15.75
6.60
3.93
0.511
0.104
0.600
0.244
0.137
2.6 typ.
0.102 typ.
3.75
3.85
0.147
0.551
0.116
0.620
0.259
0.154
Max.
0.181
0.051
0.107
0.027
0.034
0.066
0.202
0.409
0.151
6/8 DocID026601 Rev 4
STPSC12C065D-L Ordering information
Order code
STPSC12C065D-L
Table 7. Ordering information
Marking Package Weight Base qty Delivery mode
PSC12C065D TO-220AC 1.86 g 50 Tube
Date
9-Jul-2014
13-May-2015
21-May-2015
08-Jan-2016
Revision
Table 8. Document revision history
Changes
1
2
3
4
First issue.
Updated Table 7.
Format updated to current standard.
Updated marking of Table 7 and properties.
Title name and properties updated.
Format updated to current standard.
DocID026601 Rev 4 7/8
8
STPSC12C065D-L
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8/8 DocID026601 Rev 4
