Figure 5. Junction capacitance versus reverse voltage applied (typical values). STMicroelectronics 650 V power Schottky silicon carbide diode
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Characteristics STPSC12C065D-L
600
C j
(pF)
500
400
300
200
100
0
0.1
Figure 5. Junction capacitance versus reverse voltage applied (typical values)
1.0
V
R
(V)
10.0
Figure 6. Relative variation of thermal impedance junction to case versus pulse duration
100.0
V
F = 1 MHz
OSC
T j
= 30 mV
= 25 °C
RMS
1000.0
1.0
Z th(j-c)
/R th(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 t p
(s)
1.E+00
Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)
1.E+03
I
FSM
(A)
1.E+02
1.E+01
1.E-05 1.E-04
T a
= 25 °C
T a
= 125 °C
1.E-03
Figure 8. Total capacitive charges versus reverse voltage applied (typical values) t p
(s)
1.E-02
25
20
15
10
35
Q
Cj
(nC)
30
5
0
0 50 100 150 200 250 300 350
V
R
(V)
400
4/8 DocID026601 Rev 4
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