TN4050HP-12G2YTR
Datasheet
40 A 1200 V automotive grade thyristor (SCR)
A
Features
G
K
A
G
K
K D²PAK HV
Product status
TN4050HP-12G2YTR
Product summary
I
T(RMS)
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GT
T j
40 A
1200 V
1400 V
50 mA
-40 to 150 °C
• AEC-Q101 qualified
• High junction temperature: 150 °C
• AC off state voltage: +/- 1200 V
• Nominal on-state RMS current: 40 A
RMS
• High EFT noise immunity: 1000 V/μs
• Max. gate triggering current: 50 mA
• D²PAK HV creepage distance (anode to cathode):
– With top coating: 5.38 mm min.
– Without top coating: 3.48 mm min.
• ECOPACK2 compliant component
Application
• On board charger
• Capacitor discharge
• Overvoltage crowbar protection
• Power supplies
• AC switches
• Solid state relays
Description
The TN4050HP-12G2YTR is an automotive grade SCR thyristor designed for applications such as automotive on board and stationary battery chargers.
This SCR Thyristor, rated for a 40 A RMS power switching, offers superior performances in peak voltage robustness up to 400 V sine wave pulse. Its key features allow the design of functions such as a 56 A RMS AC switch and a 50 A
AC-DC controlled rectifier-bridge.
The TN4050HP-12G2YTR is available in D²PAK HV surface mount package, ideal for automatic assembly lines.
D²PAK HV package offers increased creepage distance of 5.38 mm, simplifying design conformity with insulation coordination standards such as IEC60664-1 and
UL-840.
DS13795 - Rev 2 - December 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
TN4050HP-12G2YTR
Characteristics
Characteristics
Symbol
I
T(RMS)
I
T(AV)
I
TSM
Table 1. Absolute ratings (limiting values)
Parameter
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
Non repetitive surge peak on-state current, V
R
= 0 V t p
= 8.3 ms t p
= 10 ms t p
= 10 ms
T
C
= 135 °C
T j
initial = 25 °C
T j
= 25 °C I 2 t dl/dt
V
DRM
/ V
RRM
V
DSM
/ V
RSM
V
GM
I
GM
V
RGM
P
G(AV)
T stg
T j
I 2 t value for fusing
Critical rate of rise of on-state current,
I
G
= 2 x I
GT
, tr ≤ 100 ns
Repetitive off-state voltage
Non repetitive surge peak off-state voltage
Peak forward gate voltage
Peak forward gate current
Maximum peak reverse gate voltage
Average gate power dissipation
Storage junction temperature range
Operating junction temperature f = 50 Hz t p
= 10 ms t p
= 20 µs t p
= 20 µs
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
Value
40
25
440
400
800
200
Unit
A
A
A 2 s
A/µs
1200
1400
10
8
5
1 W
-40 to +150 °C
-40 to +150 °C
V
V
V
A
V
Symbol
I
GT
V
GT
I
GD
V
GD
I
H
I
L dV/dt
Symbol t gt t q
Table 2. Electrical characteristics (T j
= 25 °C unless otherwise specified)
Test Conditions
V
D
= 12 V, R
L
= 33 Ω
V
D
= 800 V, R
L
= 3.3 Ω
V
D
= 800 V, R
L
= 3.3 Ω
I
T
= 500 mA, gate open
I
G
= 1.2 x I
GT
V
D
= 800 V, gate open
T j
= 150 °C
T j
= 150 °C
T j
= 150 °C
Min.
Max.
Max.
Min.
Min.
Max.
Max.
Min.
Value
10
50
1.3
3
0.2
100
125
1000
Table 3. Timing Parameters
Test Conditions
I
T
= 80 A , V
D
= 800 V, I
G
= 100 mA, dI
G
/dt = 0.2 A/µs
I
TM
= 25 A, V
D
= 800 V, dI
T
/dt = 10 A/µs,
V
R
= 75 V, dV
D
/dt = 20 V/µs, t p
= 100 µs
T j
= 150 °C
Typ.
Typ.
Value
1
150
Unit mA
V mA
V mA mA
V/µs
Unit
µs
µs
Symbol
V
TM
I
TM
= 80 A, t
P
= 380 µs
Table 4. Static Characteristics
Test Conditions
T j
= 25 °C Max.
Value
1.55
Unit
V
DS13795 - Rev 2 page 2/11
Symbol
V
TO
R
D
I
DRM
/I
RRM
I
DSM
/I
RSM
On-state threshold voltage
On-state dynamic resistance
V
D
= V
DRM
, V
R
= V
RRM
V
D
= V
DSM
, V
R
= V
RSM
Test Conditions
T j
= 150 °C
T j
= 150 °C
T j
= 25 °C
T j
= 125 °C
T j
= 150 °C
T j
= 25 °C
Symbol
R th(j-c)
R th(j-a)
Table 5. Thermal parameters
Parameter
Junction to case (DC)
Junction to ambient (DC, S
CU
= 2.5 cm², ℮
CU
= 70 µm)
TN4050HP-12G2YTR
Characteristics
Max.
Max.
Max.
Max.
Value
0.83
10
5
0.9
6
10
Unit
V mΩ
µA mA mA
µA
Max.
Typ.
Value
0.4
45
Unit
°C/W
DS13795 - Rev 2 page 3/11
TN4050HP-12G2YTR
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Maximum average power dissipation versus average on-state current
45
P(W)
40
25
20
15
35
30
10
5
0
0 5
α = 30 °
α = 60 °
α = 90 °
α = 180 °
α = 120 °
10 15
IT
(AV)
(A)
20 25
DC
360 °
α
30 35
Figure 2. Average and D.C. on-state current versus case temperature
45
IT
(AV)
(A)
DC
40
35
30
25
20
15
10
α = 180 °
α = 120 °
α = 90 °
α = 60 °
α = 30 °
5
0
0 25 50
T c
(°C)
75 100 125 150
Figure 3. Average and D.C. on-state current versus ambient temperature
4.0
IT
(AV)
(A)
3.5
3.0
2.5
2.5
1.5
1.0
0.5
0.0
0
α = 180 °
25
DC
50
T a (°C)
75 100 125 150
Figure 4.
1000
I
TM
(A)
On-state characteristics (maximum values)
100
T j
= 150 °C
10
1
0.5
1.0
T j
= 25 °C
1.5
2.0
V
TM
(V)
2.5
3.0
3.5
T j
max: 150 °C
V
R
T0
= 0.83 V
D
= 10 mΩ
4.0
4.5
Figure 5. Surge peak on-state current versus number of cycles
450
I
TSM
(A)
400
350
300
250
200
150
100
50
0
1
Non repetitive Tj = 25 °C
Repetitive Tc = 135 °C
10
Number of cycles
100
One cycle
V
R
= 0 V
1000
Figure 6. Non repetitive surge peak on-state current for a sinusoidal pulse with width t p
< 10 ms
I
TSM
(A)
10000 dI/dt limitation: 200 A/µs
T j
initial = 25 °C
1000
100
10
0.01
I
TSM
0.10
t
P
(ms)
1.00
10.00
DS13795 - Rev 2 page 4/11
TN4050HP-12G2YTR
Characteristics (curves)
Figure 7. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)
1.0E+00
I
DRM
, I
RRM
[ T j
;V
DRM
, V
RRM
] / I
DRM
/ I
RRM
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25 50 75 100
V
DRM
= V
RRM
= 1200 V
125
T j
(°C)
150
Figure 8. Relative variation of holding and latching current versus junction temperature (typical values)
1.8
IH, IL [ Tj ] / IH, IL [ Tj = 25 °C]
1.0
0.8
0.5
1.5
1.3
0.3
0.0
-40
IH
-20
IL
0 20 40
T j
(°C)
60 80 100 120 140
Figure 9. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values)
2.0
IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C]
1.5
I
GT
Figure 10. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration
1.00
K = [Zth / Rth]
Z th(j-c)
Z th(j-a)
1.0
V
GT
0.5
0.0
-40 -20 0 20 40
T j
(°C)
60 80 100 120 140
0.10
0.01
1.E-03 1.E-02 1.E-01 t p
(s)
1.E+00 1.
E+01 1.E+02 1.E+03
40
30
20
10
0
0
Figure 11. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4) (D²PAK)
80
R th(j-a)
(°C/W)
D²PAK
70
60
50
5 10 15
S
Cu
(cm²)
20 25 30 e
Cu
= 35 µm e
Cu
= 70 µm e
Cu
= 105 µm
35 40
4
3
2
1
0
25
Figure 12. Relative variation of static dV/dt immunity versus junction temperature
6 dv/dt [ Tj ] / dv/dt [ Tj = 150 °C]
V
D
= V
R
= 800 V
5
50 75
T j (°C)
100 125 150
DS13795 - Rev 2 page 5/11
2
2.1
TN4050HP-12G2YTR
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
•
D²PAK high voltage package information
Epoxy meets UL94, V0
Figure 13. D²PAK high voltage package outline
DS13795 - Rev 2 page 6/11
Ref.
L3
L4
M
R
V
H1
J1
L
L1
L2 e
E
F
F2
H
A
A1
C
D
TN4050HP-12G2YTR
D²PAK high voltage package information
6.85
1.50
2.60
0.20
0°
1.14
10.00
7.40
2.49
15.30
1.27
4.93
8.95
4.98
0.50
0.78
Min.
4.30
0.03
1.17
Table 6. D²PAK high voltage package mechanical data
Dimensions
Millimeters Inches
7.25
1.7
2.9
0.60
8°
1.70
10.40
7.80
2.69
15.80
1.40
5.23
9.35
5.18
0.90
0.85
Max.
4.70
0.20
1.37
0.0448
0.3937
0.2913
0.0980
0.6023
0.0500
0.1940
0.2696
0.0590
0.1023
0.0078
0°
Min.
0.1692
0.0011
0.0460
0.3523
0.1960
0.0196
0.0307
Figure 14. D²PAK high voltage footprint in mm
10,58
0.0670
0.4095
0.3071
0.1060
0.6221
0.0552
0.2060
0.2855
0.0670
0.1142
0.0237
8°
Max.
0.1851
0.0079
0.0540
0.3682
0.2040
0.0355
0.0335
Note:
7,46
15,95
5,10
3,40
1,20
5,08
For package and tape orientation, reel and inner box dimensions and tape outline please check TN1173.
DS13795 - Rev 2 page 7/11
2.1.1
Note:
TN4050HP-12G2YTR
D²PAK high voltage package information
Creepage distance between anode and cathode
Symbol
Cd
K-A1
Cd
K-A2
Table 7. Creepage distance between anode and cathode
Parameter
Minimum creepage distance between K and A1 (with top coating)
Minimum creepage distance between K and A2 (without top coating)
D²PAK HV
Value Unit
5.38
3.48
mm
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1)
Figure 15. Creepage with top coating
Figure 16. Creepage without top coating
DS13795 - Rev 2 page 8/11
3
TN4050HP-12G2YTR
Ordering information
Ordering information
Figure 17. Ordering information scheme
TN 40 50 HP - 12 G2 Y TR
Series
TN = SCR thyristor
Current (RMS)
40 = 40 A
Gate triggering current
50 = 50 mA
Series
HP = High temperature
Blocking voltage
12 = 1200 V
Package
G2 = D²PAK HV
Grade
Y = Automotive grade
Packing
TR = Tape and reel
Order code
TN4050HP-12G2YTR
Table 8. Ordering information
Marking
TN40P12YB2
Package
D²PAK HV
Weight
1.38 g
Base qty.
1000
Delivery mode
Tape and reel 13"
DS13795 - Rev 2 page 9/11
TN4050HP-12G2YTR
Revision history
Date
03-Aug-2021
16-Dec-2021
Table 9. Document revision history
Revision
1
2
Changes
Initial release.
Updated Table 2
. Added
Figure 6 and
Figure 11
.
DS13795 - Rev 2 page 10/11
TN4050HP-12G2YTR
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DS13795 - Rev 2 page 11/11
