TN3050H-12WY
Datasheet
30 A, 1200 V automotive grade SCR Thyristor
A
G
K
TAB = A
K
A
G
TO-247 uninsulated
Product status
TN3050H-12WY
Product summary
I
T(RMS)
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GT
T j
30 A
1200 V
1400 V
50 mA
150 °C
Features
• AEC-Q101 qualified
• High junction temperature: T j
= 150 °C
• AC off state voltage: +/- 1200 V
• Nominal on-state current: 30 A
RMS
• High noise immunity: 1000 V/μs
• Max. gate triggering current: 50 mA
• ECOPACK2 compliant component
Applications
• Automotive applications: on board and off board battery charger
• Renewable energy inverters
• Solid state relay
• 3-Phase heating or motor soft start control
• UPS (uninterruptible power supply)
• Bypass SSR / hybrid relay
• Inrush current limiter in battery charger
• AC-DC voltage controlled rectifier
• Industrial welding systems
Description
The TN3050H-12WY is an automotive grade SCR Thyristor designed for applications such as automotive on-board chargers, solid state AC relays and stationary battery chargers.
This SCR Thyristor, rated for a 30 A RMS power switching, offers superior performance in peak voltage robustness up to 1400 V and surge current handling up to 300 A sine wave pulse. Its key features allow the design of functions such as a 42
A RMS AC switch (dual back-to-back SCRs) and a 38 A average AC-DC controlled rectifier bridge for inrush current limitation.
Available in through-hole TO-247 package, this power package allows a thermal operation up to 30 A RMS with a higher case temperature of 126 °C.
DS11831 - Rev 5 - March 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
TN3050H-12WY
Characteristics
Characteristics
Table 1. Absolute ratings (limiting values)
Symbol
I
T(RMS)
I
T(AV)
Parameter
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
I
TSM
(1)
Non repetitive surge peak on-state current, V
R
= 0 V t p
= 8.3 ms t p
= 10 ms
V
DRM
/V dl/dt
RRM
Repetitive off-state voltage (50-60 Hz)
I
G
= 2 x I
GT
, tr ≤ 100 ns
Critical rate of rise of on-state current
Peak forward gate current f = 50 Hz
I
GM
P
G(AV)
T stg
T j
Average gate power dissipation
Storage junction temperature range
Operating junction temperature t p
= 20 µs
1. ST recommend I²t value for fusing = 450 A²s for T j
= 25 °C and t
P
= 10 ms
T
C
= 126 °C
T j
initial = 25
°C
T j
= 150 °C
T j
= 150 °C
T j
= 150 °C
T j
= 150 °C
Value
30
19
330
300
1200
200
8
1
-40 to +150
-40 to +150
Unit
A
A
A
V
A/µs
A
W
°C
°C
I
GT
V
GT
V
GD
I
H
I
L t gt dV/dt
Symbol t q
V
TM
V
TO
R
D
I
DRM
/I
RRM
I
DSM
/I
RSM
Table 2. Electrical characteristics (T j
= 25 °C unless otherwise specified)
Test Conditions
V
D
= 12 V, R
L
= 33 Ω
V
D
= 12 V, R
L
= 33 Ω
V
D
= 2/3 x V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA, gate open
I
G
= 1.2 x I
GT
I
T
= 60 A , V
D
= 2/3 x V
DRM
, I
G
= 100 mA, dI
G
/dt = 0.2 A/µs
V
D
= 2/3 x V
DRM
, gate open
I
T
= 20 A, dI
T
/dt = 10 A/µs, V
R
= 75 V,
V
D
= 2/3 x V
DRM
, dV
D
/dt = 20 V/µs, t
P
= 100 µs
I
TM
= 60 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
DRM
, V
R
= V
RRM
V
D
= V
DSM
, V
R
= V
RSM
Value Unit
Min.
Max.
10
50
Max.
1.3
mA
V
T j
= 150 °C Min.
0.2
Max.
100
Max.
125
V mA mA
T j
= 150 °C
Typ.
1 µs
Min.
1000 V/µs
T j
= 150 °C Typ.
150
Max.
1.65
T j
= 150 °C Max.
0.88
T j
= 150 °C Max.
14
T j
= 25 °C Max.
T j
= 125 °C Max.
5
3
T j
= 150 °C Max.
T j
= 25 °C Max.
5
10
µs mA mA
µA
V
V mΩ
µA
DS11831 - Rev 5 page 2/10
Symbol
R th(j-c)
R th(j-a)
Junction to case (DC, max.)
Junction to ambient (typ.)
Table 3. Thermal parameters
Parameter
TN3050H-12WY
Characteristics
Value Unit
0.8
°C/W
50
DS11831 - Rev 5 page 3/10
TN3050H-12WY
Characteristics (curves)
1.1
Characteristics curves
Figure 1. Maximum average power dissipation versus average on-state current
30
P(W)
25
20
15
10
5
0
0 5
α = 30 °
α = 60 °
α = 90 °
α = 120 °
α = 180 °
10
I
T(AV)
(A)
15 20
D.C
25
Figure 2. Average and DC on-state current versus case temperature
35
IT(AV)(A)
30
25
20
15
10
5
0
0
α = 30 °
α = 60 °
α = 90 °
α = 120 °
α = 180 °
25 50 75 100
D.C
T (°C)
125 150
Figure 3. On-state characteristics (maximum values)
1000
ITM(A)
100
10
1
0.0
T j
= 150 °C
1.0
T j
= 25 °C
2.0
V
TM
(V)
3.0
At T
V
R to d j max :
= 0.88 V
= 14 mΩ
4.0
Figure 4. Average and D.C. on-state current versus ambient temperature
4.0
IT(AV)(A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
α
= 180 °
DC
25 50 75
T a
(°C)
100 125 150
Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration
Figure 6. Surge peak on-state current versus number of cycles
1.0E+00
K = [Zth/Rth]
1.0E-01
1.0E-02
Z th(j -c)
Z th(j -a) t
P
(s)
1.0E-03
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
350
300
250
200
150
100
50
0
1
ITSM(A)
Non repetitive,T j initial = 25 °C
Repetitive, T
C
= 126 °C
10
Number of cycles
100
One cycle
V
R
= 0 V
1000
DS11831 - Rev 5 page 4/10
TN3050H-12WY
Characteristics (curves)
Figure 7. Non repetitive surge peak on-state current for a sinusoidal pulse (t p
< 10 ms)
10000
ITSM(A) dI/dt limitation: 200 A/µs
T j initial = 25 °C
VR = 0 V
I
TSM
1000
100
10
0.01
0.10
1.00
tP(ms)
10.00
Figure 8. Relative variation of holding and latching current versus junction temperature (typical values)
2.0
I
H
, I
L
[T j
]/ I
H
, I
L
[T j
= 25 °C]
1.8
1.5
1.3
1.0
0.8
0.5
0.3
-50
I
L
-25
I
H
0 25 50 75
Tj(°C)
100 125 150
Figure 9. Relative variation of gate triggering current and voltage versus junction temperature
Figure 10. Relative variation of the static dV/dt immunity versus junction temperature (typical values)
2.0
I
GT
,V
GT
[T j
] / I
GT
,V
GT
[T j
= 25 °C]
I
GT
1.5
1.0
V
GT
0.5
0.0
-50 -25 0 25 50 75 100
Tj(°C)
125 150
5
4
3
2
7 dV/dt[Tj]/dV/dt[Tj = 150 °C]
6
1
0
25 50 75
V
D
= 0.67 x V
DRM
100
Tj (°C)
125 150
Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage
1.0E+00
I
DRM
,I
RRM
[T j
;V
DRM
,V
RRM
] / I
DRM
,I
RRM
[150 °C; 1200 V]
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25
V
DRM
= V
RRM
= 1200 V
50 75 100
V
DRM
= V
RRM
= 1000 V
125
Tj(°C)
150
DS11831 - Rev 5 page 5/10
2
2.1
TN3050H-12WY
Package information
Package information
•
•
•
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-247 package information
Epoxy meets UL 94,V0
Recommended torque value: 0.8 N·m
Maximum torque value: 1 N·m
Figure 12. TO-247 package outline
DS11831 - Rev 5
0075325_9 page 6/10
DS11831 - Rev 5
TN3050H-12WY
TO-247 package information
Table 4. TO-247 package mechanical data
Dimensions
Dim.
L1
L2 e
L
ØP
(3)
ØR
S b2 c
D
(2)
E
A
A1 b b1
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
Millimeters
Typ.
5.45
18.50
3.65
5.50
5.70
5.50
1. Inch dimensions given only for reference
2. Dimension D plus gate protrusion does not exceed 20.5 mm
3. Resin thickness around the mounting hole is not less than 0.9 mm
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
Min.
0.1909
0.0866
0.0394
0.0787
0.1181
0.0157
0.7815
0.6083
0.2087
0.5591
0.1457
0.1398
0.1772
0.2087
Inches (1)
Typ.
0.2146
0.7283
0.2165
Max.
0.2028
0.1024
0.0551
0.0945
0.1339
0.0315
0.7933
0.6201
0.2205
0.5827
0.1693
0.1437
0.2165
0.2244
page 7/10
3
TN3050H-12WY
Ordering information
Ordering information
Order code
TN3050H-12WY
Table 5. Ordering information
Marking
TN3050H12Y
Package
TO-247
Weight
4.4 g
Base qty.
50
Delivery mode
Tube
DS11831 - Rev 5 page 8/10
TN3050H-12WY
Revision history
Date
16-Sep-2016
03-Oct-2016
15-Jan-2019
05-Aug-2019
31-Mar-2020
Revision
1
2
3
4
5
Table 6. Document revision history
Changes
Initial release.
Updated
Table 3. Thermal parameters
.
Updated
Table 5. Ordering information .
Updated
Section Description
and Table 1. Absolute ratings (limiting values)
.
Updated
Figure 6 and
Figure 7 .
DS11831 - Rev 5 page 9/10
TN3050H-12WY
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© 2020 STMicroelectronics – All rights reserved
DS11831 - Rev 5 page 10/10
