Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5: On/off states
Symbol Parameter Test conditions
V
(BR)DSS
V
GS
= 0 V, I
D
= 1 mA
I
DSS
Zero gate voltage Drain current
V
GS
= 0 V, V
DS
= 650 V
V
GS
= 0 V, V
DS
= 650 V,
T
C
= 125 °C
I
GSS
Gate-body leakage current V
DS
= 0 V, V
GS
= ± 25 V
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 16 A
Symbol
Drain-source breakdown voltage
Parameter
Table 6: Dynamic
Test conditions
C
C
C
R oss
Q
Q
Q iss rss
G g gs gd
C
oss eq.
(1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
DS
= 0 V to 520 V,
V
GS
= 0 V f = 1 MHz, open drain
V
DD
= 520 V, I
D
= 32 A,
V
GS
= 10 V (see Figure 15:
"Gate charge test circuit" )
STI40N65M2, STP40N65M2
Min
.
Typ. Max. Unit
650 V
1 µA
100 µA
3
±10 µA
4 V
0.087 0.099
Ω
2
Min. Typ. Max. Unit
-
-
2355
102
-
- pF pF
- 2.7 - pF
-
-
-
-
-
380
4.5
56.5
8
24
-
-
-
-
-
Notes:
(1)
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
Symbol Parameter
Table 7: Switching times
Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 325 V, I
D
= 16 A
R
G
= 4.7
Ω, V
GS
= 10 V (see
Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform" )
-
-
-
-
15
10
96.5
12
-
-
-
- ns ns ns ns pF
Ω nC nC nC
4/14 DocID027478 Rev 1
STI40N65M2, STP40N65M2
Symbol
I
RRM
Parameter
I
SD
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Source-drain current
Reverse recovery time
Reverse recovery charge
Table 8: Source drain diode
Test conditions
Reverse recovery current
V
GS
= 0 V, I
SD
= 32 A
I
SD
= 32 A, di/dt = 100 A/µs,
V
DD
= 60 V (see Figure 16: "
Test circuit for inductive load switching and diode recovery times" )
t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 32 A, di/dt = 100 A/µs,
V
DD
= 60 V, T j
= 150 °C (see
Figure 16: " Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
- 32 A
- 128 A
-
-
-
468
8.7
1.6 V ns
µC
- 37.5 A
-
-
610
11.7 ns
µC
- 39 A
Notes:
(1)
Pulse width is limited by safe operating area
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%
DocID027478 Rev 1 5/14
