®
BUT70W
HIGH POWER NPN TRANSISTOR
■
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
VERY LOW SATURATION VOLTAGE AND
HIGH GAIN
APPLICATION
■
SWITCHING REGULATORS
■
■
MOTOR CONTROL
HIGH FREQUENCY AND EFFICENCY
CONVERTERS
DESCRIPTION
The BUT70W is a Multiepitaxial planar NPN transistor in TO-247 plastic package.
It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
I
E(RMS)
I
EM
I
B
I
BM
P tot
T stg
T j
Parameter
Collector-emitter Voltage (V
BE
= -1.5V)
Collector-emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Emitter Current
Emitter Peak Current
Base Current
Base Peak Current
Total Power Dissipation at T case
<
25 o
C
Storage Temperature
Max Operating Junction Temperature
February 2002
Value
200
125
7
40
120
8
24
200
-65 to 150
150
A
A
A
A
W o
C o
C
Unit
V
V
V
1/4
BUT70W
THERMAL DATA
R thj-case
Thermal Resistance Junction-case Max 0.63
o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
I
CER
CEV
Collector Cut-off
Current (R
BE
= 5
Ω
)
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
V
CE
V
CE
V
CE
= 200 V
= 200 V T
C
= 200 V
= 200 V T
C
= 100
= 100 o o
C
C
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
V
C
EB
= 5 V
= 0.2 A L = 25 mH
V
(BR)EBO
V
CE(sat)
∗
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
I
E
= 50 mA
I
C
= 70 A I
B
= 7 A
I
C
= 70 A I
B
= 7 A T
C
= 100 o
C
I
C
= 35 A I
B
= 1.75 A
I
C
= 35 A I
B
= 1.75 A T
C
= 100 o
C
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
I
C
= 70 A I
B
= 7 A
I
C
= 70 A I
B
= 7 A T
C
= 100 o
C
I
C
= 35 A I
B
= 1.75 A
I
C
= 35 A I
B
= 1.75 A T
C
= 100 o
C di c
/d t
∗
Rated of Rise of on-state Collector t
V p
CC
= 100 V R
C
= 0 I
= 3
µ s T
B1
C
= 3.5 A
= 100 o
C
Current
∗
Pulsed: Pulse duration = 300
µ s, duty cycle < 2 %
125
7
140
Typ.
Max.
1
5
1
4
1
0.9
1.5
0.9
1.2
1.8
1.9
1.4
1.4
V
V
V
V
V
V
V
V
V
V
A/
µ s
Unit mA mA mA mA mA
INDUCTIVE LOAD
Symbol t s t f t c
Parameter
Storage Time
Fall Time
Cross Over Time
Test Conditions
I
C
V
Ι
B1
V
= 35 A V
BB
= -5 V R
= 1.75 A L
CLAMP
= 125V T
CC
B2
C
C
= 90 V
= 1.4
Ω
= 0.15 mH
= 100 o
C
Min.
Typ.
Max.
1.8
0.2
0.35
Unit
µ s
µ s
µ s
2/4
DIM.
F4
G
H
L
L3
L4
L5
M
A
D
E
F
F3
BUT70W
MIN.
4.7
2.2
0.4
1
2
3
15.3
19.7
14.2
2
TO-247 MECHANICAL DATA
mm
TYP.
MAX.
5.3
2.6
0.8
1.4
2.4
3.4
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
10.9
15.9
20.3
14.8
0.602
0.776
0.559
34.6
5.5
3 0.079
inch
TYP.
0.429
1.362
0.217
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
0.626
0.779
0.582
0.118
P025P
3/4
BUT70W
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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