STMicroelectronics Medium voltage NPN fast-switching Darlington transistors Datasheet
বিজ্ঞাপন
বিজ্ঞাপন
®
BU806
BU807
MEDIUM VOLTAGE NPN FAST SWITCHING
DARLINGTON TRANSISTORS
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
NPN DARLINGTONS
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
■
HORIZONTAL DEFLECTION FOR
MONOCHROME TVs
DESCRIPTION
The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package.
They can be used in horizontal output stages of
110 o CRT video displays.
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
V
CEV
Collector-base Voltage (I
E
= 0)
Collector-emitter Voltage (V
BE
= -6V)
BU806
400
400
BU807
330
330
V
V
V
CEO
V
EBO
Collector-emitter Voltage (I
B
= 0) 200 150 V Obsolete Product(s) - Obsolete Product(s)
I
C
Collector Current 8 A
I
CM
I
DM
I
B
P tot
T stg
T j
Collector Peak Current
Damper Diode Peak Forward Current
Base Current
Total Power Dissipation at T case
<
25 o
C
Storage Temperature
Max Operating Junction Temperature
15
10
2
60
-65 to 150
150
W o
C o
C
A
A
A
1/4 October 2003
BU806 / BU807
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.08
70
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
I
CES
CEV
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (V
BE
= -6V) for BU807 V
CE
= 330 V for BU806 V
CE
= 400 V for BU807 V
CE
= 330 V for BU806 V
CE
= 400 V
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
V
F
∗
Damper Diode
Forward Voltage
I
I
I
I
V
C
= 100 mA for BU807
for BU806
C
C
F
EB
= 6 V
= 5A I
= 5A I
= 4A
B
B
= 50mA
= 50mA
RESISTIVE LOAD t on t off t s
Turn-on Time
Turn-off Time
Storage Time
I
I
C
= 5 A V
B1
= 50 mA I t f
Fall Time
∗
Pulsed: Pulse duration = 300
µ s, duty cycle < 1.5 %
CC
= 100 V
B2
= -500 mA
150
200
Typ.
0.35
0.4
0.55
0.2
Max.
100
100
100
100
3.5
Unit
µ
A
µ
A
µ
A
µ
A mA
1.5
2.4
2
1 o
C/W o
C/W
V
V
V
V
V
µ s
µ s
µ s
µ s
Obsolete Product(s) - Obsolete Product(s)
2/4
DIM.
H2
L2
L4
L5
L6
L7
L9
M
DIA.
A
C
D
E
F
F1
F2
G
G1
BU806 / BU807
TO-220 MECHANICAL DATA
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
mm
TYP.
10.00
16.40
13.00
2.65
15.25
6.20
3.50
2.60
3.75
14.00
2.95
15.75
6.60
3.93
3.85
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.511
0.104
0.600
0.244
0.137
0.147
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
inch
TYP.
MAX.
0.181
0.052
0.107
0.027
0.034
0.067
0.067
0.202
0.106
0.409
0.645
0.551
0.116
0.620
0.260
0.154
0.102
0.151
Obsolete Product(s) - Obsolete Product(s)
P011CI
3/4
BU806 / BU807
Obsolete Product(s) - Obsolete Product(s)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
Obsolete Product(s) - Obsolete Product(s) subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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