®
ST13007D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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IMPROVED SPECIFICATION:
- LOWER LEAKAGE CURRENT
- TIGHTER GAIN RANGE
- DC CURRENT GAIN PRESELECTION
- TIGHTER STORAGE TIME RANGE
HIGH VOLTAGE CAPABILITY
INTEGRATED FREE-WHEELING DIODE
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
o
C
LARGE RBSOA
APPLICATIONS
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UP TO 120W ELECTRONIC
TRANSFORMERS FOR HALOGEN LAMPS
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P tot
T stg
T j
Parameter
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T c
≤
25 o
C
Storage Temperature
Max. Operating Junction Temperature
April 2003
Value
700
400
9
8
16
4
8
80
-65 to 150
150
A
A
A
A
W o
C o
C
Unit
V
V
V
1/7
ST13007D
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.56
62.5
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 700 V
V
CE
= 700 V T c
= 100 o
C
I
CEO
Collector Cut-off
Current (I
B
= 0)
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
I
V
V
C
CE
EB
= 400 V
= 9 V
= 10 mA
I
C
= 2 A I
B
= 0.4 A
I
C
= 5 A I
B
= 1 A
I
C
= 8 A I
B
= 2 A
I
C
= 5 A I
B
= 1 A T c
= 100 o
C
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
I
C
= 2 A I
B
= 0.4 A
I
C
= 5 A I
B
= 1 A
I
C
= 5 A I
B
= 1 A T c
= 100 o
C h
FE
∗
DC Current Gain I
C
= 2 A V
CE
= 5 V
I
C
= 5 A V
CE
= 5 V
V f
Diode Forward
Voltage
I
C
= 3 A t t s f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 5 A V
CL
= 250 V R
BB
= 0
Ω
I
B1
= 1 A V
BE(off)
= -5 V
L = 200
µ
H (see figure 1) t t s f
INDUCTIVE LOAD
Storage Time
Fall Time
I
Ι
C
= 5 A V
B1
= 1 A V
L = 200
µ
H T
CL
= 250 V R
BE(off)
C
= -5 V
= 125 o
C
BB
= 0
Ω
(see figure 1)
* Pulsed: Pulse duration = 300
µ s, duty cycle 2 %.
400
18
8
Typ.
1.7
90
2.2
150
0.8
1.5
2
3
1.2
1.6
1.5
40
25
2.5
Max.
10
0.5
100
100
Unit
µ
A mA
µ
A
µ
A
V
2.3
150 o
C/W o
C/W
V
V
V
V
V
V
V
V
µ s ns
µ s ns
2/7
Safe Operating Area Derating Curve
ST13007D
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
3/7
ST13007D
Diode Forward Voltage Switching Time Resistive Load
Switching Time Inductive Load Reverse Biased SOA
4/7
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
ST13007D
5/7
ST13007D
DIM.
H2
L2
L4
L5
L6
L7
L9
M
DIA.
A
C
D
E
F
F1
F2
G
G1
TO-220 MECHANICAL DATA
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
mm
TYP.
10.00
16.40
13.00
2.65
15.25
6.20
3.50
2.60
3.75
14.00
2.95
15.75
6.60
3.93
3.85
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.511
0.104
0.600
0.244
0.137
0.147
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
inch
TYP.
MAX.
0.181
0.052
0.107
0.027
0.034
0.067
0.067
0.202
0.106
0.409
0.645
0.551
0.116
0.620
0.260
0.154
0.102
0.151
P011CI
6/7
ST13007D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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