STMicroelectronics 1N6263 Datasheet

®

1N6263

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION

Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.

Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.

DO-35

ABSOLUTE RATINGS (limiting values)

Symbol Parameter

V

RRM

I

F

I

FSM

T stg

T j

T

L

Repetitive Peak Reverse Voltage

Forward Continuous Current*

Surge non Repetitive Forward Current*

Storage and Junction Temperature Range

T a

= 25°C t p

≤

1s

Maximum Lead Temperature for Soldering during 10s at 4mm from Case

Value

60

15

50

- 65 to 200

- 65 to 200

230

THERMAL RESISTANCE

Symbol

R th(j-a)

Junction-ambient*

Test Conditions Value

400

Unit

°

C/W

ELECTRICAL CHARACTERISTICS

STATIC CHARACTERISTICS

Symbol

V

BR

V

F

* *

I

R

* *

T amb

= 25°C

T amb

= 25

°

C

T amb

= 25

°

C

T amb

= 25

°

C

Test Conditions

I

R

= 10

µ

A

I

F

= 1mA

I

F

= 15mA

V

R

= 50V

Min.

60

Typ.

Max.

0.41

1

0.2

Unit

V

V

µ

A

DYNAMIC CHARACTERISTICS

Symbol

C

τ

T amb

= 25°C

T amb

= 25

°

C

Test Conditions

V

R

= 0V

I

F

= 5mA f = 1MHz

Krakauer Method

Min.

Typ.

Max.

2.2

100

* On infinite heatsink with 4mm lead length

** Pulse test: t p

≤

300

µ s

δ <

2%.

Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.

Unit pF ps

October 2001 - Ed: 1B 1/3

Unit

V mA mA

°C

°

C

1N6263

Fig. 1: Forward current versus forward voltage

(typical values).

Fig. 2: Capacitance C versus reverse applied voltage V

R

(typical values).

Fig. 3: Reverse current versus ambient temperature.

Fig. 4: Reverse current versus continuous reverse voltage (typical values).

2/3

1N6263

PACKAGE MECHANICAL DATA

DO-35

C A C

/

D

/

D

B

C

D

A

B

REF.

DIMENSIONS

Millimeters

Min.

3.05

Max.

4.50

Inches

Min.

0.120

Max.

0.177

1.53

2.00

0.060

0.079

28.00

0.458

0.558

1.102

0.018

0.022

Cooling method : by convection and conduction

Marking: clear, ring at cathode end.

Weight: 0.15g

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

© 2001 STMicroelectronics - Printed in Italy - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

3/3