®
BYW100-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
1.5 A
200 V
150 °C
0.85 V
■
■
■
■
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
The specifications and curves enable the determination of trr and I
RM at 100°C under users conditions.
DESCRIPTION
Low voltage drop and rectifier suited for switching mode base drive and transistor circuits.
DO-15
BYW100-200
ABSOLUTE RATINGS (limiting values)
Symbol Parameter
V
RRM Repetitive peak reverse voltage
Value
200
Unit
V
I
FRM
80 A
Repetitive peak forward current * tp = 5µs F = 1KHz
1.5
A I
F(AV) Average forward current* Ta = 95°C
δ
= 0.5
I
FSM
50 A
Surge non repetitive forward current tp=10 ms Sinusoidal
-65 +150 °C T stg
Obsolete Product(s) - Obsolete Product(s)
Tj
Maximum operating junction temperature
+ 150 °C
T
L
230 °C
Maximum lead temperature for soldering during 10s at 4mm from case
* On infinitive heatsink with 10mm lead length
October 2001 - Ed: 4B
1/5
BYW100-200
THERMAL RESISTANCES
Symbol
R th (j-a) Junction to ambient*
* On infinite heatsink with 10mm lead length.
Parameter Value
45
Unit
°
C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
I
R
F
*
**
Parameter Tests conditions
Reverse leakage current Tj = 25°C V
R
= V
RRM
Forward voltage drop
Tj = 100°C
Tj = 25
°
C
Tj = 100°C I
I
F
F
= 4.5A
= 1.5A
Pulse test : * tp = 5 ms,
δ
< 2 %
** tp = 380
µ s,
δ
< 2 %
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I
F(AV)
+ 0.075 x I
F
2
(RMS)
Min.
Typ.
Max.
Unit
10
µ
A
0.5
mA
1.2
0.78
0.85
V
RECOVERY CHARACTERISTICS
Symbol trr tfr
V
FP
Qrr
Tests conditions
I
F
= 1A dI
F
/dt = - 50A/µs V
R
= 30V
I
F
= 1.5A dI
F
/dt = - 50A/µs
Measured at 1.1 x V
F max
Tj = 25°C
Tj = 25°C
I
F
= 1.5A dI
F
/dt = - 50A/µs Tj = 25°C
I
F
= 1.5A dI
F
/dt = - 20A/µs V
R
≤
30V Tj = 25°C
Min.
Typ.
30
5
10
Max.
35
Unit ns ns
V nC
2/5
BYW100-200
Fig. 1: Average forward power dissipation versus average forward current.
1.6
PF(av)(W)
1.4
1.2
1.0
0.8
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
0.6
0.4
T
0.2
IF(av) (A)
δ
=tp/T tp
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig. 2: Average forward current versus ambient temperature (
δ
=0.5).
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
IF(av)(A)
25
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C/W
50
Tamb(°C)
75 100 125 150
Fig. 3: Thermal resistance versus lead length.
110
100
90
80
Rth(°C/W)
70
60
50
40
30
20
10
0
5 10
Rth(j-a)
Rth(j-l)
Lleads(mm)
15 20
Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy FR4, e(Cu) = 35µm).
1.00
Zth(j-a)/Rth(j-a)
δ
= 0.5
δ
= 0.2
0.10
δ = 0.1
25
0.01
1E-2
Single pulse
1E-1 1E+0 tp(s)
1E+1 1E+2 5E+2
Fig. 5: Forward voltage drop versus forward current (maximum values).
Fig. 6: Junction capacitance versus reverse voltage applied (typical values).
C(pF)
50.00
IFM(A)
20
F=1MHz
Tj=25°C Tj=100°C
(Typical values)
10
10.00
Obsolete Product(s) - Obsolete Product(s)
5
Tj=100°C
1.00
2
VFM(V)
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
1
1
VR(V)
10 100 200
3/5
BYW100-200
Fig. 7: Reverse recovery time versus dI
150 trr(ns)
100
50
0
1
Tj=25°C
Tj=100°C dIF/dt(A/µs)
10
F
/dt.
IF=1.5A
VR=30V
90% confidence
100
Fig. 8: Peak reverse recovery current versus dI
F
/dt.
1.0
0.5
0.0
1
2.5
IRM(A)
IF=1.5A
VR=30V
90% confidence
2.0
1.5
10
Tj=100°C
Tj=25°C dIF/dt(A/µs)
100
Fig. 9: Dynamic parameters versus junction temperature.
250
%
Qrr
200
IRM
150 trr
100
25 50 75
Tj(°C)
100 125
4/5
BYW100-200
PACKAGE MECHANICAL DATA
DO-15
C A C
D
B C
D
A
B
REF.
DIMENSIONS
Millimeters
Min.
6.05
Max.
6.75
Inches
Min.
0.238
Max.
0.266
2.95
3.53
0.116
0.139
26
0.71
31
0.88
1.024
0.028
1.220
0.035
Ordering code Marking
BYW100-200 BYW100-200
BYW100-200RL BYW100-200
■
■
White band indicates cathode
Epoxy meets UL 94,V0
Package
DO-15
DO-15
Weight
0.4 g
0.4 g
Base qty Delivery mode
1000
6000
Ammopack
Tape and reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by Obsolete Product(s) - Obsolete Product(s)
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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