®
STTH152
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max) trr(max)
1.5 A
200 V
175 °C
0.75 V
32 ns
■
■
■
■
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
DO-15
STTH152
DESCRIPTION
The STTH152 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits.
The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
200 V V
RRM Repetitive peak reverse voltage
1.5
A I
F(AV) Average forward current
I
FSM Surge non repetitive forward current
TI = 115°C
δ
= 0.5
80 A tp=10 ms Sinusoidal
T stg
-65 +175 °C
Storage temperature range
175 °C Tj Obsolete Product(s) - Obsolete Product(s)
THERMAL RESISTANCES
Symbol
R th (j-a) Junction to ambient*
* On infinite heatsink with 10mm lead length.
Parameter Value
45
Unit
°
C/W
November 2001 - Ed:1A
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STTH152
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
I
R
F
*
**
Parameter Tests conditions
Reverse leakage current Tj = 25°C V
R
= V
RRM
Forward voltage drop
Tj = 125°C
Tj = 25
°
C
Tj = 125°C
I
F
= 1.5A
Pulse test : * tp = 5 ms,
δ
< 2 %
** tp = 380
µ s,
δ
< 2 %
To evaluate the maximum conduction losses use the following equation :
P = 0.60 x I
F(AV)
+ 0.10 x I
F
2
(RMS)
Min.
Typ.
Max.
Unit
1.5
µ
A
2 40
0.95
0.66
0.75
V
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol trr
V tfr
FP
Parameter Tests conditions
Reverse recovery time
I
F
= 1A dI
F
/dt = -50A/µs
V
R
= 30V
Forward recovery time
I
V
F
= 1.5A dI
FR
F
= 1.1 x V
/dt = 50A/µs
F max
Forward recovery voltage
Tj = 25°C
Tj = 25°C
Tj = 25°C
Min.
Typ.
Max.
Unit
32 ns
50
1.8
ns
V
2/5
STTH152
Fig. 1: Average forward power dissipation versus average forward current.
1.6
PF(av)(W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.2
0.4
δ
= 0.05
δ
= 0.1
δ
= 0.2
0.6
IF(av)(A)
0.8
1.0
1.2
δ
= 0.5
δ
=tp/T
1.4
δ
= 1
T
1.6
tp
1.8
Fig. 2: Average forward current versus ambient temperature (
δ
=0.5).
1.8
IF(av)(A)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C:W
Tamb(°C)
75 100 125 150 175
Fig. 3: Thermal resistance versus lead length.
Rth(°C/W)
110
100
90
80
70
60
50
40
30
20
10
0
5 10
Rth(j-a)
Rth(j-l)
Lleads(mm)
15 20 25
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration (printed circuit board epoxy FR4, LIeads = 10mm).
1.0
Zth(j-a)/Rth(j-a)
0.9
0.8
0.7
0.6
δ
= 0.5
0.5
0.4
0.3
δ
= 0.2
0.2
δ
= 0.1
0.1
Single pulse
0.0
1.E-01 1.E+00 tp(s)
1.E+01
δ
=tp/T
1.E+02
T tp
1.E+03
Fig. 5: Forward voltage drop versus forward current.
100.0
IFM(A)
Fig. 6: Junction capacitance versus reverse voltage applied (typical values).
100
C(pF)
F=1MHz
Vosc=30mV
Tj=25°C
(Maximum values)
1.0
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
1
1 10
VR(V)
100 1000
3/5
STTH152
Fig. 7: Reverse recovery time versus dI
F
/dt (90% confidence).
90 trr(ns)
80
70
60
50
40
30
20
10
0
1 10
Tj=125°C
Tj=25°C dIF/dt(A/µs)
100
IF=1.5A
VR=100V
1000
Fig. 8: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
4.0
IRM(A)
3.5
IF=1.5A
VR=100V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1 10
Tj=125°C dIF/dt(A/µs)
100
Tj=25°C
1000
2.0
1.5
1.0
25
Fig. 9: Relative variations of dynamic parameters versus junction temperature.
3.5
IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C]
IF=1.5A
dIF/dt=200A/µs
VR=100V
3.0
Qrr
2.5
50 75 100
Tj(°C)
125 trr
150
IRM
175
4/5
STTH152
PACKAGE MECHANICAL DATA
DO-15
C A C
D
B C
D
A
B
REF.
DIMENSIONS
Millimeters
Min.
6.05
Max.
6.75
Inches
Min.
0.238
Max.
0.266
2.95
3.53
0.116
0.139
26
0.71
31
0.88
1.024
0.028
1.220
0.035
Ordering code Marking
STTH152
STTH152RL
STTH152
STTH152
■
■
White band indicates cathode
Epoxy meets UL 94,V0
Package
DO-15
DO-15
Weight
0.4 g
0.4 g
Base qty Delivery mode
1000
6000
Ammopack
Tape and reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by Obsolete Product(s) - Obsolete Product(s)
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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