STMicroelectronics STTH200W04TV1 Datasheet
Annons
Annons
STTH200W04TV1
Features
■
■
■
■
■
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching and conduction losses
Insulated package:
– Electrical = 2500 V
RMS
– Capacitance = 45 pF
Description
The STTH200W04TV1, which uses ST turbo 2,
400 V technology, is especially suited for use in
DC/DC and DC/AC converters in secondary stage of MIG/MMA/TIG welding machine.
Packaged in ST’s ISOTOP, this device offers high power integration for all welding machines and industrial applications.
Turbo 2 ultrafast high voltage rectifier
Datasheet
production data
A1
A2
K1
K2
K1
K2
A2
ISOTOP
STTH200W04TV1
A1
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
T j
(max)
V
F
(typ) t rr
(typ)
Value
2 x 100 A
400 V
150 °C
1.05 V
40 ns
October 2012
This is information on a product in full production.
Doc ID 023217 Rev 2 1/8 www.st.com
8
Characteristics
1 Characteristics
STTH200W04TV1
Table 2.
Absolute ratings (limiting values, at 25 °C, unless otherwise specified, per diode)
Parameter Value Unit Symbol
V
RRM
I
F(RMS)
I
F(Peak)
I
FSM
T stg
T j
Repetitive peak reverse voltage
Forward rms current
Peak forward current,
= 0.2
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
400 V
T c
= 90 °C Per diode t p
= 10 ms sinusoidal
200
200
A
A
800 A
-65 to + 150 °C
150 °C
Table 3.
Thermal resistance
Symbol Parameter
Value
(max).
Unit
R th(j-c)
Junction to case
Per diode
Total
R th(c)
Coupling
When diodes 1 and 2 are used simultaneously:
T j
(diode 1) = P(diode 1) x R th(j-c)
(per diode) + P(diode 2) x R th(c)
0.9
0.5
0.10
°C/W
°C/W
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter Test conditions Min.
I
R
(1)
V
F
(2)
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
V
R
= V
RRM
I
F
= 100 A
I
F
= 200 A
1.
Pulse test: t p
= 5 ms,
< 2%
2.
Pulse test: t p
= 380 µs,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.95 x I
F(AV)
+ 0.0035 I
F
2
(RMS)
Typ.
40
1.05
1.35
Max.
40
400
1.55
1.30
1.9
1.65
Unit
µA
V
2/8 Doc ID 023217 Rev 2
STTH200W04TV1 Characteristics
Table 5.
Symbol
Q
RR
S factor
I
RM t rr t fr
V
FP
Dynamic electrical characteristics (per diode)
Parameter Test conditions
Reverse recovery charge
Softness factor T j
= 125 °C
Reverse recovery current
Reverse recovery time
T j
= 25 °C
Forward recovery time
Forward recovery voltage
T j
= 25 °C
I
F
= 100 A, V
R
= 320 V dI
F
/dt = -200 A/µs
I
F
= 1 A, V
R
= 30 V dI
F
/dt = -100 A/µs
I
F
= 100 A, dI
F
/dt = 100 A/µs
V
FR
= 2 V
Min.
Typ.
0.9
0.3
17
40
3.0
Max.
23
55
2
4.5
Unit
µC
A ns
µs
V
Figure 1.
Conduction losses versus average forward current (per diode)
Figure 2.
Forward voltage drop versus forward current (per diode)
200
180
160
140
120
100
80
60
40
20
0
0
PF(AV)(W)
20
δ=0.05 δ=0.1 δ=0.2
δ=0.5
I F(AV) (A)
40 60 80
δ=1
T
100
δ=tp/T
120 tp
140
1000.0
I I
F M (A )
100.0
10.0
1.0
0.1
0.0
j j
0.4
T j j
=150°C
0.8
1.2
T j
=25°C
(Maximum values)
1.6
V FM (V)
2.0
2.4
Figure 3.
Relative variation of thermal impedance junction to case versus pulse duration
Figure 4.
Peak reverse recovery current versus dI
F
/dt
(typical values, per diode)
Z t h ( j- c )
/R t h ( j - c )
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 t P (s)
1.E+01
40
I
R M
(A )
35
30
I
F
= I F(AV)
V
R
= 320 V
Tj = 125 °C
25
20
15
10
5
0
0 dI F /dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Doc ID 023217 Rev 2 3/8
Characteristics STTH200W04TV1
Figure 5.
Reverse recovery time versus dI
F
/dt (typical values, per diode)
160 t rr (n s )
140
I
F
=I
F(AV)
V
R
T j
= 320 V
=125 °C
120
100
80
60
40
20
0
0 50 100 150 200 250 300 350 dI
F
/dt(A/µs)
400 450 500
Figure 6.
Reverse recovery charges versus dI
F
/dt (typical values, per diode)
800
600
400
200
0
0
1800
Q r r
(n C )
1600
1400
I
F
= I
F(AV)
V
R
T j
= 320 V
=125 °C
1200
1000 dI
F
/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 7.
Reverse recovery softness factor versus dI
F
/dt
(typical values, per diode)
0.5
0.4
S
Factor
I
F
= I
F(AV)
V
R
T j
= 320 V
=125 °C
Figure 8.
Relative variations of dynamic parameters versus junction temperature
2.0
S
FACTOR
I
F
=I
F(AV)
VR=320 V
Reference: Tj =125°C
1.5
0.3
0.2
0.1
0.0
0 dI F /dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 9.
Transient peak forward voltage versus dI
F
/dt
(typical values, per diode)
10
V F P ( V )
I
T
F = IF(AV) j
= 125°C
8
6
4
2
0
0 dI F /dt(A/µs)
50 100 150 200 250 300 350 400 450 500
1.0
I
RM
0.5
0.0
25
Q
RR
50 75 100
Tj(°C)
125
Figure 10.
Forward recovery time versus dI
F
/dt
(typical values, per diode)
1800 t f r
(ns)
1600
1400
1200
1000
800
600
400
200
0
0 50 100
T
V
FR j
I
F
= I
F(AV)
= 2 V
=125 °C
150 200 250 300 dI F /dt(A/µs)
350 400 450 500
4/8 Doc ID 023217 Rev 2
STTH200W04TV1 Characteristics
Figure 11.
Junction capacitance versus reverse voltage applied (typical values, per diode)
C ( p F )
1000
F=1 MHz
V
OSC
=30 mV
RMS
T j
=25 °C
100
1 10
V R (V)
100 1000
Doc ID 023217 Rev 2 5/8
Package information STTH200W04TV1
●
●
●
●
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 1.5 N·m
Maximum torque value: 1.5 N·m
STMicroelectronics strongly recommend the uses of the screws delivered with this product.The use of another screw is entirely at the user’s own risk and will invalidate the warranty.
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Table 6.
ISOTOP dimensions
A
A1
D S
P1
B
F1
E
G2
E2
F
ØP
G1
E1
C
C2
G D1
Ref.
C2
D
D1
E
E1
E2
A
A1
B
C
F
F1
P
P1
S
G
G1
G2
Dimensions
Millimeters Inches
Min.
Max.
14.90
12.60
3.50
4.10
4.60
4.00
4.00
30.10
11.80
8.90
7.8
0.75
12.20
9.10
8.20
0.85
1.95
37.80
31.50
2.05
38.20
31.70
25.15
23.85
25.50
24.15
24.80 typ.
15.10
12.80
4.30
4.30
5.00
4.30
4.40
30.30
Min.
Max.
0.587
0.496
0.138
0.161
0.181
0.157
0.157
1.185
0.465
0.350
0.307
0.030
0.480
0.358
0.323
0.033
0.077
1.488
1.240
0.081
1.504
1.248
0.990
0.939
1.004
0.951
0.976 typ.
0.594
0.504
0.169
0.169
0.197
0.69
0.173
1.193
6/8 Doc ID 023217 Rev 2
STTH200W04TV1 Ordering information
Table 7.
Ordering information
Order code Marking Package Weight Base qty
(1)
Delivery mode
STTH200W04TV1 STTH200W04TV1 ISOTOP
27 g without screws
10 with screws
Tube
1.
This product is supplied with 40 terminal screws and washers for each tube. The screws and washers are supplied in a separate pack with the order.
Table 8.
Date
Document revision history
Revision
19-Jun-2012
02-Oct-2012
1
2
Changes
First issue.
Updated
Doc ID 023217 Rev 2 7/8
STTH200W04TV1
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
8/8 Doc ID 023217 Rev 2
Ladda ner
Annons