®
BUL216
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
HIGH OPERATING JUNCTION
TEMPERATURE
HIGH RUGGEDNESS
APPLICATIONS
■
ELECTRONIC BALLASTS FOR
■
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL216 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P tot
T stg
T j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t p
< 5 ms)
Base Current
Base Peak Current (t p
< 5 ms)
Total Dissipation at T c
= 25 o
C
Storage Temperature
Max. Operating Junction Temperature
June 2001
Value
1600
800
9
4
6
2
4
90
-65 to 150
150
Unit
V
A
V
V
A
A
A
W o
C o
C
1/6
BUL216
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.39
62.5
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1600 V
V
CE
= 1600 V T j
= 125 o
C
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
V
C
CE
= 800 V
= 100 mA L = 25 mH
V
EBO
Emitter-Base Voltage
(I
C
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
V
BE(sat)
∗
Base-Emitter
Saturation Voltage h
FE
∗
DC Current Gain
I
I
I
I
I
E
C
= 10 mA
= 1 A I
C
= 2 A I
C
= 1 A I
C
= 2 A I
B
B
B
B
= 0.2 A
= 0.66 A
= 0.2 A
= 0.66 A
I
C
= 0.4 A V
CE
= 5 V
I
C
= 10 mA V
CE
= 5 V t t s f
INDUCTIVE LOAD
Storage Time
Fall Time
I
V
V
C
= 1.5 A I
B1
= 0.5 A
BE(o ff)
CL
= -5 V R
BB
= 0
Ω
= 250 V L = 200
µ
H t t s f
INDUCTIVE LOAD
Storage Time
Fall Time
I
V
V
T
C
= 1.5 A I
BE(o ff)
CL
= -5 V R
BB
= 0
Ω
= 250 V L = 200
µ
H o
B1
= 0.5 A j
= 100 C
∗
Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
800
9
12
10
Typ.
2.1
450
3
600
Max.
100
500
250
Unit
µ
A
µ
A
µ
A
1
3
1.2
1.2
40
3.3
720 o
C/W o
C/W
V
V
V
V
V
V
µ s ns
µ s ns
Safe Operating Areas Derating Curve
2/6
DC Current Gain DC Current Gain
BUL216
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
Inductive Fall Time Inductive Storage Time
3/6
BUL216
Inductive Fall Time Inductive Storage Time
Reverse Biased SOA RBSOA and Inductive Load Switching Test
Circuits
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
DIM.
H2
L2
L4
L5
L6
L7
L9
M
DIA.
A
C
D
E
F
F1
F2
G
G1
BUL216
TO-220 MECHANICAL DATA
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
mm
TYP.
10.00
16.40
13.00
2.65
15.25
6.20
3.50
2.60
3.75
14.00
2.95
15.75
6.60
3.93
3.85
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.511
0.104
0.600
0.244
0.137
0.147
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
inch
TYP.
MAX.
0.181
0.052
0.107
0.027
0.034
0.067
0.067
0.202
0.106
0.409
0.645
0.551
0.116
0.620
0.260
0.154
0.102
0.151
P011CI
5/6
BUL216
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
6/6
